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5. Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications

Author

Jeffrey W. Teng, Delgermaa Nergui, George N. Tzintzarov, Brett L. Ringel, Zachary R. Brumbach, Justin P. Heimerl, Yaw A. Mensah, Jackson P. Moody, Dennis O. Thorbourn, Linda Del Castillo, Mohammad M. Mojarradi, Benjamin J. Blalock, and John D. Cressler

Subjects
Nuclear and High Energy Physics, Nuclear Energy and Engineering, Electrical and Electronic Engineering
Published
2023
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6. Variability of p-n Junctions and SiGe HBTs at Cryogenic Temperatures

Author

Hanbin Ying, Uppili S. Raghunathan, Jackson P. Moody, John D. Cressler, and Jeffrey W. Teng

Subjects
010302 applied physics, Mitigation methods, Materials science, business.industry, Bipolar junction transistor, Doping, Heterojunction, Cryogenics, 01 natural sciences, Electronic, Optical and Magnetic Materials, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, chemistry, 0103 physical sciences, Optoelectronics, Electrical and Electronic Engineering, business, Quantum tunnelling
Abstract

This investigation examines the physical mechanisms that can increase the variability of both p-n junctions and silicon–germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative mechanisms responsible for device parameter variability include bandgap narrowing due to heavy doping, mechanical stress, and the Ge profile. The impact of direct tunneling on cryogenic parameter variability in SiGe HBTs is also examined. Measurement results are compared with TCAD simulations to provide additional insights, and possible mitigation methods are discussed.

Published
2021
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