124 results on '"Jacobs, Alan G"'
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2. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
3. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
4. Using machine learning with optical profilometry for GaN wafer screening
5. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
6. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
7. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
8. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
9. Process Optimization for Selective Area Doping of GaN by Ion Implantation
10. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
11. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
12. Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN.
13. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
14. Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
15. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
16. (Invited) NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV
17. 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C
18. NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV
19. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
20. Conformal coating of macroscopic nanoparticle compacts with ZnO via atomic layer deposition.
21. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
22. Effect of GaN/AlGaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
23. Novel Co‐doping Moiety to Achieve Enhanced P‐type doping in GaN by Ion Implantation
24. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
25. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
26. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
27. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
28. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
29. NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV.
30. 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C
31. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
32. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
33. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
34. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
35. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
36. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
37. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility.
38. Using Wafer Scale Optical Profilometry to Estimate the Failure Rate of Vertical Pin GaN Diodes
39. (Invited) Understanding the Electroluminescence Signature of High-Voltage Vertical GaN Pin Diodes with Different Edge Termination Designs
40. (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
41. Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
42. Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface.
43. (Electronics and Photonics Division Poster Award Winner) Operation up to 225°C of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers.
44. Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry
45. Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates
46. A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
47. Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
48. Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation
49. Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers
50. (Invited) Ion Implantation and Activation of n- and p-Type Dopants in GaN
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