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Many research groups both in academia and in industry are currently developing innovative nanoscale devices which could have a tremendous impact in the general areas of photonics and electronics. However techniques for fabricating these devices and nanostructures must be available in the form of production tools in order to find real applications. There are currently two major approaches under study as fabrication methods for nanodevices: these are microfabrication based techniques and molecular assembly techniques. The microfabrication approach, which is to be discussed here, is strongly based on the technology developed over the past decades for the fabrication of electronic devices and integrated circuits. The continued miniaturisation of these devices has far surpassed expectations for a technology developed initially for micrometer sized structures, and this approach now encompasses the fabrication of devices with dimensions well below 100 nm, even in production environments. There are also methods under study which do not yet meet industry standards in terms of, for example, throughput and repeatability, but which have shown significant promise. These include new techniques such as nano-imprint lithography, as well as established research tools such as electron beam lithography, which are becoming more and more relevant as equipment manufacturers such as Canon are now developing new types of production level tools.

Background: Previous research on hemispatial neglect has provided evidence for dissociable mechanisms for egocentric and allocentric processing. Although a few studies have examined whether tDCS to posterior parietal cortex can be beneficial for attentional processing in neurologically intact individuals, none have examined the potential effect of tDCS on allocentric and/or egocentric processing. Objective/hypothesis: Our objective was to examine whether transcranial direct current stimulation (tDCS), a noninvasive brain stimulation technique that can increase (anodal) or decrease (cathodal) cortical activity, can affect visuospatial processing in an allocentric and/or egocentric frame of reference. Methods: We tested healthy individuals on a target detection task in which the target – a circle with a gap – was either to the right or left of the viewer (egocentric), or contained a gap on the right or left side of the circle (allocentric). Individuals performed the task before, during, and after tDCS to the posterior parietal cortex in one of three stimulation conditions – right anodal/left cathodal, right cathodal/left anodal, and sham. Results: We found an allocentric hemispatial effect both during and after tDCS, such that right anodal/left cathodal tDCS resulted in faster reaction times for detecting stimuli with left-sided gaps compared to right-sided gaps. Conclusions: Our study suggests that right anodal/left cathodal tDCS has a facilitatory effect on allocentric visuospatial processing, and might be useful as a therapeutic technique for individuals suffering from allocentric neglect.

pH was used as the main driving parameter for specifically immobilizing silicon nanowires onto Si3N4 microsquares at the surface of a SiO2 substrate. Different pH values of the coating aqueous solution enabled to experimentally distribute nanowires between silicon nitride and silicon dioxide: at pH 3 nanowires were mainly anchored on Si3N4; they were evenly distributed between SiO2 and Si3N4 at pH 2.8; and they were mainly anchored on SiO2 at pH 2. A theoretical model based on DLVO theory and surface protonation/deprotonation equilibria was used to study how, in adequate pH conditions, Si nanowires could be anchored onto specific regions of a patterned Si3N4/SiO2 surface. Instead of using capillary forces, or hydrophilic/hydrophobic contrast between the two types of materials, the specificity of immobilization could rely on surface electric charge contrasts between Si3N4 and SiO2. This simple and generic method could be used for addressing a large diversity of nano-objects onto patterned substrates.

Integration in a single chip using localized optical phenomena is one of the possible approaches to attain the accuracy, portability and affordability required for future biosensing devices. We address this problem by investigating a grating-coupled quantum well (QW) surface plasmon resonance (SPR) device that comprises a monolithically integrated source of light and a bio-sensitive surface. The successful operation of such a device requires, in addition to the optimization of its architecture, the use of high quality thin films with smooth surface morphology. Here, we present the results of studying a variety of dielectric and Au films intended for the fabrication of QW-SPR devices. For dielectrics, we found that SiO"2 films obtained by plasma-enhanced chemical vapor deposition have the best surface morphology and optical properties appropriate for our device. The films of Au fabricated with deposition rates exceeding 0.3nm/s exhibited relatively smooth surface morphology, however the presence of surface micro-inclusions reduced the attractiveness of such films. To avoid sample overheating that occurs at extremely slow deposition rates, we optimized the fabrication of Au films at 0.05 and 0.2nm/s.

Single-electron transistor (SET) circuits can be stacked above the CMOS platform to achieve functional and heterogeneous 3-D integration of nanoelectronic devices. For SET-CMOS hybridization, CMOS technology is essential for I/O, signal restoration, and maintaining compatibility with established technology. In spite of the SET's unparalleled advantages, its low current drive and output voltage when driving CMOS logic makes its use questionable in commercial ICs, specifically at the SET-CMOS interface. In this paper, we contribute to the design, analysis, and simulation of hybrid SET-CMOS circuits exploiting room-temperature operating SET technology. We developed an efficient computer-aided design tool to simulate large-scale SET and hybrid SET-CMOS circuits with conventional device elements. To demonstrate the SET logic driving capability for CMOS with interconnect parasitics, we analytically derived the SET logic parameters for the 22-nm technology node and used them to simulate hybrid SET-CMOS logic. We studied the performance of such hybrid logic circuit in terms of delay and bandwidth and addressed the tradeoffs between fabrication and electrical parameters. Our simulation results demonstrate the SET logic driving capability for CMOS comparable output voltage at gigahertz frequency in a hybrid SET-CMOS architecture. Finally, a comparison between SET and CMOS logic demonstrates that the SET logic outperforms CMOS.

Electron beam lithography in silicon dioxide has been investigated with energies ranging from 0.5 up to 6 keV. The etch ratio of SiO2 has been studied and interpreted with regard to the limited penetration of electrons at such low energies. Monte Carlo simulations have been carried out to investigate the depth of penetration and the density of energy absorbed by SiO2. The etch ratio is also shown to depend on the dilution of the developer (a buffered hydrofluoric acid diluted in water). Finally, a possible application of low energy direct writing in silicon dioxide is described for the control of damascene processes, enabling the fabrication of nanodevices embedded in an insulator.

Single-electron transistor drain current is studied as a function of the temperature. A current conduction model based on the physical properties of the tunnel junctions is proposed to explain the discrepancies observed at high temperature between the experimental data and Monte Carlo simulations. The extension of the model includes a thermionic and a field assisted emission component. A demonstration of this approach is presented for a metallic single-electron transistor characterized up to 430 K.

Surfaces featuring nano-structures and biochemical patterns are increasingly developed as novel and superior substrates for biosensors and assays. Metallic periodic nano-structures have been studied for their unique optical properties and in particular their ability to support surface plasmon waves. Here we present a new nano-structuring approach based on gentle metal lift-off process coupled with self-assembled surface chemistry for the fabrication of a zeroth-order 400 nm period metallic grating with differentiated surface chemistries on the mesas and troughs. The approach, using terminated self-assembled monolayers, creates versatile functionalized substrates allowing the precise deposition of complex biomolecular structures. We use this technique to perform the guided deposition of a three-dimensional polyelectrolyte multilayer structure and the patterned adsorption of quantum dots. Finally, we demonstrate that scanning near-field optical microscopy, used in conjuncture with atomic force microscopy and scanning electron microscopy, is an ideal tool for the characterization of this nano-structured surface as it provides a complete chemical, topographical and optical image of the surface. This ability to pattern and locally measure the surface properties is likely to have an important impact on the design of novel and optimized biointerfaces and transducers for biosensors.

A process design based on a nanowire structure is demonstrated with the fabrication of metallic single-electron transistors. The method is capable of subattofarad resolution resulting in transistors that exhibited Coulomb blockade up to approximately 430 K. An analysis showed that these devices have sufficient operational margin to sustain process fluctuations and still operate within the temperature limits of conventional silicon field effect transistors.

The effects of various pulse reversal plating parameters on the grain size and smoothness of Ni film on silver seed layers has been studied. The duty cycle, frequency, bath temperature and agitation methods have been tested. The objective was to form a thin continuous hard etch mask (20–30 nm of thickness) of Ni films for image reversal of thin film resist using electroplating. While nickel sulfamate solution without additives or brighteners has been used to plate Ni films, reactive ion etching (RIE) has been used to test the durability of the plated Ni films in fluorine plasma. It was found that pulse reversal plating with current intensity of 12 mA/cm 2 , duty cycle of 90%, bath temperature of 45 °C, ultrasonic agitation of power 80 W, and 400 kHz wave frequency resulted in a plating rate as low as 0.2 nm/s. This plating rate made the control of the film thickness an easy task to achieve. This yielded to a smooth plated surface free from defects or voids, with 25 nm film thickness. Combining electron beam lithography with pulse reversal plating for image reversal and RIE offers the prospect of patterning patterns with the desired aspect ratio. Holes of 100 nm diameter, 250 nm period, and 300 nm depth are achieved using this process.

Compact and portable surface plasmon resonance (SPR) biosensors of high sensitivities can be made through integration of discrete components in a single device. We report on a device comprising a vertical cavity light emitting diode (VLED) integrated with gold-based biosensing nanostructures fabricated atop its surface. Coupling of surface plasmon waves was achieved by the introduction of a spacer SiO2 layer located between the light source and the functionalized Au thin film. The SPR signal was extracted in far field with a Au-based nanograting and detected using a custom designed hyperspectral imager. We discuss the performance of a VLED-based SPR device employed for detection of different concentration saltwater solutions.

Measurements of stress induced by TiOx layers on single quantum well InP based heterostructure are presented. Strain characterization has been performed by photoluminescence (PL) and micro-Raman spectroscopy. We present a comparison of the stress induced by TiOx and SiO2 layers which are commonly used as masking material for the quantum well intermixing process. Micro-Raman spectroscopy and PL revealed that TiO2 is creating a stress field in the top layers of the heterostructure, with a dependence on temperature and stressor thickness. A hysteresis phenomenon of the Raman shift has also been observed after measurements at low temperature (below 300 K) which shows that the stress created by TiOx exceeds the elastic limit of InP. On the other hand, there is no evidence that SiO2 is inducing stress. Rapid thermal annealing of samples covered with titanium oxide results in improvement of the thermal stability.

A new strategy to prepare and precisely assemble small gold nanoparticles in true one-dimensional lines is reported. This template-free technique allows one to control the nanoparticle size and interparticle distances, while precisely positioning the large scale 1-D assemblies on the surface.

We report the coherent generation and detection of terahertz radiation from antenna-type devices made by using proton-bombarded GaAs photoconductive materials. Our combined emitter/detector set-up allows us to obtain a large bandwidth going from 0.1 up to 2 THz. We compare the performance of antenna emitters fabricated using mono- and multi-energy proton implantation in semi-insulating GaAs. Improved emission of terahertz radiation with a comparable bandwidth has been obtained using multi-energy proton implantation. Our results show that creating more defects in the optical absorption region gives rise to higher damage threshold biasing and larger saturation optical pumping power levels.

The continuous synthesis of fullerenes and carbon nanotubes (CNTs) in induction plasmas at the 40-kW plate power level has been studied. Kinetics calculations were conducted to predict the conditio...

Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the As outgassing mechanism and the disordering effects induced by ion implantation in Zn-doped GaAs with nominal doping level p=7×1018cm−3. The relative intensity of these two peaks is measured right after rapid vacuum thermal annealings (RVTA) between 200 and 450°C, or after ion implantations carried out at energies of 40keV with P+, and at 90 and 170keV with As+. These intensities provide information regarding the Schottky barrier formation near the sample surface. Namely, the Raman signature of the depletion layer formation resulting from As desorption is clearly observed in samples submitted to RVTA above 300°C, and the depletion layer depths measured in ion implanted GaAs:Zn are consistent with the damage profiles obtained through Monte Carlo simulations. Ion channeling effects, maximized for a tilt angle set to 45° during implantation, are also investigated. These results show that the Raman spe...

The present paper reports on the demonstration of wide optical bandwidth electro-absorption waveguide modulator arrays fabricated on a single InGaAs/InGaAsP wafer chip using a gray-mask-based quantum well intermixing. Both micro-Raman and photoluminescence measurements have shown that the quality of the material concerning is maintained after the ion implantation-induced process. Multiple energy bandgap sections for absorbing at different wavelengths with a large modulation depth have been achieved in modulator arrays, with around 60 nm as the modulating bandwidth. An intensity modulation depth of about −16 dB has been obtained at −5 V bias for these modulator arrays.

The interdiffusion effect on the strain build-up and refractive index profile of lattice-matched InGaAs/InGaAsP multiple quantum wells is reported. Interdiffusion is achieved experimentally using low energy (360 keV) arsenic or phosphorus ion-implantation-induced disordering, followed by an annealing step. A model of the interdiffusion process has been developed to analyse the effect of different interdiffusion ratios on the waveguide's polarisation behaviour through the strain build-up and the refractive index profiles for the transverse electric and transverse magnetic modes. Polarisation-resolved photocurrent absorption measurements of quantum-well waveguide structures have shown that sufficiently high ion implantation doses can lead to the realisation of polarisation-insensitive waveguides at 1.55 /spl mu/m wavelength operation. Comparison with the modelling results shows that the polarisation-dependent behaviour of the waveguides is best described by a higher interdiffusion ratio for the group V than for the group III atoms.

In this paper, we present the attractive characteristics of low-energy ion-implantation-induced quantum-well intermixing of InP-based heterostructures. We demonstrate that this method can fulfil a list of requirements related to the fabrication of complex optoelectronic devices with a spatial control of the bandgap profile. First, we have fabricated high-quality discrete blueshifted laser diodes to verify the capability of low-energy ion implantation for the controlled modification of bandgap profiles in the absence of thermal shift. Based on this result, intracavity electroabsorption modulators monolithically integrated with laser devices were fabricated, for the first time, using this postgrowth technique. We have also fabricated monolithic six-channel multiple-wavelength laser diode chips using a novel one-step ion implantation masking process. Finally, we also present the results obtained with very low-energy (below 20 keV) ion implantation for the development of one-dimensional and zero-dimensional quantum confined structures.

In order to meet the long term goals of the International Technology Roadmap for Semiconductors, it is important to demonstrate that X-ray masks can be fabricated at resolutions well below the 100 nm barrier. This paper presents results on the use of conventional electron-sensitive resists and the silicide direct write electron beam lithography process (SiDWEL) for the fabrication of X-ray masks with sub-100 nm resolution. By optimizing the deposition of the thin films using conventional evaporators, the SiDWEL process was able to achieve linewidths of less than 40 nm and line spacing of less than 100 nm. The silicide patterns formed by the SiDWEL process are sufficiently resistant to plasma etching to directly transfer the patterns to the tantalum absorber. To improve the turnover time for mask fabrication, different writing schemes were studied, including combining the SiDWEL process with QSR-4, a novel negative resist designed specifically for this application. [DOI: 10.1143/JJAP.41.4122]

We report a technique for generation of multiple energy bandgaps using a combination of one-step gray mask lithography and low-energy arsenic ion implantation induced disordering. Using this technique, we have successfully integrated 12-section with variable energy bandgaps on a single InGaAs/InGaAsP laser heterostructure. When compared to conventional processes, this novel technique is simple, promising and cost effective.

To overcome the limitation of resists in electron beam lithography, a resistless electron beam lithography technique was recently developed. In the silicide direct-write electron-beam lithography process (SiDWEL), a thin metallic film is deposited on a silicon surface. A low-energy (

A single-electron transistor operating at room temperature was successfully fabricated by an improved nanodamascene process. It consists in a gated titanium nanowire interspersed by two very closely spaced tunnel junctions constituting a Coulomb island. The improvement in the process concerns the presence of an individual control gate close to the island, paving the way toward the fabrication of single-electron circuits. Moreover, a final oxidizing plasma treatment was used to tune the tunnel junction capacitances and, thus, the device operating temperature. As expected, electrical characteristics showed Coulomb blockade at room temperature, with an unexpectedly high on-state current.

We report the fabrication of GaAs/AlGaAs quantum well wires using implantation of As at 45 keV to induce quantum well intermixing. The intermixing process was first characterized giving optimized annealing parameters of 875 °C for 30 s and an implantation dose of 1×1013 cm−2. Wire widths from 35 to 1000 nm were defined using e-beam lithography followed by lift-off. Photoluminescence spectra from the lateral wells and barriers were observed from samples with wires as narrow as 50 nm. The energies of the lateral wells were found to remain constant for wire widths between 1000 and 150 nm, and start to shift significantly towards high energy for 80 nm wires, the signal from the lateral well eventually merging with that from the lateral barrier for 35 nm wires. An intermixing radius of about 17 nm was estimated for the process. Photoreflectance measurements were also carried out on these wire samples, showing that the wires appear to have a parabolic lateral potential and clear interwire coupling was observed from samples with barriers narrower than 50 nm.

Far-infrared transmission measurements have been performed on a two-dimensional electron gas (2DEG) with a lateral modulation of its concentration induced using an electrostatic gating technique. A strong coupling of the plasmon with the cyclotron resonance harmonics (of index up to n=5), known as Bernstein modes, is observed when the photon energy is close to the plasmon energy of the modulated 2DEG. The behavior of these modes is studied as a function of magnetic field and modulation strength for λ=163 and 229 μm. A classical theory based on the Boltzmann kinetic equation [A. V. Chaplik and D. Heitmann, J. Phys. C 18, 3357 (1985)] gives a good account of the main experimental features.

We report far-infrared transmission measurements performed on a two-dimensional electron gas (2DEG) with a lateral modulation of its concentration induced using a split-gate technique. Under magnetic field, when the photon energy is close to the plasmon energy of the modulated 2DEG, a strong coupling of the plasmon with the cyclotron resonance harmonics (up to n = 5), known as Bernstein modes, is observed. At a fixed wavelength of , the behaviour of these modes is studied as a function of magnetic field while the modulation strength is varied in the quasi-two-dimensional regime by changing the gate voltage. Experimental data are compared with a classical theory based on the Boltzmann kinetic equation [A V Chaplik and D Heitmann 1985 J. Phys. C: Solid State Phys. 18 3357].

Blueshifted InGaAsP-InGaAs-InP laser diodes have been fabricated using a technique that includes a low-energy ion implantation, used to generate point defects near the surface of the structure, followed by a thermal anneal which causes the diffusion of these defects through the quantum wells (QWs). This diffusion of point defects induces a local intermixing of atoms in the QWs and barriers, which results in a decrease in the emission wavelength of the devices. Results obtained with strained and lattice-matched QW structures are compared. For lattice-matched structures, electroluminescence wavelength shifts as large as 76 nm were obtained. Strained QW structures presented a much smaller blueshift (/spl ap/10 nm). In both cases, we observed no significant change of the threshold current caused by the intermixing process.

This paper presents a comparative study of a one-bit-full-adder cell based on metallic complementary capacitively coupled single-electron transistors with its 22 nm CMOS counterpart. Performance and energy efficiency are investigated. The CMOS-like single-electron transistor based full adder is used in two operating mode, hysteresis and non-hysteresis. Parallel and serial single electron transistors designs are introduced. The single electron inverter consumes less than 90.4 pW while it dissipates 4.21 nW in CMOS technology.

This paper presents an overview of the functioning principles of CNTs and their electrical and mechanical properties when used as strain sensors and describes a system embodiment for a wearable monitoring and biofeedback platform for use in pressure ulcer prevention and rehabilitation. Two type of CNTs films (multi-layered CNTs film vs purified film) were characterized electrically and mechanically for potential use as source material. The loosely woven CNTs film (multi-layered) showed substantial less sensitivity than the purified CNTs film but had an almost linear response to stress and better mechanical properties. CNTs have the potential to achieve a much higher sensitivity to strain than other piezore-sistors based on regular of conductive particles such as commercially available resistive inks and could become an innovative source material for wearable strain sensors. We are currently continuing the characterization of CNTs based strain sensors and exploring their use in a design for 3-axis strain sensors.

Quantum well (QW) intermixing has been performed using low-energy broad-area ion implantation to increase the bandgap energy in a spatially selective manner. There is a maximum single dose beyond which further intermixing of the QWS is impeded by damage to the semiconductor surface. We demonstrate that this problem can be overcome by using a series of implants and rapid thermal anneals, with each rapid thermal anneal repairing the crystal surface. Using this technique we have observed shifts in optical bandgap for multiple implants greater than 2.5 times that observed for a single implant.

Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of −15 dB has been measured from these devices with a voltage swing of −4.5 V.

We report the fabrication of multiple wavelength chips in InGaAs-InGaAsP laser structure using a novel ion implantation induced quantum-well (QW) intermixing technique. This technique first consists of using a gray mask photolithography and reactive ion etching process to create a SiO/sub 2/ implant mask with variable thickness on the sample. This is followed by a single 360-keV phosphorus ion implantation at a dose of 1/spl times/10/sup 14/ cm/sup -2/ at 200/spl deg/C, which creates different amounts of point defects in the sample depending on the local thickness of the SiO/sub 2/ mask. A subsequent thermal annealing step induces QW intermixing through the diffusion of the point defects across the structure. With this technique, we have successfully fabricated 10-channel multiple wavelength laser diodes, with lasing wavelength spreading over 85 nm (between 1.47 and 1.55 /spl mu/m), monolithically integrated on a single chip. Only a limited increase of threshold current density of 17% (i.e., from 1.2 to 1.4 kA/cm/sup 2/), has been observed between the least intermixed and the most intermixed lasers.

We present the results of far field measurements of the complete 3D dispersion relation of a surface plasmon resonance (SPR) effect induced by an integrated quantum well nanodevice. The light modulations in the far field, where the surface plasmons are extracted by a grating, has been calculated for a continuum of energies and wavevectors injected by the luminescent substrate. We introduce a novel experimental method for direct mapping of the EM wave dispersion that enables the monitoring of massive amounts of light-scattering related information. The quasi-real time method is applied for tracking, in the E(k) space, the SPR peak surfaces generated by the investigated nanodevice. Those additional dimensions, measured with scalable tracking precision, reveal anisotropic surficial interactions and provide spectroscopic response for SPR.

In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP–InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

A surface plasmon resonance (SPR) scheme is proposed in which the local phase modulations of the coupled plasmons can interfere and yield phase-sensitive intensity modulations in the measured signal. The result is an increased traceability of the SPR shifts for biosensing applications. The main system limitation is the propagation distance of the coupled plasmon modes. This aspect is therefore studied for thin film microstructures operating in the visible and near-infrared spectral regions. The surface roughness of the substrate layer is examined for different dielectrics and deposition methods. The Au layer, on which the plasmonic modes are propagating and the biosensing occurs, is also examined. The surface roughness and dielectric values for various deposition rates of very thin Au films are measured. We also investigate an interferometric SPR setup where, due to the power flux transfer between plasmon modes, the specific choice of grating coupler can either decrease or increase the plasmon propagation length.

A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage. Experimental results demonstrated that these methods are effective in significantly reducing the problems associated with charging. They indicate that charging on a sample is a function of time interval and proximity between line structures. In addition, the optimum time and distance between exposures for no charge-induced pattern distortion were determined. By using the crossover voltage of the material for lithography, charging effect can be significantly minimized.

We demonstrate in this work the targeted immobilisation of quantum dots on the mesas of a gold lamellar nanograting. Rigorous coupled wave analysis simulations show that such immobilisation can lead to a significant increase in surface plasmon resonance response.

Weight bearing is an important clinical variable for rehabilitation specialists. The objectives of this proof of concept study were to design and build a wireless system for weight bearing measurement that would provide accurate dynamic and static measurements of plantar forces from multiple sites. The proposed system consists of two shoes instrumented with miniature load cells connected to ankle modules for wireless communication to a computer and signal conditioning. Force plates were used as the gold standard to evaluate the accuracy of the proposed system during quiet standing, walking and weight-shifting tasks in 30 young subjects. The performance of the system was characterized for each task using the following variables: percentage of body weight (PBW), heel-strike (HS) peak force value, stance time (ST), double support time (DST), excursion of center of pressure (COP) in the anteroposterior axis (ACOPx). For the measurement of the PBW, the standard deviation of errors in comparison to data obtained from forces plates during quiet-standing and weight-shifting activities was between 3.96% and 5.13%. With respect to gait parameters, the standard deviation of errors for the measurement of the peak forces during walking was between 6.10% and 8.82% for both shoes, and errors on timing variables during gait cycles were small (less than 18 msec for one standard deviation). For the ACOPx during a front weight-shifting trial, the standard deviation of errors was 19.20% for the right foot. The accuracy of the proposed system offers acceptable performances in the context of its proposed clinical applications. The envisioned embodiment and use of the system are instrumented shoes individually calibrated to assess in combination with real time video from videoconferencing codecs weight bearing capabilities in the context of telerehabilitation care. Work on the integration of the system with a clinical system for telerehabilitation is on-going.