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1. SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

2. On Stress-Induced Polarization Effect in Ammonothermally Grown GaN Crystals

3. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

5. Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

7. Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

8. Surface-enhanced Raman scattering used to study the structure of layers formed on metal surfaces from single-stranded DNA and 6-mercaptohexan-1-ol: influence of hybridization with the complementary DNA and influence of the metal substrate

9. Fundamental Studies on Crystallization and Reaching the Equilibrium Shape in Basic Ammonothermal Method: Growth on a Native Lenticular Seed

10. New strategy for the gene mutation identification using surface enhanced Raman spectroscopy (SERS)

11. Nanostructured GaN sensors for Surface Enhanced Raman Spectroscopy

12. Evaluation of selected SERS substrates for trace detection of explosive materials using portable Raman systems

13. Role of dislocations in nitride laser diodes with different indium content

14. Enhanced Raman spectra of black dye N719 on GaN nanowires

15. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

16. The importance of structural inhomogeneity in GaN thin films

17. Impact of temperature-induced coalescence on SERS properties of Au nanoparticles deposited on GaN nano-columns

18. Charge-Transfer Mapping of Nanostructured GaN/Ag Surfaces using Surface Enhanced Raman Spectroscopy

19. Detection of Hepatitis B virus antigen from human blood: SERS immunoassay in a microfluidic system

20. Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

21. Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed

22. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

23. Synchrotron radiation X-ray topography and defect selective etching analysis of threading dislocations in halide vapor phase epitaxy GaN crystal grown on ammonothermal seed

24. Compound Semiconductors: Characterization by Chemical Etching

25. Defect sensitive etching of nitrides: appraisal of methods

26. Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE

27. The nucleation of HCl and Cl 2 ‐based HVPE GaN on mis‐oriented sapphire substrates

28. A Spectrum Image Cathodoluminescence Study of Dislocations in Si-Doped Liquid-Encapsulated Czochralski GaAs Crystals

29. Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism

30. Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers

31. Thick GaN layers grown by HVPE: Influence of the templates

32. Photoelectrochemistry and Etching of SiC: a Comparison with Si

33. The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy

34. Growth of Fe doped semi‐insulating GaN on sapphire and 4H‐SiC by MOCVD

35. Etching, Raman and PL study of thick HVPE-grown GaN

36. Defect-selective etching of SiC

37. Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD

38. Revealing of defects in CdTe crystals by DSL etching

39. Defects in GaN single crystals and homoepitaxial structures

40. Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy

41. Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE

42. Defect-selective etching of GaN in a modified molten bases system

43. Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

44. Complementary study of defects in GaN by photo-etching and TEM

45. Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted

46. Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

47. Electrochemical etching of highly conductive GaN single crystals

48. Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

49. On the absence of decoration As precipitates at dislocations in Te-doped GaAs

50. Recent advances in defect-selective etching of GaN

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