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We explore possibilities for control of magnons in two-dimensional heterostructures by an external electric field acting across a dielectric barrier. By performing ab initio calculations for a Fe monolayer and Fe bilayer, both suspended in vacuum and deposited on Cu(001), we demonstrate that external electric field can significantly modify magnon lifetimes and that these changes can be related to field-induced changes in layer-resolved Bloch spectral functions. For systems with more magnon dispersion branches, the gap between high- and low-energy eigenmodes varies with the external field. These effects are strongly influenced by the substrate. Considerable variability in how the magnon spectra are sensitive to the external electric field can be expected, depending on the substrate and on the thickness of the magnetic layer.

We report synthesis of single crystalline NaMnAs, confirm its antiferromagnetic order and characterise the sample by photoemission spectroscopy. The electronic structure was studied using optical transmittance, x-ray and ultraviolet spectroscopy and by theoretical modeling using local density approximation (LDA) extended to LDA+U when Heisenberg model parameters were determined. Optical transmittance measurement have confirmed the theoretical predictions that NaMnAs is a semiconductor. Also the N\'eel temperature was closer determined for the first time from temperature dependence of magnetization, in agreement with our Monte Carlo simulations., Comment: 11 pages, 11 figures

Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\bar{\Gamma}$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model., Comment: 15 pages, 9 figures

Grimm-Sommerfeld analogous II-IV-N-2 nitrides such as ZnSiN2, ZnGeN2, and MgGeN2 are promising semiconductor materials for substitution of commonly used (Al,Ga,In)N. Herein, the ammonothermal synthesis of solid solutions of II-IV-N-2 compounds (II=Mg, Mn, Zn; IV=Si, Ge) having the general formula ((II1-xIIxb)-I-a)-IV-N-2 with x approximate to 0.5 and ab initio DFT calculations of their electronic and optical properties are presented. The ammonothermal reactions were conducted in custom-built, high-temperature, high-pressure autoclaves by using the corresponding elements as starting materials. NaNH2 and KNH2 act as ammonobasic mineralizers that increase the solubility of the reactants in supercritical ammonia. Temperatures between 870 and 1070 K and pressures up to 200 MPa were chosen as reaction conditions. All solid solutions crystallize in wurtzite-type superstructures with space group Pna2(1) (no. 33), confirmed by powder XRD. The chemical compositions were analyzed by energy-dispersive X-ray spectroscopy. Diffuse reflectance spectroscopy was used for estimation of optical bandgaps of all compounds, which ranged from 2.6 to 3.5 eV (Ge compounds) and from 3.6 to 4.4 eV (Si compounds), and thus demonstrated bandgap tunability between the respective boundary phases. Experimental findings were corroborated by DFT calculations of the electronic structure of pseudorelaxed mixed-occupancy structures by using the KKR+CPA approach.

Recently, a number of different structurally related nitrides characterized by pairs of edge-sharing Si-N tetrahedra forming [Si2N6](10-) units have emerged via different synthesis methods. Concurrently, upon doping with rare earth elements (e.g. Eu2+ and Ce3+), numerous applications in the field of luminescent materials were revealed, ranging from the visible spectrum to the near IR. This compound class in turn emphasizes the extraordinary large tuning range with respect to relative composition by formal cation exchange. In this contribution, we study the dynamical stabilities of the existing Si-based nitridotetrelates and hypothetical Ge analogues promising for future synthesis efforts of luminescent materials by means of extensive phonon calculations. Further calculations of electronic and mechanical properties corroborate the fundamental suitability of the predicted compounds for the applications of potential luminescent materials with regard to band gap (E-g) and Debye temperature (Theta(D)). Calculated enthalpies of the reaction provide further beneficial insights for future experimental attempts. Our study hence highlights a potential range of novel stable nitridogermanates with isotypic structures and suitable electronic properties for optoelectronic applications.

Author(s): Rattanachata, A; Nicolai, LC; Martins, HP; Conti, G; Verstraete, MJ; Gehlmann, M; Ueda, S; Kobayashi, K; Vishik, I; Schneider, CM; Fadley, CS; Gray, AX; Minar, J; Nemsak, S | Abstract: In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter, and for their applications in advanced technological fields. Among these compounds, LaB6 has a special place, being a traditional d-band metal without additional f bands. In order to understand the bulk electronic structure of the more complex rare-earth hexaborides, in this paper we investigate the bulk electronic structure of LaB6 using tender/hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. Furthermore, we compare the La 3d core level spectrum to cluster model calculations in order to understand the bulklike core-hole screening effects. The results show that the La 3d well-screened peak is at a lower binding energy compared to the main poorly screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. We show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulklike band structure of LaB6 determined by tender/hard x-ray angle-resolved photoemission spectroscopy (HARPES). We compare HARPES experimental results to the free-electron final-state calculations and to the more precise one-step photoemission theory including matrix element and phonon excitation effects. The agreement between the features present in the experimental ARPES data and the theoretical calculations is very good. In addition, we consider the nature and the magnitude of phonon excitations in order to interpret HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that the one-step theory of photoemission and HARPES experiments provides, at present, the only approach capable of probing, both experimentally and theoretically, true "bulklike"electronic band structure of rare-earth hexaborides and strongly correlated materials.

The layered two-dimensional material ${\mathrm{MoTe}}_{2}$ in the ${T}_{d}$ crystal phase is a semimetal which has theoretically been predicted to possess topologically nontrivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and ARPES intensity plots. Here we report a study of the near-Fermi-energy band structure of ${\mathrm{MoTe}}_{2}({T}_{d})$ by means of ARPES measurements, density functional theory, and one-step-model ARPES calculations. Good agreement between theory and experiment is obtained. We analyze the orbital character of the surface bands and its relation to the ARPES polarization dependence. We find that light polarization has a major effect on which bands can be observed by ARPES. For $s$-polarized light, the ARPES intensity is dominated by subsurface Mo $d$ orbitals, while $p$-polarized light reveals the bands mainly derived from Te $p$ orbitals. Suitable light polarization for observing either an electron or hole pocket are determined.

The lack of time-reversal symmetry and Weyl fermions give exotic transport properties to Co-based Heusler alloys. In the present study, we have investigated the role of chemical disorder on the variation of Weyl points in Co\textsubscript{2}Ti\textsubscript{1-x}V\textsubscript{x}Sn magnetic Weyl semimetal candidate. We employ the first principle approach to track the evolution of the nodal lines responsible for the appearance of Weyl node in Co$_2$TiSn as a function of V substitution in place of Ti. By increasing the V concentration in place of Ti, the nodal line moves toward Fermi level and remains at Fermi level around the middle composition. Further increase of the V content, leads shifting of nodal line away from Fermi level. Density of state calculation shows half-metallic behavior for the entire range of composition. The magnetic moment on each Co atom as a function of V concentration increases linearly up to x=0.4, and after that, it starts decreasing. We also investigated the evolution of the Weyl nodes and Fermi arcs with chemical doping. The first-principles calculations reveal that via replacing almost half of the Ti with V, the intrinsic anomalous Hall conductivity increased twice as compared to the undoped composition. Our results indicate that the composition close to the 50\% V doped Co$_2$TiSn, will be an ideal composition for the experimental investigation of Weyl physics., 14 pages, 12 figures

Hematite alpha-Fe2O3 is exposed to be an efficient photocatalytic material for the photoelectrochemical water splitting process under visible light. In the present work, we have improved the photocatalytic activity of hematite by varying tin concentration substituted for Fe in pristine hematite. To investigate the influence of the contents of Sn on the photocatalytic activity, various key properties like electronic structure and optoelectronic properties were studied based on density functional theory using generalized gradient approximation plus on-site Hubbard interaction within the WIEN2k computer program. The results of the electronic band structure show the insulating character of the pristine hematite exhibits a bandgap of 2.17 eV equals to Exp. one. The electronic structure calculations of the Sn-doped hematite explore the engineering of the orbitals around the Fermi level and result in a reduction in the bandgap, which is attributed to the corresponding Sn contents. The doping of Sn in Fe2O3 would introduce sub-bands (intermediate band) in between the valence band maximum (VBM) and Fermi level E-F, and more interestingly, half-filled intermediate bands appear around the Fermi level with the increase of Sn contents. To see the effect of intermediate bands on the optoelectronic features of the Sn-doped hematite, we also calculated the optical properties of pristine and doped hematite, which predict extra peaks assigned to transitions of electrons from intermediate bands in the infrared region. Our findings explore that the presence of intermediate bands facilitates the PEC activity of water splitting of Fe2O3, shifting from visible light to infrared region. Here, we demonstrate the idea of intermediate bands in hematite for distinctive device applications.

We performed angle-resolved photoemission spectroscopy (ARPES) of bulk2H-WSe$_2$ for different crystal orientations linked to each other bytime-reversal symmetry. We introduce a new observable called time-reversaldichroism, which quantifies the modulation of the photoemission intensity uponeffective time-reversal operation. We demonstrate that the hiddenorbital-texture of the crystal's electronic structure leaves its imprint ontothe time-reversal dichroism, due to multiple orbitals interference effects inphotoemission. Our experimental results are in quantitative agreement withstate-of-the-art fully relativistic calculations performed using the one-stepmodel of photoemission. While spin-resolved ARPES probes the spin component ofentangled spin-orbital texture in multiorbital systems, we demonstrate thattime-reversal dichroism is sensitive to its orbital-texture counterpart.

This paper shows how the detailed dispersion of the giant Rashba split surface states in the ferroelectric \ensuremath{\alpha}--GeTe(111) can be resolved by static ARPES and surface potassium doping. The authors further confirm the Rashba mechanism for these states by moving them into the occupied part of the band structure, in good agreement with state of the art DFT calculations.

Various technical developments extended the potential of angle-resolved photoemission (ARPES) tremendously during the last twenty years. In particular improved momentum, energy and spin resolution as well as the use of photon energies from few eV up to several keV makes ARPES a rather unique tool to investigate the electronic properties of solids and surfaces. With our work we present a generalization of the state of the art description of the photoemission process, the so called one-step model that describes excitation, transport to the surface and escape into the vacuum in a coherent way. In particular, we present a theoretical description of temperature-dependent ARPES with a special emphasis on spin fluctuations. Finite temperature effects are included within the so called alloy analogy model which is based on the coherent potential approximation and this way allows to describe uncorrelated lattice vibrations in combination with spin fluctuations quantitatively on the same level of accuracy. To demonstrate the applicability of our approach a corresponding numerical analysis has been applied to spin- and angle-resolved photoemission of Fe(100) at finite temperatures., Submitted to PRB

The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-${\mathrm{HfTe}}_{2}$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of potassium (K) deposition. From the ${k}_{z}$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wave-function confinement at the topmost layer. In our highest-dosing cases, a monolayerlike electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below ${E}_{F}$, we can directly measure a band overlap of $\ensuremath{\sim}0.2$ eV. However, 3D bulklike states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.

To explain the remarkable oscillations observed in the x-ray magnetic circular dichroic absorption spectra from Gd/Cu multilayers at the Cu K edge, ab initio calculations have been made using the fully relativistic Korringa-Kohn-Rostoker formalism including the spin-orbit coupling. The result reproduces well the oscillatory profiles in the near-edge region, but the peaks and valleys do not correspond to those in the difference density of states [Formula: see text] for the unoccupied Cu 4p band above the Fermi level. We find small spin and orbital moments on the interfacial Cu sites, which decay towards the core of the Cu layer. Surprisingly, neither the spin nor the orbital moments die out on the Cu sites four atomic layers away from the Co interface. This extended polarization is ascribed to the hybridization of the Cu 4p and the Gd 5d states. The accuracy of the calculation is supported by the near-bulk spin and orbital moments found on the Gd sites away from the interface.

We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe$_2$ are expected. We observe a spin accumulation above the Weyl points region, that is consistent with a spin-selective bottleneck effect due to the presence of spin polarized cone-like electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission., 6 pages, 4 figures

Physical review research 2(1), 013296 (2020). doi:10.1103/PhysRevResearch.2.013296, Using spin-resolved time-of-flight momentum microscopy, the Rashba splitting of the Tamm surface state is investigated. This state resides at the Fermi level in a projected bulk band gap of the close-packed (0001) surface of hcp Re. The Rashba splitting amounts to 0.4Å$^{−1}$. The state with smaller parallel momentum is fully separated from bulk states, whereas the Rashba branch with larger momentum hybridizes with bulk states, which leads to a suppression of spin-momentum locking. We find a good agreement of the experimental results with one step photoemission calculations that are based on ab initio theory within the local density approximation. The spin polarization of the inner Rashba state is not complete, which manifests in the occurrence of quantum interference patterns as observed by scanning tunneling microscopy. A one-to-one agreement of scanning tunneling spectroscopy and photoemission results is observed, suggesting that the quantum interference pattern originates from the inner Rashba state., Published by APS, College Park, MD

By measuring the spin polarization of GeTe films as a function of light polarization we observed that the bulk states are fully spin polarized in the initial state, in strong contrast with observations for other systems with a strong spin orbit interaction and the surface derived states in the same system. In agreement with state of the art theory, our experimental results show that fully spin polarized bulk states are an intrinsic property of the ferroelectric Rashba semiconductor amp; 945; GeTe 111 . The fact that the measured spin polarization vector does not change with light polarization can be explained by the absence of a mixing of states with a different total angular momentum J

The coupling of real and momentum space is utilized to tailor electronic properties of the collinear metallic antiferromagnet Mn2Au by aligning the real space Neel vector indicating the direction o...

Various apparative developments extended the potential of angle-resolved photoemission spectroscopy tremendously during the last two decades. Modern experimental arrangements consisting of new photon sources, analyzers and detectors supply not only extremely high angle and energy resolution but also spin resolution. This provides an adequate platform to study in detail new materials like low-dimensional magnetic structures, Rashba systems, topological insulator materials or high T C superconductors. The interest in such systems has grown enormously not only because of their technological relevance but even more because of exciting new physics. Furthermore, the use of photon energies from few eV up to several keV makes this experimental technique a rather unique tool to investigate the electronic properties of solids and surfaces. The following article reviews the corresponding recent theoretical developments in the field of angle-resolved photoemission with a special emphasis on correlation effects, temperature and relativistic aspects. The most successful theoretical approach to deal with angle-resolved photoemission is the so-called spectral function or one-step formulation of the photoemission process. Nowadays, the one-step model allows for photocurrent calculations for photon energies ranging from a few eV to more than 10 keV, to deal with arbitrarily ordered and disordered systems, to account for finite temperatures, and considering in addition strong correlation effects within the dynamical mean-field theory or similar advanced approaches.

Grimm-Sommerfeld analogous nitrides MgSiN2 , MgGeN2 , MnSiN2 , MnGeN2 , LiSi2 N3 and LiGe2 N3 (generally classified as II-IV-N2 and I-IV2 -N3 ) are promising semiconductor materials with great potential for application in (opto)electronics or photovoltaics. A new synthetic approach for these nitride materials was developed using supercritical ammonia as both solvent and nitride-forming agent. Syntheses were conducted in custom-built high-pressure autoclaves with alkali metal amides LiNH2 , NaNH2 or KNH2 as ammonobasic mineralizers, which accomplish an adequate solubility of the starting materials and promote the formation of reactive intermediate species. The reactions were performed at temperatures between 870 and 1070 K and pressures up to 230 MPa. All studied compounds crystallize in wurtzite-derived superstructures with orthorhombic space groups Pna21 (II-IV-N2 ) and Cmc21 (I-IV2 -N3 ), respectively, which was confirmed by powder X-ray diffraction. Optical bandgaps were estimated from diffuse reflectance spectra using the Kubelka-Munk function (MgSiN2 : 4.8 eV, MgGeN2 : 3.2 eV, MnSiN2 : 3.5 eV, MnGeN2 : 2.5 eV, LiSi2 N3 : 4.4 eV, LiGe2 N3 : 3.9 eV). Complementary DFT calculations were carried out to gain insight into the electronic band structures of these materials and to corroborate the optical measurements.

Ternary chalcohalides have been widely utilized for different device applications. The thermoelectric properties of SbSI, SbSeI and SbSBr have been investigated by theoretical simulations, and the findings have been performed using BoltzTraP code, based on semi-classical Boltzmann transport theory. In this study, we simulated the electronic structures using the Englo-Vosko generalized gradient approximation employed in the WIEN2k program. From the electronic band structures, we found a combination of light and heavy bands around the Fermi level in the valence band, which strongly affect the effective masses of the carriers. The entire thermoelectric parameters, like the electrical, the electronic part of the thermal conductivities, the Seebeck coefficient and the power factor have been analysed as functions of temperature and chemical potential. The correlation between the effective masses and the thermoelectric properties is also included in the discussion because the effective mass reveals the mobility of the carriers which in turn affect the thermoelectric properties. The substitution of sulfur reveals high electrical conductivity and a smaller Seebeck coefficient based on effective mass leads to the increase in the power factor.

Metal–metal charge transfer (MMCT) is expected to be the main mechanism that enables the harvesting of solar light by iron–titanium oxides for photocatalysis. We have studied FeTiO3 as a model compound for MMCT with 1s2pRIXS at the Fe K-edge. The high-energy resolution XANES enables distinguishing five pre-edge features. The three first well distinct RIXS features are assigned to electric quadrupole transitions to the localized Fe* 3d states, shifted to lower energy by the 1s core–hole. Crystal field multiplet calculations confirm the speciation of divalent iron. The contribution of electric dipole absorption due to local p-d mixing allowed by the trigonal distortion of the cation site is supported by DFT and CFM calculations. The two other nonlocal features are assigned to electric dipole transitions to excited Fe* 4p states mixed with the neighboring Ti 3d states. The comparison with DFT calculations demonstrates that MMCT in ilmenite is favored by the hybridization between the Fe 4p and delocalized Ti 3d orbitals via the O 2p orbitals., Hybridization between Fe2+ and Ti4+ 3d and 4p orbitals in ilmenite FeTiO3 is evidenced for the first time using 1s2pRIXS and in light of DFT GGA+U and crystal field multiplet calculations. An experimentally supported picture of the valence and conduction bands is derived and enables identification of metal-to-metal charge transfer states.

The angle-resolved photoemission spectra of the superconductor (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ have been investigated both experimentally and theoretically. Our results explain the previously obscured origins of all salient features of the ARPES response of this paradigm pnictide compound and reveal the origin of the Lifshitz transition. Comparison of calculated ARPES spectra with the underlying DMFT band structure shows an important impact of final state effects, which results for three-dimensional states in a deviation of the ARPES spectra from the true spectral function. In particular, the apparent effective mass enhancement seen in the ARPES response is not an entirely intrinsic property of the quasiparticle valence bands but may have a significant extrinsic contribution from the photoemission process and thus differ from its true value. Because this effect is more pronounced for low photoexcitation energies, soft-X-ray ARPES delivers more accurate values of the mass enhancement due to a sharp definition of the 3D electron momentum., Comment: including Supplemental Material

V tomto prehľadovom článku ukazujememe nový vývoj metódy LSDA+DMFT tak ako je naimplementovaná v KKR metóde. Okrem formalizmu sa zameriame na niekoľko príkladov a aplikácii tejto metódy ako napr GaMaAs, ARPES a magntický Comptov profil In this review we report on developments and various applications of the combined Density Functional and Dynamical Mean-Field Theory, the so-called LSDA + DMFT method, as implemented within the fully relativistic KKR (Korringa-Kohn-Rostoker) band structure method. The KKR uses a description of the electronic structure in terms of the single-particle Green function, which allows to study correlation effects in ordered and disordered systems independently of its dimensionality (bulk, surfaces and nano-structures). We present self-consistent LSDA+DMFT results for the ground state and spectroscopic properties of transition metal elements and their compounds. In particular we discuss the spin-orbit induced orbital magnetic moments for Fex Ni1−x disordered alloys, the magnetic Compton profiles of fcc Ni and the angle-resolved photoemission spectroscopy (ARPES) spectra for gallium manganese arsenide dilute magnetic semiconductors. For the (GaMn)As system a direct comparison with the experimental ARPES spectra demonstrates the importance of matrix element effects, the presence of the semi-infinite surface and the inclusion of layer-dependent self-energies.

We report a detailed investigation of the electronic, mechanical and optical properties of the recently discovered nitridogallosilicate CaGaSiN3 which has potential as a LED-phosphor host material. We focus on chemical disorder effects, originating from the Ga/Si site, and compared them to those of isostructural CaAlSiN3. We calculate the elastic moduli and the Debye temperature in terms of quasi harmonical approximation. Spectral properties like the joint density of states (JDOS) are evaluated and the absorption, reflectance and energy loss function are obtained from the dielectric function. The optical band gap of CaGaSiN3 from experiment is compared to the electronic band gap in terms of electronic DOS and band structure calculations. All properties are evaluated for different ordering models of Ga/Si while the experimentally observed substitutional disorder is accounted for by utilizing the Coherent Potential Approximation (CPA). We conclude a shrinking of the band gap for both CaGaSiN3 and CaAlSiN3 due to atomic disorder, which is unfavorable for potential phosphor applications. This study contributes to materials design considerations, and provides a close look on the electronic impact of substitutional disorder. Moreover, we open the scope for future investigations on solid solutions and phosphor host materials with low doping concentrations.

The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d 5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ ¯ point of the Brillouin zone.

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes with typical information depths of a few angstroms. Here, we use a combination of bulk-sensitive soft X-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard X-ray photoelectron spectroscopy (HAXPES), and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO

Previous studies on the anomalous Hall effect in coplanar noncollinear antiferromagnets are revisited and extended to magneto-optic properties, namely magneto-optic Kerr effect (MOKE) and x-ray magnetic dichroism (XMCD). Starting from group-theoretical considerations the shape of the frequency-dependent conductivity tensor for various actual and hypothetical spin configurations in cubic and hexagonal ${\mathrm{Mn}}_{3}X$ compounds is determined. Calculated MOKE and x-ray dichroism spectra are used to confirm these findings and to give estimates of the size of the effects. For ${\mathrm{Mn}}_{3}\mathrm{IrPt}$ and ${\mathrm{Mn}}_{3}\mathrm{PtRh}$ alloys the concentration dependence of the anomalous and spin Hall conductivity is studied in addition.

Heusler compounds are promising materials for spintronics with adjustable electronic properties including 100% spin polarization at the Fermi energy. We investigate the electronic states of ${\mathrm{AlO}}_{x}$ capped epitaxial thin films of the ferromagnetic half-metal ${\mathrm{Co}}_{2}\mathrm{MnSi}$ ex situ by soft x-ray angular resolved photoemission spectroscopy (SX-ARPES). Good agreement between the experimental SX-ARPES results and photoemission calculations including surface effects was obtained. In particular, we observed in line with our calculations a large photoemission intensity at the center of the Brillouin zone, which does not originate from bulk states, but from a surface resonance. This provides strong evidence for the validity of the previously proposed model based on this resonance, which was applied to explain the huge spin polarization of ${\mathrm{Co}}_{2}\mathrm{MnSi}$ observed by angular-integrating UV-photoemission spectroscopy.

International audience; The goal of the present review is to cross-compare theoretical predictions with selected experimental results on bismuth thin films exhibiting topological properties and a strong Rashba effect. The theoretical prediction that a single free-standing Bi(1 1 1) bilayer is a topological insulator has triggered a large series of studies of ultrathin Bi(1 1 1) films grown on various substrates. Using selected examples we review theoretical predictions of atomic and electronic structure of Bi thin films exhibiting topological properties due to interaction with a substrate. We also survey experimental signatures of topological surface states and Rashba effect, as obtained mostly by angle- and spin-resolved photoelectron spectroscopy.

Brief treatment and crisis intervention 21(1), 013017 (2019). doi:10.1088/1367-2630/aaf4cd, Photoemission-intensity distributions $I_{RCP/LCP}(E_{B}, k )$ measured for right- and left-circularly polarized soft x-rays revealed a large circular dichroism in angular distribution (CDAD) in the 4D parameter space ($E_B$ binding energy, $k$ momentum vector). Full-field k-imaging combined with time-of-flight energy recording at a high-brilliance soft x-ray beamline allowed mapping the CDAD in the bulk Brillouin zone of tungsten and the entire d-band complex within a few hours. CDAD-asymmetries are very high (up to 90%), persist throughout the whole photon-energy range (300–1300 eV) and show a pronounced dependence on momentum k and binding energy $E_B$, visualized as movies or sequences of cuts through the 4D object. One-step photoemission calculations for the same photon energies show fair agreement with the measured results. In addition to the requirement of a 'handed' experimental geometry, known from previous experiments on adsorbates and surface states, we find an anti-symmetric behavior of the CDAD with respect to two bulk mirror planes. A new symmetry condition along the perpendicular momentum $k_z$ makes CDAD a valuable tool for an unambiguous identification of high-symmetry planes in direct transitions in the periodic zone scheme. Technically, the method provides a circular polarimeter for soft, tender and hard x-rays., Published by Oxford Univ. Press, Oxford

Molybdenum dichalcogenides are probably the most studied single layer TMDCs by virtue of being appealing for sundry possible applications suchlike transistors, diodes, solar cells or more fundamental studies of spin or valley pseudospin and their interactions. Tungsten-based counterparts are on the other hand evincing much stronger spin-orbit coupling due to which all the spin-related effects are more stable at room temperature and thus more feasible for application. WTe2, a type-II Weyl semimetal is in particular interesting due to having two pairs of spin-differentiated Weyl points above Fermi energy. We have conducted several experiments following the evolution of the band dispersion in the vicinity of X and Y points of the Brillouin zone of WTe2 which is substantial for understanding the fundamental properties of the structure-property relation of the system. Ab-initio set of photoemission calculations was performed using SPR-KKR package and compared to experimental results.

Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.

The aim of this work is to study the structure of Ni-doped SrTiO3 thin films by X-ray diffraction (XRD). All samples were prepared by magnetron sputtering on Si and SiO2 substrates. The main objective of this work is to monitor the crystallization of the deposited thin layer of Ni-doped SrTiO3. The X-ray diffraction measurements were done on the films as deposited and after annealing in vacuum up to 900°C. The x-ray analysis was used with both geometries (symmetric and asymmetric). Those measurements allow us to get information about the influence of Ni on the final structure, the size of crystallites, the micro-strains and the deformation of the lattice. In particular, here we domonstarate that Ni doping lead to the unique stabilisation of crystall growth of SrTiO3 as compared to the undoped SrTiO3.

Germanium telluride features special spin-electric effects originating from spin-orbit coupling and symmetry breaking by the ferroelectric lattice polarization, which opens up many prospectives for electrically tunable and switchable spin electronic devices. By Mn doping of the α-GeTe host lattice, the system becomes a multiferroic semiconductor possessing magnetoelectric properties in which the electric polarization, magnetization and spin texture are coupled to each other. Employing spin- and angle-resolved photoemission spectroscopy in bulk- and surface-sensitive energy ranges and by varying dipole transition matrix elements, we disentangle the bulk, surface and surface-resonance states of the electronic structure and determine the spin textures for selected parameters. From our results we derive a comprehensive model of the α-GeTe surface electronic structure which fits to experimental data and first principle theoretical predictions and we discuss the unconventional evolution of the Rashba-type spin splitting upon manipulation by external B- and E-fields.

Here we report on our study to quantitatively describe the intensities of the valence band hard x-ray photoemission spectra (HAXPES) of a rare earth element containing 3d transition metal oxides. Using LaCoO3 as a representative model compound, we compared the experimental data to the results of ab initio one-step photoemission band structure calculations as well as to the sum of the partial density of states of the atomic constituents weighted by their tabulated photoionization cross sections. We discovered that the semicore La 5p density of states surprisingly contributes in a significant manner to the valence band spectrum: Although the La 5p partial density of states in the valence band region is negligible compared to that of the O 2p or the Co 3d, the La 5p cross section in the hard x-ray range is found to be orders of magnitude larger than that of the other subshells. This explains the long-standing issue of why the hard x-ray valence band spectra of a rare-earth element containing materials have line shapes that are very different from those taken at lower photon energies and why they cannot be described in terms of partial density of states of the subshells usually considered for the lower photon energy spectra. We infer that the contribution of the rare-earth 5p must be taken into account and cannot be ignored.

Nb3O7(OH) and Nb2O5 nanostructures are promising alternative materials to conventionally used oxides, e.g. TiO2, in the field of photoelectrodes in dye-sensitized solar cells and photoelectrochemical cells. Despite this important future application, some of their central electronic properties such as the density of states, band gap, and dielectric function are not well understood. In this work, we present combined theoretical and experimental studies on Nb3O7(OH) and H–Nb2O5 to elucidate their spectroscopic, electronic, and transport properties. The theoretical results were obtained within the framework of density functional theory based on the full potential linearized augmented plane wave method. In particular, we show that the position of the H atom in Nb3O7(OH) has an important effect on its electronic properties. To verify theoretical predictions, we measured electron energy-loss spectra (EELS) in the low loss region, as well as, the O–K and Nb–M3 element-specific edges. These results are compared wi...

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection., 26 pages, 7 figures