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Aiming for highly efficient solar cells based on wafers with a low carbon footprint, silicon (Si) EpiWafers are grown epitaxially on reusable, highly doped Si substrates with a stack of porous Si layers (PorSi) for detachment. A state‐of‐the‐art p‐type Si EpiWafer exhibiting a minority charge carrier lifetime of up to 2.2 ms detected at an excess charge carrier density of ≈1 × 1015 cm−3 by photoluminescence (PL) imaging is presented. This translates to a predicted solar cell efficiency of 25.6%, calculated by efficiency limiting bulk recombination analysis (ELBA), and corresponds to losses of less than 1%abs compared to the theoretical limit of the investigated solar cell concept. A detailed loss analysis shows that the major remaining quality limitations are structural defects, specifically stacking faults (SFs). Therefore, the recombination activity of isolated SFs in epitaxially grown reference (EpiRef) wafers on polished substrates without a PorSi is assessed by highly resolved μPL mappings. The recombination activity rises with the number of dislocations within an SF as demonstrated by a comparison to microscope images. When using highly doped substrates, as currently required for EpiWafer fabrication, EpiRef wafers show more SFs exhibiting additionally a higher number of dislocations than SFs in EpiRef wafers on moderately doped substrates. [ABSTRACT FROM AUTHOR]

Combining the advantages of a high‐efficiency solar cell concept and a low carbon footprint base material is a promising approach for highly efficient, sustainable, and cost‐effective solar cells. In this work, we investigate the suitability of epitaxially grown p‐type silicon wafers for solar cells with tunnel oxide passivating contact rear emitter. As a first proof of principle, an efficiency limiting bulk recombination analysis of epitaxially grown p‐type silicon wafers deposited on high quality substrates (EpiRef) unveils promising cell efficiency potentials exceeding 25% for three different base resistivities of 3, 14, and 100 Ω cm. To understand the remaining limitations in detail, concentrations of metastable defects Fei, CrB and BO are assessed by lifetime‐calibrated photoluminescence imaging and their impact on the overall recombination is evaluated. The EpiRef wafers' efficiency potential is tracked along the solar cell fabrication process to quantify the impact of high temperature treatments on the material quality. We observe large areas with few structural defects on the wafer featuring lifetimes exceeding 10 ms and an efficiency potential of 25.8% even after exposing the wafer to a thermal oxidation at 1050 °C. [ABSTRACT FROM AUTHOR]

During the formation of Si nanocrystals (Si NC) in SixC1-x layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of SixC1-x as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated SixC1-x films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700 °C to 1100°C for RTA and at flash energies between 34 J/cm² and 62 J/cm2 for FLA. Grazing incidence X-ray diffraction and Fourier transformed infrared spectroscopy were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm² and 47 J/cm² for Si0.63C0.37 and Si0.77C0.23 samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content. [ABSTRACT FROM AUTHOR]

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4×1019 cm-3 throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≥6×1013 cm-2. Doping levels of (0.5-3.5)×1019 cm-3 are induced at the Si substrate surface by both boron and phosphorus-doped a-SiC:H. When the Si substrate is doped opposite to the a-SiC:H p-n junctions are induced at a depth of 0.9-1.4 lm within the Si substrate for substrate resistivities of 1-10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity. [ABSTRACT FROM AUTHOR]