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We observe a large negative magnetoresistance and a decrease of resistivity with increasing temperature, known as the Gurzhi effect, in a bilayer electron (BL) system formed by a wide GaAs quantum well. A hydrodynamic model for the single fluid transport parameters in narrow channels is employed and successfully describes our experimental findings. We find that the electron-electron scattering in the bilayer is more intensive in comparison with a single-band well (SW). The hydrodynamic assumption implies a strong dependence on boundary conditions, which can be characterized by slip length, describing the behavior of a liquid near the edge. Our results reveal that slip length in a BL is shorter than in a SW, and that the BL system goes deeper into the hydrodynamic regime. This is in agreement with the model proposed where the slip length is of the order of the electron-electron mean free path., Comment: 8 pages, 8 figures

The electronic analog of the Poiseuille flow is the transport in a narrow channel with disordered edges that scatter electrons in a diffuse way. In the hydrodynamic regime, the resistivity decreases with temperature, referred to as the Gurzhi effect, distinct from conventional Ohmic behaviour. We studied experimentally an electronic analog of the Stokes flow around a disc immersed in a two-dimensional viscous liquid. The circle obstacle results in an additive contribution to resistivity. If specular boundary conditions apply, it is no longer possible to detect Poiseuille type flow and the Gurzhi effect. However, in flow through a channel with a circular obstacle, the resistivity decreases with temperature. By tuning the temperature, we observed the transport signatures of the ballistic and hydrodynamic regimes on the length scale of disc size. Our experimental results confirm theoretical predictions., Comment: 10 pages, 5 figures

We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2 results in two orders of magnitude enhancement of the QPC conductance. The effect has a superlinear intensity dependence and increases with the dark conductivity decrease. It is also characterized by strong polarization and frequency dependencies. We demonstrate that all experimental findings can be well explained by the photon-mediated tunneling through the QPC. Corresponding calculations are in a good agreement with the experiment., Comment: 8 pages, 8 figures

On a dense energy grid reaching up to 75 meV electron collision energy the fragmentation angle and the kinetic energy release of neutral dissociative recombination fragments have been studied in a twin merged beam experiment. The anisotropy described by Legendre polynomials and the extracted rotational state contributions were found to vary on a likewise narrow energy scale as the rotationally averaged rate coefficient. For the first time angular dependences higher than 2$^{nd}$ order could be deduced. Moreover, a slight anisotropy at zero collision energy was observed which is caused by the flattened velocity distribution of the electron beam., Comment: 8 pages, 4 figures; The Article will be published in the proceedings of DR 2007, a symposium on Dissociative Recombination held in Ameland, The Netherlands (18.-23. July 2008); Reference 19 has been published meanwhile in S. Novotny, PRL 100, 193201 (2008)

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results., Comment: 13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review A