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Using the chemical spray pyrolysis (CSP) technique, nanostructured undoped and Co3O4:In thin films are deposited. The effect of indium doping content in Cobalt ranged from 1% to 3% on optical, structural, and topographical properties of Co3O4 nanostructured thin films. No new peaks belonging to the In phase were seen, according to X-ray diffraction research, which revealed that pure and Co3O4: In thin films are polycrystalline in and cubic phase with (111), (311), (400), and (511) preferable orientation for all filmsThe Scherrer formula computation of average crystallite size shows that the size of Nano crystallites grows when doping is enhanced. AFM micrographs demonstrated how the surface shape of the films was discovered to be influenced by the inclusion of indium in the Co3O4 location.SEM images of Undoped Co3O4 and Co3O4:In films (CSP technique), showing separate semi-spherical blocks (120-200 nm) of nanoparticles (<30 nm). Band gap values for pure and doped were 2.52 to 2.38 eV. Resistance increases with increases Indium-doping, indicating more charge carriers and potential surface roughness influence. Sensitivity decreases with higher Indium concentrations, attributing to enhanced crystallinity and nano-crystalline size. [ABSTRACT FROM AUTHOR]

In these studies, radio frequency (RF) magnetron sputtering was used to produce nanostructured CuO thin films on glass bases with different thicknesses of (250, 300, and 350 nm). X-ray diffraction (XRD) analysis of these films revealed a polycrystalline structure with a preferred peak along the (111) plane. The Scherrer formula was used to compute the grain size. It was found that the average grain sizes are 10.78 nm, 11.36 nm, and 11.84 nm for film thicknesses of 250, 3000, and 300 nm, respectively, while the dislocation density and strain values decline. The surface roughness decreased from 9.30 nm to 4.71 nm as the thickness increased, according to atomic force microscopy (AFM) data. As the thickness of the film grew, the root mean square (RMS) roughness likewise decreased from 9.18 nm to 4.29 nm. The homogenous, semi-spherical structure comprises uniformly distributed particles, as demonstrated by SEM images. The optical properties of the grown films showed that the absorption coefficient considerably increased with film thickness. Transmittance, band gap, refractive index, and extinction coefficient all decrease with increasing film thickness. The hydrogen gas measurements, indicated a reduction in sensitivity as the thickness and gas concentration increased at 30°C. [ABSTRACT FROM AUTHOR]

This study uses glass substrates to create nanostructured TiO2 thin films employing Sol-Gel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall. [ABSTRACT FROM AUTHOR]

TiO2 and TiO2:Cu films were deposited by spray pyrolysis (SP). X-ray diffraction reveals that deposited films have a polycrystalline structural. The AFM image of the surface reveals that roughness and root mean square affected by doping. Optical transmission of films was found to decrease from 94 % to 84 % with the as the doping percentage increase to 3. Optical bandgap (Eg) of TiO2 thin film was 3.947eV. The bandgap is shifted to lower energies upon doping. [ABSTRACT FROM AUTHOR]