1. Effect of Light Absorption in InGaN/GaN Vertical Light-Emitting Diodes
- Author
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O Bh, Lee Js, Kang M, Kim So, Sung J, Lee Mw, Lee Ea, Song H, Jeon Ks, Choi Yh, Choi H, and Ryu Hy
- Subjects
Materials science ,Flat surface ,business.industry ,Doping ,Biomedical Engineering ,Bioengineering ,Nanotechnology ,General Chemistry ,Condensed Matter Physics ,law.invention ,law ,Optoelectronics ,General Materials Science ,Quantum efficiency ,Thin film ,business ,Layer (electronics) ,Light-emitting diode ,Diode - Abstract
For evaluating the effect of light absorption in vertically structured thin film light-emitting diodes (VLEDs), we investigate the dependence of the efficiencies on the several specific parameters including thickness and doping concentration (N(D)) of the n-GaN layer, a design of hetero-structures of the n-GaN layer, and a number of pairs of multi-quantum wells (MQWs). Generally, there is a complementary relation between internal quantum efficiency (IQE) and light extraction efficiency (LEE). However, we confirmed that LEE determined by light absorption is more dominant than IQE in VLED structures with a textured surface, from numerical simulation and experimental results. Effect of light absorption is more prominent in the vertical chip with a textured surface than in that with a flat surface, because a travel length of light extracted from the textured surface is longer. Minimizing light absorption in VLEDs is a key technology for improving light output, and light absorption speaks for the index of enhancement by the general technologies for improving LEE.
- Published
- 2015