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Desorption kinetics of tetrakis(diethylamido)zirconium (TDEAZr, Zr(N(C2H5)2)4) from Si(1 0 0) were studied by temperature programmed desorption (TPD) and Auger electron spectroscopy (AES). A TDEAZr desorption peak from condensed multi-layers was observed at 170 K for high exposures. Partial decomposition of monolayer TDEAZr proceeded on Si(1 0 0). Un-reacted TDEAZr desorbed molecularly at 320 K. Partially decomposed Zr-diethylamido desorbed at 430 K. AES results indicated that carbon and nitrogen remained on Si(1 0 0) after TPD experiments through the decomposition of diethylamido ligands. [Copyright &y& Elsevier]

The thermal decomposition pathway and desorption of diethylamido of tetrakis(diethylamido)zirconium [TDEAZr, Zr(N(C[SUB2]H[SUB5])[SUB2])[SUB4]] on Si(100) were studied using temperature-programmed desorption (TPD) and X-ray photoelectron spectroscopy (XPS). During TPD experiments, ethylethyleneimine (C[SUB2]H[SUB5]N=CHCH[SUB3]), diethylamine [NH(C[SUB2]H[SUB5])[SUB2]], acetonitrile (CH[SUB3]CN), ethylene (C[SUB2H[SUB4) and hydrogen (H[SUB2) desorbed as the main decomposition products of diethylamido, which was chemisorbed on Si(100) through the scission of the zirconium-diethylamido bond in TDEAZr. After TPD runs, the formation of silicon carbide and silicon nitride was observed on the surface by XPS, indicating that a complete decomposition of diethylamido proceeded. This could be a reaction pathway of C, N incorporation in the thin 3lm growth using TDEAZr as a Zr precursor. [ABSTRACT FROM AUTHOR]