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1. Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure.

7. Phase Stabilized MOCVD Growth of β‐Ga2O3 Using SiOx on c‐Plane Sapphire and AlN/Sapphire Template.

9. MOCVD-grown β-Ga 2 O 3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor.

12. Thick AlN Templates By MOCVD for the Thermal Management of III-N Electronics

13. Comparative Spectroscopic Study of Aluminum Nitride Grown by MOCVD in H 2 and N 2 Reaction Environment.

17. Publisher's Note: “Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence” [Appl. Phys. Lett. 115, 213502 (2019)]

21. Ultrawide bandgap AlxGa1–xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1.

22. Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence.

28. Phase Stabilized MOCVD Growth of β‐Ga2O3Using SiOxon c‐Plane Sapphire and AlN/Sapphire Template

30. Ultrawide bandgap AlxGa1-xN channel heterostructure field transistors with drain currents exceeding 1.3 A mm?1

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