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Laser-driven (LD) ion acceleration has been explored in a newly constructed short focal length beamline at the BELLA petawatt facility (interaction point 2, iP2). For applications utilizing such LD ion beams, a beam transport system is required, which for reasons of compactness be ideally contained within 3 m. The large divergence and energy spread of LD ion beams present a unique challenge to transporting them compared to beams from conventional accelerators. This work gives an overview of proposed compact transport designs that can satisfy different requirements depending on the application for the iP2 proton beamline such as radiation biology, material science, and high energy density science. These designs are optimized for different parameters such as energy spread and peak proton density according to an application's need. The various designs consist solely of permanent magnet elements, which can provide high magnetic field gradients on a small footprint. While the field strengths are fixed, we have shown that the beam size and energy can be tuned effectively by varying the placement of the magnets. The performance of each design was evaluated based on high order particle tracking simulations of typical LD proton beams. A more detailed investigation was carried out for a design to deliver 10 MeV LD accelerated ions for radiation biology applications. With these transport system designs, the iP2 beamline is ready to house various application experiments., Comment: 6 pages, 3 figures, accepted for publication in the proceedings of the 2022 IEEE Advanced Accelerator Concepts Workshop (AAC). J.T. De Chant is also affiliated with Michigan State University

Similar to reading the transistor state in classical computers, identifying the quantum bit (qubit) state is a fundamental operation to translate quantum information. However, identifying quantum state has been the slowest and most susceptible to errors operation on superconducting quantum processors. Most existing state discrimination algorithms have only been implemented and optimized "after the fact" - using offline data transferred from control circuits to host computers. Real-time state discrimination is not possible because a superconducting quantum state only survives for a few hundred us, which is much shorter than the communication delay between the readout circuit and the host computer (i.e., tens of ms). Mid-circuit measurement (MCM), where measurements are conducted on qubits at intermediate stages within a quantum circuit rather than solely at the end, represents an advanced technique for qubit reuse. For MCM necessitating single-shot readout, it is imperative to employ an in-situ technique for state discrimination with low latency and high accuracy. This paper introduces QubiCML, a field-programmable gate array (FPGA) based system for real-time state discrimination enabling MCM - the ability to measure the state at the control circuit before/without transferring data to a host computer. A multi-layer neural network has been designed and deployed on an FPGA to ensure accurate in-situ state discrimination. For the first time, ML-powered quantum state discrimination has been implemented on a radio frequency system-on-chip FPGA platform. The deployed lightweight network on the FPGA only takes 54 ns to complete each inference. We evaluated QubiCML's performance on superconducting quantum processors and obtained an average accuracy of 98.5% with only 500 ns readout. QubiCML has the potential to be the standard real-time state discrimination method for the quantum community.

The underlying market trends that drive stock price fluctuations are often referred to in terms of bull and bear markets. Optimal stock portfolio selection methods need to take into account these market trends; however, the bull and bear market states tend to be unobserved and can only be assigned retrospectively. We fit a linked hidden Markov model (LHMM) to relative stock price changes for S&P 500 stocks from 2011--2016 based on weekly closing values. The LHMM consists of a multivariate state process whose individual components correspond to HMMs for each of the 12 sectors of the S\&P 500 stocks. The state processes are linked using a Gaussian copula so that the states of the component chains are correlated at any given time point. The LHMM allows us to capture more heterogeneity in the underlying market dynamics for each sector. In this study, stock performances are evaluated in terms of capital gains using the LHMM by utilizing historical stock price data. Based on the fitted LHMM, optimal stock portfolios are constructed to maximize capital gain while balancing reward and risk. Under out-of-sample testing, the annual capital gain for the portfolios for 2016--2017 are calculated. Portfolios constructed using the LHMM are able to generate returns comparable to the S&P 500 index.

Developing collaborative research platforms for quantum bit control is crucial for driving innovation in the field, as they enable the exchange of ideas, data, and implementation to achieve more impactful outcomes. Furthermore, considering the high costs associated with quantum experimental setups, collaborative environments are vital for maximizing resource utilization efficiently. However, the lack of dedicated data management platforms presents a significant obstacle to progress, highlighting the necessity for essential assistive tools tailored for this purpose. Current qubit control systems are unable to handle complicated management of extensive calibration data and do not support effectively visualizing intricate quantum experiment outcomes. In this paper, we introduce QubiCSV (Qubit Control Storage and Visualization), a platform specifically designed to meet the demands of quantum computing research, focusing on the storage and analysis of calibration and characterization data in qubit control systems. As an open-source tool, QubiCSV facilitates efficient data management of quantum computing, providing data versioning capabilities for data storage and allowing researchers and programmers to interact with qubits in real time. The insightful visualization are developed to interpret complex quantum experiments and optimize qubit performance. QubiCSV not only streamlines the handling of qubit control system data but also improves the user experience with intuitive visualization features, making it a valuable asset for researchers in the quantum computing domain.

Exposure of nitrogen doped diamond to high energy, heavy ions induces formation of vacancy related color centers aligned along the trajectories of the ions. Quasi 1D chains of coupled NV centers with lengths of a few tens of microns can be building blocks for quantum information processing and they provide insights into harsh radiation-matter interactions. Here, we report on color center formation in diamond (1 ppm nitrogen) with 1 GeV gold and uranium ions. Using depth-resolved photoluminescence, we observe direct formation of single vacancy related color centers (GR1 centers) along the ion tracks. Mobile vacancies can form NV-centers with native nitrogen atoms during thermal annealing. Molecular dynamics simulations indicate that both isolated vacancies and defect clusters form along ion trajectory through electronic stopping processes, leading to broad color center profiles that range from the sample surface to a depth of about 25 microns. We quantify the spin properties of NV-centers formed by swift heavy ions through optical detection of magnetic resonance (ODMR) and validate the feasibility of using swift-heavy-ion-generated NV$^{-}$ along quasi 1D chains (for isolated tracks from low fluence irradiations) or in thin sheets of coupled 1D spin chains (formed with higher ion fluences) for NV-based magnetometry and for the exploration of quasi 1D and 2D spin textures in diamond.

The remarkable frequency stability of resonant systems in the optical domain (optical cavities and atomic transitions) can be harnessed at frequency scales accessible by electronics using optical frequency division. This capability is revolutionizing technologies spanning time keeping to high-performance electrical signal sources. A version of the technique called 2-point optical frequency division (2P-OFD) is proving advantageous for application to high-performance signal sources. In 2P-OFD, an optical cavity anchors two spectral endpoints defined by lines of a frequency comb. The comb need not be self-referenced, which greatly simplifies the system architecture and reduces power requirements. Here, a 2P-OFD microwave signal source is demonstrated with record-low phase noise using a microcomb. Key to this advance is a spectral endpoint defined by a frequency agile single-mode dispersive wave that is emitted by the microcomb soliton. Moreover, the system frequency reference is a compact all-solid-state optical cavity with a record Q-factor. The results advance integrable microcomb-based signal sources into the performance realm of much larger microwave sources.

Numerous modern technologies are reliant on the low-phase noise and exquisite timing stability of microwave signals. Substantial progress has been made in the field of microwave photonics, whereby low noise microwave signals are generated by the down-conversion of ultra-stable optical references using a frequency comb. Such systems, however, are constructed with bulk or fiber optics and are difficult to further reduce in size and power consumption. Our work addresses this challenge by leveraging advances in integrated photonics to demonstrate low-noise microwave generation via two-point optical frequency division. Narrow linewidth self-injection locked integrated lasers are stabilized to a miniature Fabry-P\'{e}rot cavity, and the frequency gap between the lasers is divided with an efficient dark-soliton frequency comb. The stabilized output of the microcomb is photodetected to produce a microwave signal at 20 GHz with phase noise of -96 dBc/Hz at 100 Hz offset frequency that decreases to -135 dBc/Hz at 10 kHz offset--values which are unprecedented for an integrated photonic system. All photonic components can be heterogeneously integrated on a single chip, providing a significant advance for the application of photonics to high-precision navigation, communication and timing systems.

Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using fs laser pulses in combination with hydrogen-based defect activation and passivation. By selecting forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we form Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with very promising spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen and enable programmable quantum emitter formation in a qubit-by-design paradigm.

By self-injection-locking a 1560 nm distributed feedback semiconductor laser to a high-$Q$ silicon nitride resonator, a high-coherence 780 nm second harmonic signal is generated via the photogalvanic-induced second-order nonlinearity. A record-low frequency noise floor of 4 Hz$^2$/Hz is achieved for the 780 nm emission. The approach can be generalized for signal generation over a wide range of visible and near-visible bands.

Soliton microcombs are helping to advance the miniaturization of a range of comb systems. These combs mode lock through the formation of short temporal pulses in anomalous dispersion resonators. Here, a new microcomb is demonstrated that mode locks through the formation of pulse pairs in normal-dispersion coupled-ring resonators. Unlike conventional microcombs, pulses in this system cannot exist alone, and instead must phase lock in pairs to form a bright soliton comb. Also, the pulses can form at recurring spectral windows and the pulses in each pair feature different optical spectra. This pairwise mode-locking modality extends to higher dimensions and we demonstrate 3-ring systems in which 3 pulses mode lock through alternating pairwise pulse coupling. The results are demonstrated using the new CMOS-foundry platform that has not previously produced bright solitons on account of its inherent normal dispersion. The ability to generate multi-color pulse pairs over multiple rings is an important new feature for microcombs. It can extend the concept of all-optical soliton buffers and memories to multiple storage rings that multiplex pulses with respect to soliton color and that are spatially addressable. The results also suggest a new platform for the study of quantum combs and topological photonics.

Normal group velocity dispersion (GVD) microcombs offer high comb line power and high pumping efficiency compared to bright pulse microcombs. The recent demonstration of normal GVD microcombs using CMOS-foundry-produced microresonators is an important step towards scalable production. However, the chromatic dispersion of CMOS devices is large and impairs generation of broadband microcombs. Here, we report the development of a microresonator in which GVD is reduced due to a couple-ring resonator configuration. Operating in the turnkey self-injection-locking mode, the resonator is hybridly integrated with a semiconductor laser pump to produce high-power-efficiency combs spanning a bandwidth of 9.9 nm (1.22 THz) centered at 1560 nm, corresponding to 62 comb lines. Fast, linear optical sampling of the comb waveform is used to observe the rich set of near-zero GVD comb behaviors, including soliton molecules, switching waves (platicons) and their hybrids. Tuning of the 20 GHz repetition rate by electrical actuation enables servo locking to a microwave reference, which simultaneously stabilizes the comb repetition rate, offset frequency and temporal waveform. This hybridly integrated system could be used in coherent communications or for ultra-stable microwave signal generation by two-point optical frequency division., Comment: 8 pages, 4 figures

While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such PICs could offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. However, there are two major issues preventing the realization of such envisioned PICs: the high phase noise of semiconductor lasers, and the difficulty of integrating optical isolators directly on chip. PICs are still considered as inferior solutions in optical systems such as microwave synthesizers, optical gyroscopes and atomic clocks, despite their advantages in size, weight, power consumption and cost (SWaPC). Here, we challenge this convention by introducing three-dimensional (3D) integration in silicon photonics that results in ultra-low-noise, isolator-free PICs. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain and ultra-low-loss (ULL) silicon nitride (SiN) waveguides with optical loss around 0.5 dB/m are demonstrated. Consequently, the demonstrated PIC enters a new regime, such that an integrated ultra-high-Q cavity reduces the laser noise close to that of fiber lasers. Moreover, the cavity acts as an effective block for any downstream on-chip or off-chip reflection-induced destabilization, thus eliminating the need for optical isolators. We further showcase isolator-free, widely-tunable, low-noise, heterodyne microwave generation using two ultra-low-noise lasers on the same silicon chip.

Laser-driven ion beams have gained considerable attention for their potential use in multidisciplinary research and technology. Pre-clinical studies into their radiobiological effectiveness have established the prospect of using laser-driven ion beams for radiotherapy. In particular, research into the beneficial effects of ultra-high instantaneous dose rates is enabled by the high ion bunch charge and uniquely short bunch lengths present for laser-driven ion beams. Such studies require reliable, online dosimetry methods to monitor the bunch charge for every laser shot to ensure that the prescribed dose is accurately applied to the biological sample. In this paper we present the first successful use of an Integrating Current Transformer (ICT) for laser-driven ion accelerators. This is a non-invasive diagnostic to measure the charge of the accelerated ion bunch. It enables online dose measurements in radiobiological experiments and facilitates ion beam tuning, in particular, optimization of the laser ion source and alignment of the proton transport beamline. We present the ICT implementation and the correlation with other diagnostics such as radiochromic films, a Thomson parabola spectrometer and a scintillator.

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.