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Your search keyword '"Jia, Mengmeng"' showing total 499 results
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499 results on '"Jia, Mengmeng"'

25. Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit.

Author

Guo, Pengwen, Zhou, Yuxue, Yang, Haolin, Pan, Jiong, Yin, Jiaju, Zhao, Bingchen, Liu, Shangjian, Peng, Jiali, Jia, Xinyuan, Jia, Mengmeng, Yang, Yi, and Ren, Tianling

Subjects
CARBON nanotubes, ELECTRIC fields, MONOMOLECULAR films, SIMULATION methods & models
Abstract

The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit. [ABSTRACT FROM AUTHOR]

Published
2024
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38. Information Diffusion Model Based on Opportunity, Trust and Motivation

Author

Wan, Jihong, Chen, Xiaoliang, Du, Yajun, Jia, Mengmeng, Hutchison, David, Series Editor, Kanade, Takeo, Series Editor, Kittler, Josef, Series Editor, Kleinberg, Jon M., Series Editor, Mattern, Friedemann, Series Editor, Mitchell, John C., Series Editor, Naor, Moni, Series Editor, Pandu Rangan, C., Series Editor, Steffen, Bernhard, Series Editor, Terzopoulos, Demetri, Series Editor, Tygar, Doug, Series Editor, Weikum, Gerhard, Series Editor, Zhang, Shichao, editor, Liu, Tie-Yan, editor, Li, Xianxian, editor, Guo, Jiafeng, editor, and Li, Chenliang, editor

Published
2018
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41. Ultraviolet Photodetector based on Sr2Nb3O10 Perovskite Nanosheets.

Author

Zhang, Binbin, Jia, Mengmeng, Liang, Qi, Wu, Jinsong, Zhai, Junyi, and Li, Baowen

Abstract

Liquid-phase exfoliation was employed to synthesize Sr2Nb3O10 perovskite nanosheets with thicknesses down to 1.76 nm. Transmission electron microscopy (TEM), atomic force microscope (AFM), X-ray photoelectron spectrometer (XPS), and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets. A UV photodetector based on individual Sr2Nb3O10 nanosheets was prepared to demonstrate the application of an ultraviolet (UV) photodetector. The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3 × 105 A·W−1 at 5 V bias under 280 nm illumination, a photocurrent of 60 nA, and an on/off ratio of 3 × 102. [ABSTRACT FROM AUTHOR]

Published
2024
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