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Your search keyword '"Jiang, Yi-xiang"' showing total 7 results
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7 results on '"Jiang, Yi-xiang"'

1. Model-free adaptive chaos control for the boost converter.

Author

Li, Ning-zhou, Jiang, Yi-xiang, and Wei, Xiao-juan

Subjects
*ADAPTIVE control systems, *CHAOS theory, *PERIODIC motion, *MOTION analysis, *EQUATIONS of state
Abstract

In order to solve the dynamic analysis and chaotic motion control problems of the current-mode-controlled Boost converter system, a state equation model in the continuous current mode is established. The evolutionary path of the periodic motion of the system through the doubling bifurcation to the chaotic motion is analyzed by the bifurcation diagram, Poincaré sections and phase portraits. Then, according to the fundamental principle of the resonant parametric perturbation (RPP) method, a controller is designed based on the model-free adaptive control (MFAC) method to output the perturbation amplitude, and the disturbance quantity is calculated according to the perturbation amplitude. By adding a small amplitude disturbance to the controllable parameter of the controlled system, the chaotic motion of the system is guided to expected periodic orbit. The advantage of this method is that no precise mathematical model (PMM) of the system is required. At the same time, the design of the controller is simple and easy to implement. [ABSTRACT FROM AUTHOR]

Published
2024
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7. The formation mechanism of the silicon nano-clusters embedded in silicon nitride

Author

Zou Xiang-Yun, Jiang Yi-Xiang, and Yuan Jin-She

Subjects
Materials science, Silicon, General Physics and Astronomy, Nanoparticle, chemistry.chemical_element, Crystal structure, Chemical reaction, Silane, Nitrogen, chemistry.chemical_compound, Chemical engineering, chemistry, Silicon nitride, Plasma-enhanced chemical vapor deposition
Abstract

The silicon nitride films are prepared on c-Si substrates by plasma enhanced chemical deposition (PECVD) with silane as the silicon source in mixture gas (N2/NH3) as the nitrogen source. We prepare different kinds of films at different flow rates of the nitrogen with other conditions kept the same. X-ray diffraction (XRD) is employed to analyze the crystal structure, and the existence of the silicon nanoparticles embedded in the silicon nitride film is verified according to the caculation of the lattice size. Fourier transform infrared spectra are employed to probe the concentration evolutions of various chemical bonds with the flow rate of the nitrogen, with which by combining the chemical reaction process, the formation mechanism of the silicon nano-clusters embedded in silicon nitride is investigated. The results show the initial positions of silicon nanoparticles are conducible to the formation of silicon nanoparticles when the chemical reaction proceeds towards the direction in which the SiSi bonds form. In addition, XRD analysis and photoluminescence characteristics show that the size and the concentration of the embedded nanoparticles increase with the flow rate of the nitrogen increasing.

Published
2012

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