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Semiconductors with high thermal conductivity and electron-hole mobility are of great importance for electronic and photonic devices as well as for fundamental studies. Among the ultrahigh–thermal conductivity materials, cubic boron arsenide (c-BAs) is predicted to exhibit simultaneously high electron and hole mobilities of >1000 centimeters squared per volt per second. Using the optical transient grating technique, we experimentally measured thermal conductivity of 1200 watts per meter per kelvin and ambipolar mobility of 1600 centimeters squared per volt per second at the same locations on c-BAs samples at room temperature despite spatial variations. Ab initio calculations show that lowering ionized and neutral impurity concentrations is key to achieving high mobility and high thermal conductivity, respectively. The high ambipolar mobilities combined with the ultrahigh thermal conductivity make c-BAs a promising candidate for next-generation electronics.

Antiferromagnetic insulators offer strategic advantages in spintronic applications because of their negligible stray fields and ultrafast magnetic dynamics. Control of their magnetization and readout of their magnetic state are essential for these applications but remain challenging. Here we report the electrical detection of room-temperature magnetization switching in the canted antiferromagnetic insulator LaFeO3, capped with a Pt or W overlayer. The observation of a large magneto-thermovoltage with an in-plane temperature gradient suggests that the mechanism is the swapping of spin currents in the antiferromagnet. This effect provides a sensitive electrical probe of the tiny net magnetization in the insulator, which can be manipulated by a magnetic field on the order of 10 mT. Our results highlight a new material class of insulating canted antiferromagnets for spintronics and spin caloritronics and suggests a method for the electrical readout of magnetic signals in an antiferromagnetic insulator. Post-print / Final draft

Because of the possible crossover of Pb and 3d transition-metal (TM) redox levels, a charge transfer between Pb and TM leads to a continuous evolution from Pb2+Ti4+O3 to Pb4+Ni2+O3 in the perovskit...

The Mott insulator YVO$_{3}$ with $T_{N}$ = 118 K is revisited to explore the role of spin, lattice and orbital correlations across the multiple structural and magnetic transitions observed as a function of temperature. Upon cooling, the crystal structure changes from orthorhombic to monoclinic at 200 K, and back to orthorhombic at 77 K, followed by magnetic transitions. From the paramagnetic high temperature phase, C-type ordering is first observed at 118 K, followed by a G-type spin re-orientation transition at 77 K. The dynamics of the transitions were investigated via inelastic neutron scattering and first principles calculations. An overall good agreement between the neutron data and calculated spectra was observed. From the magnon density of states, the magnetic exchange constants were deduced to be $J_{ab}$ = $J_{c}$ = -5.8 meV in the G-type spin phase, and $J_{ab}$ = -3.8 meV, $J_{c}$ = 7.6 meV at 80 K and $J_{ab}$ = -3.0 meV, $J_{c}$ = 6.0 meV at 100 K in the C-type spin phase. Paramagnetic scattering was observed in the spin ordered phases, well below the C-type transition temperature, that continuously increased above the transition. Fluctuations in the temperature dependence of the phonon density of states were observed between 50 and 80 K as well, coinciding with the G-type to C-type transition. These fluctuations are attributed to optical oxygen modes above 40 meV, from first principles calculations. In contrast, little change in the phonon spectra is observed across $T_{N}$., 8 pages, 5 figures

The nature of the pseudogap phase of cuprates remains a major puzzle. Although there are indications that this phase breaks various symmetries, there is no consensus on its fundamental nature. Although Fermi-surface, transport and thermodynamic signatures of the pseudogap phase are reminiscent of a transition into a phase with antiferromagnetic order, there is no evidence for an associated long-range magnetic order. Here we report measurements of the thermal Hall conductivity $\kappa_{\rm xy}$ in the normal state of four different cuprates (Nd-LSCO, Eu-LSCO, LSCO, and Bi2201) and show that a large negative $\kappa_{\rm xy}$ signal is a property of the pseudogap phase, appearing with the onset of that phase at the critical doping $p^*$. Since it is not due to charge carriers -- as it persists when the material becomes an insulator, at low doping -- or magnons -- as it exists in the absence of magnetic order -- or phonons -- since skew scattering is very weak, we attribute this $\kappa_{\rm xy}$ signal to exotic neutral excitations, presumably with spin chirality. The thermal Hall conductivity in the pseudogap phase of cuprates is reminiscent of that found in insulators with spin-liquid states. In the Mott insulator LCO, it attains the highest known magnitude of any insulator.

We explore the existence of the collective orbital excitations, orbitons, in the canonical orbital system KCuF$_3$. Using the Cu $L_3$-edge resonant inelastic X-ray scattering we show that the non-dispersive high-energy peaks result from the Cu$^{2+}$ $dd$ orbital excitations. These high-energy modes show good agreement with the {\it ab-initio} quantum chemistry calculation based on a single cluster, indicating that the $dd$ excitations are highly localized. At the same time, the low-energy excitations present clear dispersion. They match extremely well with the two-spinon continuum following the comparison with Mueller Ansatz calculations. The localized $dd$ excitations and the observation of the strongly dispersive magnetic excitations suggest that orbiton dispersion is below the resolution detection limit. Our results can reconcile with the strong {\it local} Jahn-Teller effect in KCuF$_3$, which predominantly drives orbital ordering., Comment: 6 pages, 4 figures

Spin-phonon interaction is an important channel for spin and energy relaxation in magnetic insulators. Understanding this interaction is critical for developing magnetic insulator-based spintronic devices. Quantifying this interaction in yttrium iron garnet (YIG), one of the most extensively investigated magnetic insulators, remains challenging because of the large number of atoms in a unit cell. Here, we report temperature-dependent and polarization-resolved Raman measurements in a YIG bulk crystal. We first classify the phonon modes based on their symmetry. We then develop a modified mean-field theory and define a symmetry-adapted parameter to quantify spin-phonon interaction in a phonon-mode specific way for the first time in YIG. Based on this improved mean-field theory, we discover a positive correlation between the spin-phonon interaction strength and the phonon frequency., Comment: 12 pages, 4 figures, 1 table; (Supp. Info. 10 pages, 5 figures, 2 tables)

In his quest to understand, test, and ultimately engineer interactions amongst charge, spin, orbital, and chemical bonding in crystalline solids, John B. Goodenough transcended the conventional perspectives of solid state chemistry and condensed matter physics to create his own unique approach to describe physical properties in transition-metal compounds. As Guest Editors, we are extremely pleased to present this compilation of invited contributions, a subset of those comprising the published in theJournal of The Electrochemical Society(JES) and theECS Journal of Solid Science and Technology(JSS) joint focus issue in his honor on the occasion of his 100th birthday. These articles reflect the profound influence of his historic contributions to the areas of magnetism and magnetic materials, orbital physics, and to narrow-band electronic materials. Indeed, Goodenough’s contributions in these fields ultimately laid the foundation for current and next-generation technologies in communications, information storage and energy storage and transfer, advancing both science and society.

A solid with larger sound speeds exhibits higher lattice thermal conductivity (k_{lat}). Diamond is a prominent instance where its mean sound speed is 14400 m s-1 and k_{lat} is 2300 W m-1 K-1. Here, we report an extreme exception that CuP2 has quite large mean sound speeds of 4155 m s-1, comparable to GaAs, but the single crystals show a very low lattice thermal conductivity of about 4 W m-1 K-1 at room temperature, one order of magnitude smaller than GaAs. To understand such a puzzling thermal transport behavior, we have thoroughly investigated the atomic structure and lattice dynamics by combining neutron scattering techniques with first-principles simulations. Cu atoms form dimers sandwiched in between the layered P atomic networks and the dimers vibrate as a rattling mode with frequency around 11 meV. This mode is manifested to be remarkably anharmonic and strongly scatters acoustic phonons to achieve the low k_{lat}. Such a dimer rattling behavior in layered structures might offer an unprecedented strategy for suppressing thermal conduction without involving atomic disorder., four figures and one table in the main text

We report the nanoscale imaging of Ti-doped bilayer calcium ruthenates during the Mott metal-insulator transition by microwave impedance microscopy. Different from a typical first-order phase transition where coexistence of the two terminal phases takes place, a new metallic stripe phase oriented along the in-plane crystalline axes emerges inside both the G-type antiferromagnetic insulating state and paramagnetic metallic state. The effect of this electronic state can be observed in macroscopic measurements, allowing us to construct a phase diagram that takes into account the energetically competing phases. Our work provides a model approach to correlate the macroscopic properties and mesoscopic phase separation in complex oxide materials., 19 pages, 4 main figures, 6 Supplementary figures

Crystal structure prediction (CSP) methods recently proposed a series of new rare-earth (RE) hydrides at high pressures with novel crystal structures, unusual stoichiometries, and intriguing features such as high

Moving the heat aside with BAs Thermal management becomes increasingly important as we decrease device size and increase computing power. Engineering materials with high thermal conductivity, such as boron arsenide (BAs), is hard because it is essential to avoid defects and impurities during synthesis, which would stop heat flow. Three different research groups have synthesized BAs with a thermal conductivity around 1000 watts per meter-kelvin: Kang et al. , Li et al. , and Tian et al. succeeded in synthesizing high-purity BAs with conductivities half that of diamond but more than double that of conventional metals (see the Perspective by Dames). The advance validates the search for high-thermal-conductivity materials and provides a new material that may be more easily integrated into semiconducting devices. Science , this issue p. 575 , p. 579 , p. 582 ; see also p. 549

Perovskite oxides hosting ferroelectricity are particularly important materials for modern technologies. The ferroelectric transition in the well-known oxides BaTiO3 and PbTiO3 is realized by softening of a vibration mode in the cubic perovskite structure. For most perovskite oxides, octahedral-site tilting systems are developed to accommodate the bonding mismatch due to a geometric tolerance factor t = (A–O)/[√2(B–O)] < 1. In the absence of cations having lone-pair electrons, e.g., Bi3+ and Pb2+, all simple and complex A-site and B-site ordered perovskite oxides with a t < 1 show a variety of tilting systems, and none of them become ferroelectric. The ferroelectric CaMnTi2O6 oxide is, up to now, the only one that breaks this rule. It exhibits a columnar A-site ordering with a pronounced octahedral-site tilting and yet becomes ferroelectric at Tc ≈ 650 K. Most importantly, the ferroelectricity at T < Tc is caused by an order–disorder transition instead of a displacive transition; this character may be use...

The elements’ electronic configurations help explain why the rare earths are key ingredients in dozens of technological products—cell phones, computer hard drives, and lasers among them.

Accurate determination of the intrinsic electronic structure of thermoelectric materials is a prerequisite for utilizing an electronic band engineering strategy to improve their thermoelectric performance. Herein, with high‐resolution angle‐resolved photoemission spectroscopy (ARPES), the intrinsic electronic structure of the 3D half‐Heusler thermoelectric material ZrNiSn is revealed. An unexpectedly large intrinsic bandgap is directly observed by ARPES and is further confirmed by electrical and optical measurements and first‐principles calculations. Moreover, a large anisotropic conduction band with an anisotropic factor of 6 is identified by ARPES and attributed to be one of the most important reasons leading to the high thermoelectric performance of ZrNiSn. These successful findings rely on the grown high‐quality single crystals, which have fewer Ni interstitial defects and negligible in‐gap states on the electronic structure. This work demonstrates a realistic paradigm to investigate the electronic structure of 3D solid materials by using ARPES and provides new insights into the intrinsic electronic structure of the half‐Heusler system benefiting further optimization of thermoelectric performance., Herein, the intrinsic electronic structure of archetypical 3D ZrNiSn half‐Heusler compound is resolved using angle‐resolved photoemission spectroscopy. Unexpectedly large intrinsic bandgap and anisotropic conduction characteristics are directly revealed. These results provide new insights into the origin of high power factor of half‐Heuslers and offer a new strategy to further optimize their thermoelectric properties.

Hydrogen-rich superhydrides are believed to be very promising high-Tc superconductors. Recent experiments discovered superhydrides at very high pressures, e.g. FeH5 at 130 GPa and LaH10 at 170 GPa. With the motivation of discovering new hydrogen-rich high-Tc superconductors at lowest possible pressure, here we report the prediction and experimental synthesis of cerium superhydride CeH9 at 80–100 GPa in the laser-heated diamond anvil cell coupled with synchrotron X-ray diffraction. Ab initio calculations were carried out to evaluate the detailed chemistry of the Ce-H system and to understand the structure, stability and superconductivity of CeH9. CeH9 crystallizes in a P63/mmc clathrate structure with a very dense 3-dimensional atomic hydrogen sublattice at 100 GPa. These findings shed a significant light on the search for superhydrides in close similarity with atomic hydrogen within a feasible pressure range. Discovery of superhydride CeH9 provides a practical platform to further investigate and understand conventional superconductivity in hydrogen rich superhydrides., Hydrogen-rich superhydrides are promising high-temperature superconductors which have been observed only at pressures above 170 GPa. Here the authors show that CeH9 can be synthesized at 80-100 GPa with laser heating, and is characterized by a clathrate structure with a dense 3-dimensional atomic hydrogen sublattice.

We study the effect of hydrostatic pressure on the electrical transport, magnetic, and structural properties of $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}$ by measuring its resistivity, Hall effect, and x-ray diffraction under pressures up to 12.8 GPa supplemented by the first-principles calculations. At ambient pressure, $\mathrm{MnB}{\mathrm{i}}_{2}\mathrm{T}{\mathrm{e}}_{4}$ shows a metallic conducting behavior with a cusplike anomaly at around ${T}_{\mathrm{N}}\ensuremath{\approx}24\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, where it undergoes a long-range antiferromagnetic (AF) transition. With increasing pressure, ${T}_{\mathrm{N}}$ determined from the resistivity anomaly first increases slightly with a maximum at around 2 GPa and then decreases until vanishing completely at about 7 GPa. Intriguingly, its resistivity is enhanced gradually by pressure and even evolves from metallic to semimetal or semiconductinglike behavior as ${T}_{\mathrm{N}}$ is suppressed. However, the density of the $n$-type charge carrier that remains dominant under pressure increases with pressure. In addition, the interlayer AF coupling seems to be strengthened under compression, since the critical field ${H}_{\mathrm{c}1}$ for the spin-flop transition to the canted AF state is found to increase with pressure. No structural transition was evidenced up to 12.8 GPa, but some lattice softening was observed at about 2 GPa, signaling the occurrence of an electronic transition or crossover from a localized to itinerant state. We have rationalized these experimental findings by considering the pressure-induced enhancement of antiferromagnetic/ferromagnetic competition and partial delocalization of $\mathrm{Mn}\text{\ensuremath{-}}3d$ electrons, which not only destroys long-range AF order but also promotes charge-carrier localization through enhanced spin fluctuations and/or the formation of a hybridization gap at high pressure.

Great progress has been achieved in the research field of topological states of matter during the past decade. Recently, a quasi–1-dimensional bismuth bromide, Bi(4)Br(4), has been predicted to be a rotational symmetry-protected topological crystalline insulator; it would also exhibit more exotic topological properties under pressure. Here, we report a thorough study of phase transitions and superconductivity in a quasihydrostatically pressurized α-Bi(4)Br(4) crystal by performing detailed measurements of electrical resistance, alternating current magnetic susceptibility, and in situ high-pressure single-crystal X-ray diffraction together with first principles calculations. We find a pressure-induced insulator–metal transition between ∼3.0 and 3.8 GPa where valence and conduction bands cross the Fermi level to form a set of small pockets of holes and electrons. With further increase of pressure, 2 superconductive transitions emerge. One shows a sharp resistance drop to 0 near 6.8 K at 3.8 GPa; the transition temperature gradually lowers with increasing pressure and completely vanishes above 12.0 GPa. Another transition sets in around 9.0 K at 5.5 GPa and persists up to the highest pressure of 45.0 GPa studied in this work. Intriguingly, we find that the first superconducting phase might coexist with a nontrivial rotational symmetry-protected topology in the pressure range of ∼3.8 to 4.3 GPa; the second one is associated with a structural phase transition from monoclinic C2/m to triclinic P-1 symmetry.

Small separation of surface oxygen enhances surface peroxide formation for greater oxygen evolution activity., We investigated the roles of covalent bonding, separation of surface oxygen, and electrolyte pH on the oxygen evolution reaction (OER) on transition metal oxides by comparing catalytic onset potentials and activities of CaCoO3 and SrCoO3. Both cubic, metallic perovskites have similar CoIV intermediate spin states and onset potentials, but a substantially smaller lattice parameter and shorter surface oxygen separation make CaCoO3 a more stable catalyst with increased OER activity. The onset potentials are similar, occurring where H+ is removed from surface -OH−, but two competing surface reactions determine the catalytic activity. In one, the surface -O− is attacked by electrolyte OH− to form the surface -OOH−; in the other, two -O− form a surface peroxide ion and an oxygen vacancy with electrolyte OH− attacking the oxygen vacancy. The second pathway can be faster if the surface oxygen separation is smaller.

Extrinsic spinon scattering by defects and phonons instead of intrinsic spinon-spinon coupling is responsible for resistive magnetic heat transport in one-dimensional (1D) quantum magnets. Here we report an investigation of the elusive extrinsic effect in the 1D Heisenberg $S=1/2$ spin chain compound ${\mathrm{Ca}}_{2}{\mathrm{CuO}}_{3}$, where the defect concentration is determined from the measured specific heat and first-principles calculations are used to separate the lattice component of the measured thermal conductivity to isolate a large magnetic contribution (${\ensuremath{\kappa}}_{m}$). The obtained temperature-dependent spinon-defect and spinon-phonon mean free paths can enable a quantitative understanding of both ${\ensuremath{\kappa}}_{m}$ and the spinon-induced spin Seebeck effect.

Because of their weak interlayer bonding, van der Waals (vdW) solids are very sensitive to external stimuli such as strain. Experimental studies of strain tuning of thermal properties in vdW solids have not yet been reported. Under $\ensuremath{\sim}9%$ cross-plane compressive strain created by hydrostatic pressure in a diamond anvil cell, we observed an increase of cross-plane thermal conductivity in bulk ${\mathrm{MoS}}_{2}$ from 3.5 to about $25\text{ }\text{ }\mathrm{W}\text{ }{\mathrm{m}}^{\ensuremath{-}1}\text{ }{\mathrm{K}}^{\ensuremath{-}1}$, measured with a picosecond transient thermoreflectance technique. First-principles calculations and coherent phonon spectroscopy experiments reveal that this drastic change arises from the strain-enhanced interlayer interaction, heavily modified phonon dispersions, and decrease in phonon lifetimes due to the unbundling effect along the cross-plane direction. The contribution from the change of electronic thermal conductivity is negligible. Our results suggest possible parallel tuning of structural, thermal, and electrical properties of vdW solids with strain in multiphysics devices.

Extrinsic spinon scattering by defects and phonons instead of intrinsic spinon-spinon coupling is responsible for resistive magnetic heat transport in one-dimensional (1D) quantum magnets. Here we report an investigation of the elusive extrinsic effect in the 1D Heisenberg S=1/2 spin chain compound Ca_{2}CuO_{3}, where the defect concentration is determined from the measured specific heat and first-principles calculations are used to separate the lattice component of the measured thermal conductivity to isolate a large magnetic contribution (κ_{m}). The obtained temperature-dependent spinon-defect and spinon-phonon mean free paths can enable a quantitative understanding of both κ_{m} and the spinon-induced spin Seebeck effect.

Recent measurements of an unusual high thermal conductivity of around 1000 W m-1 K-1 at room temperature in cubic boron arsenide (BAs) confirm predictions from theory and suggest potential applications of this semiconductor compound for thermal management applications. Knowledge of the thermal expansion coefficient and Gr\"uneisen parameter of a material contributes both to the fundamental understanding of its lattice anharmonicity and to assessing its utility as a thermal-management material. However, previous theoretical calculations of the thermal expansion coefficient and Gr\"uneisen parameter of BAs yield inconsistent results. Here we report the linear thermal expansion coefficient of BAs obtained from the X-ray diffraction measurements from 300 K to 773 K. The measurement results are in good agreement with our ab initio calculations that account for atomic interactions up to fifth nearest neighbours. With the measured thermal expansion coefficient and specific heat, a Gr\"uneisen parameter of BAs of 0.84 +/- 0.09 is obtained at 300 K, in excellent agreement with the value of 0.82 calculated from first principles and much lower than prior theoretical results. Our results confirm that BAs exhibits a better thermal expansion coefficient match with commonly used semiconductors than other high-thermal conductivity materials such as diamond and cubic boron nitride.

Mg2Si1−xSnx solid solutions are promising thermoelectric materials to be applied in vehicle waste-heat recovery. Their thermal stability issue, however, needs to be addressed before the materials can be applied in practical thermoelectric devices. In this work, we studied the crystal structure and chemical composition of Mg2Si1−xSnx in inert gas atmosphere up to 823 K. We found that the sample was oxidized even in high-purity inert gases. Although no obvious structural change has been found in the slightly oxidized sample, carrier concentration decreased significantly since oxidation creates Mg vacancies in the lattice. We demonstrated that an atomic-layer deposited Al2O3 coating can effectively protect Mg2Si1−xSnx from oxidation in inert gases and even in air. In addition, this Al2O3 thin film also provides in situ protection to the Sb-doped Mg2Si1−xSnx samples during the laser-flash measurement and therefore eliminates the measurement error that occurs in uncoated samples as a result of sample oxidation and graphite exfoliation issues.

We report the synthesis of silicon-doped hematite (Si:alpha-Fe2O3) single crystals via chemical vapor transport, with Si incorporation on the order of 1019 cm(-3). The conductivity, Seebeck and Hall effect were measured in the basal plane between 200 and 400 K. Distinct differences in electron transport were observed above and below the magnetic transition temperature of hematite at similar to 265 K (the Morin transition, T-M). Above 265 K, transport was found to agree with the adiabatic small-polaron model, the conductivity was characterized by an activation energy of similar to 100 meV and the Hall effect was dominated by the weak ferromagnetism of the material. A room temperature electron drift mobility of similar to 10(-2) cm(2) V-1 s(-1) was estimated. Below TM, the activation energy increased to similar to 160 meV and a conventional Hall coefficient could be determined. In this regime, the Hall coefficient was negative and the corresponding Hall mobility was temperature-independent with a value of similar to 10(-1) cm(2) V-1 s(-1). Seebeck coefficient measurements indicated that the silicon donors were fully ionized in the temperature range studied. Finally, we observed a broad infrared absorption upon doping and tentatively assign the feature at similar to 0.8 eV to photon-assisted small-polaron hops. These results are discussed in the context of existing hematite transport studies.

The cubic pyrochlore Dy2Pt2O7 was synthesized under 4 GPa and 1000 °C and its magnetic and thermodynamic properties were characterized by DC and AC magnetic susceptibility and specific heat down to 0.1 K. We found that Dy2Pt2O7 does not form long-range magnetic order, but displays characteristics of canonical spin ice such as Dy2Ti2O7, including (1) a large effective moment 9.64 μ B close to the theoretical value and a small positive Curie–Weiss temperature θ CW = +0.77 K signaling a dominant ferromagnetic interaction among the Ising spins; (2) a saturation moment ∼4.5 μ B being half of the total moment due to the local 〈111〉 Ising anisotropy; (3) thermally activated spin relaxation behaviors in the low (∼1 K) and high (∼20 K) temperature regions with different energy barriers and characteristic relaxation time; and most importantly, (4) the presence of a residual entropy close to Pauling’ estimation for water ice.

We report a thorough study of the transport properties of the normal and superconducting states of black phosphorus (BP) under magnetic field and high pressure with a large-volume apparatus that provides hydrostatic pressure to induce transitions from the layered A17 phase to the layered A7 phase and to the cubic phase of BP. Quantum oscillations can be observed at P ≥ 1 GPa in both resistivity and Hall voltage, and their evolutions with pressure in the A17 phase imply a continuous enlargement of Fermi surface. A significantly large magnetoresistance (MR) at low temperatures is observed in the A7 phase that becomes superconducting below a superconducting transition temperature T c ∼ 6–13 K. T c increases continuously with pressure on crossing the A7 to the cubic phase boundary. The strong MR effect can be fit by a modified Kohler’s rule. A correlation between T c and fitting parameters suggests that phonon-mediated interactions play dominant roles in driving the Cooper pairing, which is further supported by our density functional theory (DFT) calculations. The change of effective carrier mobility in the A17 phase under pressure derived from the MR effect is consistent with that obtained from the temperature dependence of the quantum oscillations. In situ single-crystal diffraction under high pressure indicates a total structural reconstruction instead of simple stretching of the A17 phase layers in the A17-to-A7-phase transition. This finding helps us to interpret transport properties on crossing the phase transition under high pressure.

The development of novel nano-oxide spintronic devices would benefit greatly from interfacing with emergent phenomena at oxide interfaces. In this paper, we integrate highly spin-split ferromagnetic semiconductor EuO onto perovskite SrTiO3 (001). A careful deposition of Eu metal by molecular beam epitaxy results in EuO growth via oxygen out-diffusion from SrTiO3. This in turn leaves behind a highly conductive interfacial layer through generation of oxygen vacancies. Below the Curie temperature of 70 K of EuO, this spin-polarized two-dimensional t 2g electron gas at the EuO/SrTiO3 interface displays very large positive linear magnetoresistance (MR). Soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) reveals the t 2g nature of the carriers. First principles calculations strongly suggest that Zeeman splitting, caused by proximity magnetism and oxygen vacancies in SrTiO3, is responsible for the MR. This system offers an as-yet-unexplored route to pursue proximity-induced effects in the oxide two-dimensional t 2g electron gas.

We study the resistive switching triggered by an applied electrical bias in the antiferromagnetic Mott insulator $\mathrm{S}{\mathrm{r}}_{3}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$. The switching was previously associated with an electric-field-driven structural transition. Here we use time-resolved measurements to probe the thermal activation behavior of the switching process and acquire information about the energy barrier associated with the transition. We quantify the changes in the energy-barrier height with respect to the applied bias and find a linear decrease of the barrier with increasing bias. Our observations support the potential of antiferromagnetic transition-metal oxides for spintronic applications.

Perovskite oxides hosting ferroelectricity are particularly important materials for modern technologies. The ferroelectric transition in the well-known oxides BaTiO

Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring.