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Organic–inorganic hybrid heterojunction solar cells have gained extensive attention due to the simple device structure and low‐cost technological processes, and n‐type silicon has been mainly used as the inorganic absorber in previous research. Herein, hybrid heterojunction solar cells based on p‐type silicon are successfully prepared through a low‐temperature solution method. A preliminary power conversion efficiency over 4% is observed, via optimizing the organic thin‐film deposition and organic/inorganic interface, which enhance the built‐in field and promote the separation of photogenerated carriers in the heterojunction. Therefore, a new idea and possibility are provided for developing low‐cost, high‐performance solar cells. [ABSTRACT FROM AUTHOR]

With the introduction of the concept of dopant‐free carrier‐selective contact for c‐Si photovoltaics, Si‐based heterojunction solar cells can greatly reduce production costs by optimizing the manufacturing process while maintaining high power conversion efficiency. Compared with processes that rely on complex vacuum equipment, low‐temperature solution processing has many advantages over conventional silicon solar cells. However, research on low‐cost and high‐efficiency solar cells based on p‐type crystalline silicon is relatively rare. From the point of view regards energy band matching, the inorganic metal oxide semiconductor material ZnO is well suited for low‐cost solution method studies due to its easy preparation, very high transmittance in the visible spectrum, low cost, and suitable energy levels matching p‐Si. Herein, ZnO is spin coated on the back of p‐Si to form a heterojunction, together with spin coating of PEDOT:PSS on the front side as the hole transport layer and passivation layer, a PEDOT:PSS/p‐Si/ZnO‐structured p‐Si‐based backcontact hybrid solar cell is successfully fabricated at low temperature (≤135 °C) via solution process with a PCE of 9.77% (Voc = 0.56 V, Jsc = 25.99 mA cm−2, fill factor = 67.10%). This work provides a promising approach for fabricating high‐performance and low‐cost silicon‐based heterojunction solar cells. [ABSTRACT FROM AUTHOR]

Organic polymer solid electrolytes show interesting application prospects in resistive switching memories and brain‐inspired computing ionic devices. However, polymer electrolytes can easily decompose under heat treatment and their ionic conductivity can vary significantly at different temperatures. Among the reported polymer memristors, most of them lack sufficient reproducibility, endurance, stability, uniformity, and inter alia heat tolerance. Based on a molecular group that is thermally stable over a large temperature range and a structure with polar bonds for assisted ion migration, herein, a new polymer memristor is demonstrated employing polyethyleneimine (PEI) as a solid electrolyte for the first time. Atomic switch memristors equipped with PEI solid polymer electrolyte exhibit stable resistive switching at room temperature and high temperatures with a good retention, large ON/OFF ratio of 105, and stable cycle performance within a temperature range from 25 to 150 °C. The memristors fabricated on a polyimide substrate exhibit excellent switching performance at 150 °C after 2000 bending cycles, illustrating the potential for flexible electronic applications. Structural analysis reveals that the excellent thermally stable switching performance is derived from the stability of the molecular chain and a lower Tg (glass transition temperature). [ABSTRACT FROM AUTHOR]