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MOCVD (Metal-organic Chemical Vapor Deposition) has been investigated extensively to achieve smooth and conformal deposition of GST (GeSbTe) films. The studies are focused on filling confined cells as well as improving material properties for high performance PCM (Phase Change Memory) applications. Our MOCVD process allows GST alloys to fill 15nm hole structures. By tailoring the MOCVD process and GST compositions, MOCVD GST alloys exhibit superior material properties compared to Ge 2 Sb 2 Te 5 PVD (Physical Vapor Deposition) alloys in terms of higher device speeds and lower reset currents. PCM devices made from optimized MOCVD GST alloys demonstrate set-speed of 12ns in ∼100nm size devices, which is more than 10X faster than the typical 150–200ns set-speed observed for devices of similar size made from benchmark PVD Ge 2 Sb 2 Te 5 alloys. PCM devices made from the 12ns high speed GST alloys by the MOCVD process also exhibit programming cycle endurances greater than 5×108 at a 20ns set time. In addition, devices made from MOCVD GST alloys can also be made to have ∼3X lower reset currents than devices made from PVD GST alloy of same compositions.

We have demonstrated conformal deposition of amorphous GeSbTe films in high aspect ratio structures by MOCVD. SEM analysis showed the as-deposited GeSbTe films had smooth morphologies and were well controlled for void free amorphous conformal deposition. GeSbTe films adhere well to SiO2, TiN, and TiAlN. The morphology and adhesion are stable in 420°C post process. By annealing at 365°C, amorphous GeSbTe films converted into crystalline GeSbTe with polycrystalline grain sizes of 5nm. Film resistivity in the crystalline phase ranged from 0.001 to 0.1 Ω-cm, suitable for device applications. Phase change devices fabricated with confined via structures filled with MOCVD GeSbTe showed cycle endurances up to 1×1010 with a dynamic set/rest resistance of two orders of magnitude.

Today’s e-Commerce systems are applying pressure on the manufacturing industry. Shorter lead times, smaller production runs, just-in-time inventory and build-to-order are all manufacturing operations’ nightmares. Worse, with ERP, CRM, APS and SCM, each application provides significant content but it is very difficult to make them all work together. The Manufacturing Execution System is the glue that turns all the pieces of the puzzle into one solid solution. Manufacturing Execution System accomplishes this by becoming the source of real-time production/fulfillment data and the central data source. Manufacturing Execution System applications effectively fall into the following areas: _ Enterprise system integration _ Production tracking w/genealogy _ Real-time Inventory Management _ Manufacturing operations management * (ERP - enterprise resource management, CRM - customer relationship management, APS - advanced planning and scheduling, SCM - supply chain management). Paper published with permission.

As part of the Defense Advanced Lithography Program (DALP), IBM has fabricated 0.35 micrometers high-density static random access memory (SRAM) chips with all critical levels being exposed using synchrotron X-ray lithography. X-ray exposures for the four critical levels (isolation, gate, contact holes, and metal 1) were performed at the Advanced Lithography Facility (ALF) at the IBM East Fishkill, New York site. Nonlithographic processing and noncritical level optical exposures were performed in the Very Large Scale Integration (VLSI) pilot line at the IBM Manassas, Virginia site. Extensive alignment and process latitude studies were conducted to determine the best operating points in preparation for the full product SRAM runs. Overlay error, dose and gap latitude, etch bias control, and electrical test results will be presented and compared to results obtained with optical lithography.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.