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During the ripening of litchi (Litchi chinensis Sonn.) fruit, anthocyanin biosynthesis is crucial in providing vibrant coloring. Previous studies on anthocyanin-related transcription factors have made significant discoveries relating to plants. However, the role of the SQUAMOSA promoter-binding protein-like (SPL) transcription factors in anthocyanin biosynthesis has rarely been studied in litchi. SPL genes are widely involved in the developmental mechanisms of plants. In this study, a total of 17 SPL genes have been identified from the litchi genome. Phylogenetic analysis revealed that these genes were divided into eight groups (Group I-VIII). Analysis of gene structure conserved domains, conserved motifs, and miR156 target prediction showed that LcSPLs were highly conserved during evolution. RNA-seq analysis of litchi revealed that six LcSPL genes have a role in regulating anthocyanin biosynthesis. Further, weighted correlation network analysis (WGCNA) revealed LcSPL7's role in anthocyanin synthesis and chlorophyll degradation in litchi fruit ripening. These findings collectively suggest that the LcSPL gene family plays an essential role in anthocyanin biosynthesis in litchi pericarp. In summary, comprehensive bioinformatics analysis of the SPL family expands our understanding of anthocyanin synthesis in litchi pericarp. [ABSTRACT FROM AUTHOR]

DNA segmentation methods were used to study which fragments of the human IFNγ gene possess enhancer activity. The human IFNγ gene was divided into 240-bp fragments, which were inserted between the GFP gene and the Alu tandem sequence to determine whether the inserted sequences eliminate the inhibition induced by the Alu tandem sequence. We found that five different 240-bp fragments (FUIFN3F3R, IFN4F4R, IFN6F6R, IFN21F21R, and IFN22F22R) and two 60-bp core sequences (IFN6-2F2R and IFN21-3-4F3-4R) derived from the IFNγ gene contain enhancers that can activate the GFP reporter gene. These enhancers may be targets of IFNγ gene expression regulation. Key words: human IFNγ gene, enhancer, core sequence. Les auteurs ont employe une approche de segmentation de l'ADN pour identifier les fragments du gene IFNγ humain qui possedent une activite d'amplificateur. Le gene IFNγ humain a ete divise en fragments de 240 pb, lesquels ont ete inseres entre le gene de la GFP et une sequence Alu en tandem pour determiner si la sequence inseree pouvait eliminer l'inhibition induite par la sequence Alu en tandem. Les auteurs ont trouve que cinq des fragments de 240 pb (FUIFN3F3R, IFN4F4R, IFN6F6R, IFN21F21R et IFN22F22R) ainsi que deux sequences centrales de 60 pb (IFN6-2F2R et IFN21-3-4F3-4R) derives du gene IFNγ contenaient des amplificateurs pouvant activer le gene rapporteur GFP. Ces amplificateurs sont possiblement des cibles de la regulation de l'expression du gene IFNγ. [Traduit par la Redaction] Mots-cles: gene IFNγ humain, amplificateur, sequence centrale., Introduction Interferon-gamma (IFNγ), or type II interferon, is a cytokine that is critical for tumor control and for innate and adaptive immunity against viral and intracellular bacterial infections (Schoenborn and [...]

Correlation of miR-21 and B-type natriuretic peptide (BNP) with pregnancy-induced hypertension (PIH) complicated with heart failure and the diagnostic value was investigated. Sixty patients with PIH complicated with heart failure admitted to Affiliated Hospital of Chengde Medical University from July 2016 to July 2017 were enrolled as the experimental group, and 35 normal pregnant women as the control group. Reverse transcription-quantitative polymerase chain reaction (RT-qPCR) method was used to determine the expression level of plasma miR-21 expression level. An automatic biochemical analyzer was used to determine plasma BNP expression level. Spearmans correlation analysis was used for the correlation analysis of miR-21 and BNP. ROC curve was used for evaluating the diagnostic values of miR-21 and BNP for PIH complicated with heart failure. miR-21 and BNP expression levels were higher in patients with PIH complicated with heart failure than those in the normal individuals, and were increased in line with the heart failure grade (P<0.001). The plasma miR-21 expression was positively correlated with BNP in patients with PIH complicated with heart failure (r=0.685, P<0.001). Both miR-21 and BNP had higher diagnostic values for PIH complicated with heart failure, in the diagnosis, the best cut-off value [odds ratio (OR)] of miR-21 was 1.113, with an area under curve (AUC) of 0.889 and a 95% confidence interval (CI) of 82.05–95.76%; the OR of BNP was 123, with an AUC of 0.747 and a 95% CI of 64.95–84.38%. Blood pressure, six-minute walk test (6MWT), left ventricular ejection fraction (LVEF) and left ventricular end diastolic diameter (LVEDD) were independent risk factors for the occurrence of PIH complicated with heart failure (P<0.05). In conclusion, miR-21 and BNP, highly expressed in patients with PIH complicated with heart failure, are expected to become important biomarkers for diagnosing PIH complicated with heart failure and judging the degree of heart failure in the patients, and worthy of clinical popularization and application. [ABSTRACT FROM AUTHOR]

(Bi1-xCex)2Ti2O7 thin films were grown on p-Si 〈100〉 substrates by chemical solution decomposition method. The relationship between the doping levels of cerium ions and the phase transition temperatures was studied. The doping of cerium ions could improve the phase stability of Bi2Ti2O7, and the reason was comprehensively explained by the charge compensating theory. The doping of Ce ions enhances the crystallization temperature, which make the crystallization difficult, so the amount of cerium ions should be kept appropriate. The dielectric properties of (Bi1-xCex)2Ti2O7 thin films with different X values at different temperatures and different doping levels were listed, and the latent variation tendency was found. When the annealing temperature was 650-700°C and X = 0.12 or 0.16, the thin films showed better dielectric properties than the others. [ABSTRACT FROM AUTHOR]

(Bi0.92Ce0.08)2Ti2O7 thin films have been successfully prepared on P-type Si(100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi2Ti2O7 was improved after Ce ions were doped. The dielectric constants of (Bi0.92Ce0.08)2Ti2O7 thin films annealed at 650° and 700°C were higher than that of Bi2Ti2O7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C–V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce-doped Bi2Ti2O7 thin films had potential for DRAM and MOS applications. [ABSTRACT FROM AUTHOR]

Abstract: Cerium-doped Bi2Ti2O7 (BCTO) thin films have been grown on P-type Si 〈100〉 substrates by a chemical solution deposition (CSD) method. X-ray diffraction (XRD) analysis was carried out, which confirms that the crystallinity of the films increased with the enhancement of annealing temperature ranging from 550 to 750°C. The chemical stability of Bi2Ti2O7 was improved, since some Bi ions are substituted with the Ce ions. The AFM image of surface morphology of (Bi0.88Ce0.12)2Ti2O7 thin film was investigated. The section morphology was studied and the thickness was measured. The relaxation time and the leakage current behavior of (Bi0.88Ce0.12)2Ti2O7 thin films annealed at various temperatures were discussed. The current–voltage characteristics were explored, accordingly dielectric constant (DC) and dielectric loss (DL) were calculated at the frequency ranging from 1 to 2000kHz. At the characteristic frequency of 100kHz, DC and DL are calculated to be 214 and 0.06 respectively. The results showed that the film annealed at 700°C had good insulating properties and was considered using in advanced MOS transistors. [Copyright &y& Elsevier]

Ce-doped Bi2Ti2O7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce-doped Bi2Ti2O7 was more stable than that of Bi2Ti2O7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce-doped Bi2Ti2O7 thin films could be used as storage capacitors in DRAM and MOS. [ABSTRACT FROM AUTHOR]