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This paper reports the improvement of electrical, ferroelectric and endurance of Hf0.5Zr0.5O2 (HZO) thin-film capacitors by implementing W electrode. The W/HZO/W capacitor shows excellent pristine 2Pr values of 45.1 μC/cm2 at ±6 V, which are much higher than those of TiN/HZO/W (34.4 μC/cm2) and W/HZO/TiN (26.9 μC/cm2) capacitors. Notably, the maximum initial 2Pr value of W/HZO/W capacitor can reach as high as 57.9 μC/cm2 at ±7.5 V. These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode, allowing for enhancement of o-phase formation. Moreover, the W/HZO/W capacitor also exhibits higher endurance, smaller wake-up effect (10.1%) and superior fatigue properties up to 1.5 × 1010cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors. Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor. These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation, reduces oxygen vacancies, mitigates wake-up effect and improves reliability.

As a high-k material, hafnium oxide (HfO2) has been used in gate dielectrics for decades. Since the discovery of polar phase in Si-doped HfO2 films, chemical doping has been widely demonstrated as an effective approach to stabilize the ferroelectric phase in HfO2 based thin films. However, the extra capping layer deposition, post-growth annealing and wake-up effect are usually required to arouse the ferroelectricity in HfO2 based thin films, resulting in the increase of complexity for sample synthesis and the impediment of device application. In this study, the ferroelectricity is observed in non-capped dopant-free HfO2 thin films prepared by pulsed laser deposition (PLD) without post-growth annealing. By adjusting the deposited temperature, oxygen pressure and thickness, the maximum polarization up to 14.7 μC/cm2 was obtained in 7.4 nm-thick film. The fraction of orthorhombic phase, concentrations of defects and size effects are considered as possible mechanisms for the influences of ferroelectric properties. This study indicates that PLD is an effective technique to fabricate high-quality ferroelectric HfO2 thin films in the absence of chemical doping, capping layer deposition and post-growth annealing, which may boost the process of nonvolatile memory device application.

Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable or better than those perovskite oxides will broaden their applications in microelectronic devices. In this work, to combine the merits of relaxor-ferroelectric and antiferroelectric, we experimentally demonstrate that a superparaelectric-like relaxor antiferroelectric behavior can be realized in the HfO2-based thin films and corresponding recoverable energy density over 100 J cm-3 can be achieved at efficiency higher than 80% as well as extremely high dielectric strength > 6 MV cm-1, compared to perovskite oxide materials. This is a record high energy density in all reported HfO2-based energy storage thin films, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO2-based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

The liquid-like thermoelectric materials have fascinated extensive attention in the field of waste heat recovery into useful energy. In this aspect, di-chalcogenides Cu2X were considered superionic thermoelectric materials due to their highly disordered degree of Cu-ion in the lattice, which realizes the ultralow thermal conductivity. However, their rigid sublattice can decently maintain the electrical performance, and thus make this group distinct from the other state-of-the-art thermoelectric materials. This review summarizes the well-designed strategies to realize the impressive performance in thermoelectric materials and their modules by linking the adopted approaches, with the moderate design of the device. Some recent reports are selected to outline the fundamentals, underlined challenges, outlooks, and future development of Cu2(S, Se, Te) liquid-like thermoelectric materials. We expect that this review will cover the needs of future researchers in choosing some potential materials to further explore thermoelectricity in other energy storage and efficient conversion technologies.

Dielectric capacitors are widely used in pulsed power electronic devices due to their ultrahigh power densities and extremely fast charge/discharge speed. To achieve enhanced energy storage density, maximum polarization (Pmax) and breakdown strength (Eb) need to be improved simultaneously. However, these two key parameters are inversely correlated. In this study, order–disorder transition induced polar nanoregions have been achieved in PbZrO3 thin films by making use of the low-energy ion implantation, enabling us to overcome the trade-off between high polarizability and breakdown strength, which leads to the tripling of the energy storage density from 20.5 to 62.3 J/cm3 as well as the great enhancement of breakdown strength. This approach could be extended to other dielectric oxides to improve the energy storage performance, providing a new pathway for tailoring the oxide functionalities.

The flexoelectric effect, which manifests itself as a strain-gradient-induced electrical polarization, has triggered great interest due to its ubiquitous existence in crystalline materials without the limitation of lattice symmetry. Here, we propose a flexoelectric photodetector based on a thin-film heterostructure. This prototypical device is demonstrated by epitaxial LaFeO3 thin films grown on LaAlO3 substrates. A giant strain gradient of the order of 106/m is achieved in LaFeO3 thin films, giving rise to an obvious flexoelectric polarization and generating a significant photovoltaic effect in the LaFeO3-based heterostructures with nanosecond response under light illumination. This work not only demonstrates a novel self-powered photodetector different from the traditional interface-type structures, such as the p–n and Schottky junctions but also opens an avenue to design practical flexoelectric devices for nanoelectronics applications.

A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO2-based thin film. Here, vanadium oxide (VOx), a functional oxide exhibiting the insulator-metal transition, is used as a novel type of a capping layer for the Hf0.5Zr0.5O2 (HZO) thin film. It is demonstrated that the VOx capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively. Specifically, the HZO thin film with a VCL shows large remanent polarization (2Pr ≈36.9 μC/cm2), relatively small coercive field (Ec ≈1.09 MV/cm), high endurance (up to 109 cycles), and long retention (>105 seconds). The enhanced FE properties may be attributed to the VCL-induced stabilization of the FE o-phase and suppression of oxygen vacancies at the interface. Furthermore, the HZO thin film with a VCL exhibits a successive rightward shift of polarization-voltage (P-V) hysteresis loop as the temperature increases. This is well correlated with the insulator-metal transition in a VCL, which can modulate the interfacial built-in field and thus cause the P-V loop shift. It is therefore demonstrated that a VCL not only enhances the FE properties of HZO thin films but also provides a temperature degree of freedom to modulate the FE properties, which may open up a new pathway to develop HfO2-based FE memories with high performance and novel functionalities.

Flexoelectricity has been proven to be an effective way in tailoring a material’s properties. Here, we report the flexoelectricity-induced transport modulation to the two-dimensional electron gas a...

The introduction of plasmonic additives is a promising approach to boost the efficiency of the dye-sensitized solar cell (DSSC) since they may improve the light harvesting of a solar cell. Herein, ...

Understanding carboxyl-metal ligand interaction has great significance in analytical chemistry. Herein, we use resonant surface-enhanced Raman scattering (SERS) to probe the physiochemical interaction and conformation change in several metal ion-carboxyl coordination complex systems adsorbed on the surface of plasmonically resonant metal nanostructures. Our SERS results and density function theory calculations jointly reveal that low-valence metal ions (such as K

ZrTe2 is a candidate topological material from the layered two-dimensional transition-metal dichalcogenide family, and thus the material may show exotic electrical transport properties and may be p...

Plasmonic effects are an effective approach to improve the efficiency of organic photovoltaics (OPVs) by enhancing the light absorption of the devices. In this work, we design hollow and spectrally tunable Au nanorattles as nanophotonic inclusions to achieve plasmon-enhanced OPVs for the first time. Compared to conventional bulk structures, these hollow Au nanorattles exhibit stronger and broader plasmon resonances. Consequently, they can significantly enhance the performance of the nanorattle-embedded solar cells due to matchable absorption, plasmon resonance energy transfer and plasmonic near-field enhancement in the devices. More importantly, this technique is applicable to various types of OPVs by tuning the structure of the nanorattles. This work paves the way for using hollow plasmonic nanostructures with controllable optical properties in OPVs as an alternative approach to effectively enhance device performance.

All-inorganic lead halide perovskite quantum dots (PQDs) of CsPbBr3 were synthesized at room temperature via a facile solution-based procedure. The cubic phase structure of the synthesized PQDs was judiciously identified through examining high-resolution transmission electron microscopy (TEM) images, selected area electronic diffraction (SAED) patterns and scanning TEM images of the PQDs. Variable-temperature photoluminescence (PL) spectra of the CsPbBr3 PQDs randomly embedded into a frozen solid of methylbenzene were measured in the temperature range of 5-180 K. It is found that both the linewidth and peak position of the measured PL spectra are abnormally almost temperature independent in the temperature range of interest. Some competing mechanisms, such as a competition between the bandgap blue shift induced by thermal lattice expansion and red shift induced by thermal escaping of localized excitons, and a competition between lineshape broadening by phonon scattering and narrowing by thermal escaping of localized excitons, are proposed to interpret the phenomena. Good agreement between the theoretical fitting and the experimental data leads to a state-of-the-art understanding of the temperature-dependent luminescence of the CsPbBr3 PQDs in a solid matrix.

The synthesis of discrete nanostructures with a strong, persistent, stable plasmonic circular dichroism (PCD) signal is challenging. We report a seed-mediated growth approach to obtain discrete Au nanorods with high and stable chiroptical responses (c-Au NRs) in the visible to near-IR region. The morphology of the c-Au NRs was governed by the concentration of l- or d-cysteine used. The amino acids encapsulated within the discrete gold nanostructure enhance their PCD signal, attributed to coupling of dipoles of chiral molecules with the near-field induced optical activity at the hot spots inside the c-Au NRs. The stability of the PCD signal and biocompatibility of c-Au NRs was improved by coating with silica or protein corona. Discrete c-Au NR@SiO2 with Janus or core-shell configurations retained their PCD signal even in organic solvents. A side-by-side assembly of c-Au NRs induced by l-glutathione led to further PCD signal enhancement, with anisotropic g factors as high as 0.048.

In this work, in situ transmission electron microscopy study of the electrochemical sodiation and desodiation processes was performed in a nanobattery which consisted of a single MnO2 nanowire and different kinds of gel-electrolyte. It is found that after full sodiation, single crystalline MnO2 nanowire is transformed to a mixed nanocrystalline phases of Na2O and MnO, and the following cycles are controlled by the reversible conversion reaction between NaMnO2 and MnO. Both in situ electrochemical test and ex situ battery test show that the glyme-based gel-electrolyte is more suitable for the MnO2 nanowires anode materials. It is also revealed that the MnO2 nanowire expansion ratio strongly depends on the diameter of the nanowires. This work provides a new insight on the sodiation/desodiation mechanism in MnO2 nanowire and gel-electrolyte, and may pave the path for the development of practical sodium-ion batteries with gel-electrolyte.

Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniaturized thermoelectric device applications. In this work, we demonstrate a mechanism to enhance thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW cm^(-1) K^(-2) at 20 K and 4800 μW cm^(-1) K^(-2) at room temperature. Interfacial reaction induced degradation of Ti cations valence number from Ti4+ to Ti3+ is attributed to be responsible for the formation of the quasi-two-dimensional electrons at the interface which results in very large Seebeck coefficient; and the enhanced electrical conductivity is suggested to be originated from the charge transfer induced doping in the ZrTe2. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 15 at 300 K. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.

Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniatured thermoelectric device applications. In this work, we demonstrate a mechanism and device performance of enhanced thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW/cmK^2 at 20 K and 4800 μW/cmK^2 at room temperature. Formation of quasi-two-dimensional electrons gas at the interface is attributed to the giant Seebeck coefficient, and enhanced electrical conductivity is suggested to be originated from charge transfer induced doping in the ZrTe2, which leads to extremely large thermoelectric power factor. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 1.5 at 300 K. This high thermoelectric figure of merit is demonstrated by a prototype device based on this heterostructure which results in 3K temperature cooling by passing through a current of 100 mA. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.

Log-periodic quantum oscillations discovered in transition-metal pentatelluride give a clear demonstration of discrete scale invariance (DSI) in solid-state materials. The peculiar phenomenon is convincingly interpreted as the presence of two-body quasi-bound states in a Coulomb potential. However, the modifications of the Coulomb interactions in many-body systems having a Dirac-like spectrum are not fully understood. Here, we report the observation of tunable log-periodic oscillations and DSI in ZrTe5 and HfTe5 flakes. By reducing the flakes thickness, the characteristic scale factor is tuned to a much smaller value due to the reduction of the vacuum polarization effect. The decreasing of the scale factor demonstrates the many-body effect on the DSI, which has rarely been discussed hitherto. Furthermore, the cut-offs of oscillations are quantitatively explained by considering the Thomas-Fermi screening effect. Our work clarifies the many-body effect on DSI and paves a way to tune the DSI in quantum materials., Accepted by npj Quantum Materials

A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO

Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe

The introduction of plasmonic additives is a promising approach to boost the efficiency of the dye-sensitized solar cell (DSSC) since they may improve the light harvesting of a solar cell. Herein, we design broadband and strong plasmonic absorption Au@Ag@SiO

All-inorganic lead halide perovskite quantum dots (PQDs) of CsPbBr

Carbon nanodots (CDs), a new star in the carbon nanomaterials family, have been demonstrated to show strong luminescence, and can meet the needs of large-scale production for biological and medical applications due to their low toxicity and biocompatibility. However, their luminescence mechanisms, such as color tuning and strong excitation-dependent luminescence, are still unclear. Herein, we present a state-of-the-art understanding and manipulating luminescence in CDs by changing their environmental states and using multiple spectroscopic methods as well as the first-principles theoretical calculations. Our study reveals that the edge-carbon atoms and incorporated nitrogen atoms play critical roles in the luminescence mechanisms of CDs, and thus paves the way for manipulation of luminescence in CDs.

Chiral cysteine-directed assemblies of Au@Ag core-shell nanocrystals (CSNCs) and Au/Ag nanorods with end-to-end (ETE) and side-by-side (SBS) configurations are fabricated and used to explore the definitive factors affecting the chiral response. The interaction between cysteine and metallic nanoparticles leads to intense and widely tunable plasmonic circular dichroism (PCD) ranging from a near-infrared (NIR) to ultraviolet (UV) regime. More importantly, it was observed that, in Ag nanorod and CSNC samples with varied aspect ratios, the ETE assembled patterns exhibit much larger PCD enhancement than SBS assemblies in an l/d-cysteine solvent environment. Very surprisingly, such a giant PCD response in these assemblies is completely different from that of the Au nanorod assembly case as reported earlier. Experimental and theoretical studies reveal that the interplay between the local field enhancement and backaction, triggered by the geometric configuration differentia of covered achiral CTAB molecules on Ag and Au surfaces, plays a crucial role in chiral response variances and leads to geometry-dependent optical activities. This work not only sheds light on understanding the relationship between the configuration of plasmonic nanostructure assemblies and geometry-manipulated circular dichroism, but also paves the way for predictive design of plasmonic biosensors or other nanodevices with controllable optical activities from the UV to the NIR light range.

Colossal permittivity (CP) materials have shown great technological potential for advanced microelectronics and high-energy-density storage applications. However, developing high performance CP materials has been met with limited success because of low breakdown electric field and large dielectric loss. Here, composite films have been developed based on surface hydroxylated ceramic fillers, (Er + Nb) co-doped TiO2 embedded in poly(vinylidene fluoride trifluoroethylene) matrix by a simple technique. We report on simultaneously observing a large dielectric constant up to 300, exceptional low dielectric loss down to 0.04 in the low frequency range, and an acceptable breakdown electric field of 813 kV cm−1 in the composites. Consequently, this work may pave the way for developing highly stable and superior dielectrics through a simple and scalable route to meet requirements of further miniaturization in microelectronic and energy-storage devices.

Two-dimensional electron gas (2DEG) in SrTiO3 (STO)-based heterostructures has been a subject of intense scientific interest in recent years. In this work, the metallic transition metal dichalcogenides ZrTe2 was grown on STO by pulsed laser deposition and AlN was subsequently deposited as a protection layer. The high-resolution transmission electron microscopy and electron energy loss spectroscopy results demonstrated the system as a multilayer structure of AlN/ZrTe2/ZrO2/STO due to interface redox reactions and implied a conductive STO surface. The remarkable Shubnikov–de Haas oscillations detected by angular dependent magnetotransport measurements reveal clear evidence of a high mobility quasi-2DEG in the STO-based interface. Moreover, evidence for extra carriers with three-dimensional features is observed implying the multiband contributions, which provide an explanation for some anomalous behavior in STO-based heterostructures. In addition, the thickness dependence study suggests the charge transfer effect between the capping metallic topological material ZrTe2 and the interfacial 2DEG. This work provides insight into the intrinsic electronic structure of STO-based heterostructures, and the integrated systems can serve as a platform for studying the interplay of the 2DEG with attractive materials as well as developing practical device applications.

Matching layer is a critical component that determines the performance of piezoelectric ultrasound transducer. For most piezoelectric materials, their acoustic impedances are significantly higher than human tissues and organs, so a tunable matching layer with a high acoustic impedance is required for optimizing the acoustic wave transmission. In this article, a high compression fabrication method is presented, with which the acoustic impedance of alumina-epoxy composite matching layer can be tuned from 6.50 to 9.47 MRayl by controlling the applied compression pressure and ratio of the components. The maximum acoustic impedance 9.47 MRayl can be achieved by compressing a mixture of 80% alumina weight ratio under a 62.4 MPa pressure. This enhancement mainly relies on the increased acoustic longitudinal velocity which enlarged the tolerance of high to ultra-high frequency transducer fabrication using quarter wavelength matching design. Furthermore, the attenuation of the matching layer developed by this method is only −10 dB/mm at 40 MHz. The very high acoustic impedance value and very low attenuation make this matching material superior than all reported matching materials, and therefore, can enhance the performance of the ultrasound transducers, especially for medical imaging applications.

We investigated the tunability of the transport and magnetic properties in 7.5 nm La 0.7 Sr 0.3 MnO 3 (LSMO) epitaxial films in a field effect geometry with the ferroelectric copolymer P(VDF-TrFE) as the gate insulator. Two different switching behaviors were observed upon application of gate voltages with either high or low magnitudes. The application of single voltage pulses of alternating polarity with an amplitude high enough to switch the remanent polarization of the ferroelectric copolymer led to a 15% change of the resistance of the LSMO channel at temperature 300 K (but less than 1% change at 20 K). A minimal shift of the peak in the resistance-temperature plot was observed, implying that the Curie temperature T C of the manganite layer is not changed. Alternatively, the application of a chain of low voltage pulses was found to shift T C by more than 16 K, and a change of the channel resistance by a 45% was obtained. We attribute this effect to the field-assisted injection and removal of oxygen vacancies in the LSMO layer, which can occur across the thickness of the oxide film. By controlling the oxygen migration, the low-field switching route offers a simple method for modulating the electric and magnetic properties of manganite films.

Fundamental insights into the function of the neural circuits often follows from the advances in methodologies and tools for neuroscience. Electrode- and optical- based stimulation methods have been used widely for neuro-modulation with high resolution. However, they are suffering from inherent invasive surgical procedure. Ultrasound has been proved as a promising technology for neuro-stimulation in a non-invasive manner. However, no portable ultrasound system has been developed particularly for neuro-stimulation. The utilities used currently are assembled by traditional functional generator, power amplifier, and general transducer, therefore, resulting in lack of flexibility. This paper presents a portable system to achieve ultrasonic neuro-stimulation to satisfy various studies. The system incorporated a high voltage waveform generator and a matching circuit that were optimized for neuro-stimulation. A new switching mode power amplifier was designed and fabricated. The noise generated by the power amplifier was reduced (about 30 dB), and the size and weight were smaller in contrast with commercial equipment. In addition, a miniaturized ultrasound transducer was fabricated using Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) 1–3 composite single crystal for the improved ultrasonic performance. The spatial peak temporal average pressure was higher than 250 kPa in the range of 0.5–5 MHz. In vitro and in vivo studies were conducted to show the performance of the system.

SnSe single crystals have been demonstrated to possess excellent thermoelectric properties. In this work, we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pulsed-laser deposition approach. Structural characterization reveals that the SnSe film deposited at a normal angle has a preferred orientation along a axis, while by contrast, the SnSe film deposited at an 80° glancing angle develops a nanopillar structure with the growth direction towards the incident atomic flux. The glancing angle deposition greatly reduces the grain size of the thin film due to a shadowing effect to the adatoms, resulting in significantly increased power factor for more than 100%. The maximum Seebeck coefficient and power factor are 498.5 μ V / K and 18.5 μ W c m − 1 K − 2 , respectively. The enhancement of thermoelectric property can be attributed to the potential barrier scattering at grain boundaries owing to the reduced grain size and increased grain boundaries in the film. Given this enhanced power factor, and considering the fact that the nanopillar structure should have much lower thermal conductivity than a plain film, the zT value of such made SnSe film could be significantly larger than the corresponding single crystal film, making it a good candidate for thin film-based thermoelectric device.

Enhancing the low-energy sunlight harvesting is of great importance for improving the efficiency of organic-inorganic halide perovskite solar cells (PSCs) but still remains a big challenge. Herein, we propose an improved light harvesting and management strategy by using rationally-designed Au@Ag core-shell nanocuboids as plasmonic inclusions, aiming at achieving panchromatic thin PSCs. Compared to conventional metal nanostructures with a single narrow plasmon resonance band, the Au@Ag nanocuboids exhibit multiple broader and stronger plasmon resonances that can be tuned by adjusting structural dimensions to spectrally match the absorption band of the perovskite, particularly in its weak absorption region. By carefully tailoring the location of the Au@Ag nanocuboids in the electrodes, both plasmonic near-field enhancement and increased light-scattering effects can be fully exploited to boost up the performance of the PSCs. As a result, the hybrid devices demonstrate high photon-to-electron conversion efficiency (IPCE) over the entire visible range, with a remarkable IPCE enhancement (ΔIPCE/IPCE) of 20–60% in the range of 550–750 nm, compared with pristine devices. This also leads to an average power conversion efficiency (PCE) of 17.83% for the optimized Au@Ag incorporated cells, with a champion PCE of 18.31% recorded for the best plasmonic PSC, corresponding to a PCE enhancement of 20.8%.

Binary ferroelectric materials such as hafnium oxide have been intensively studied, which are expected to exhibit robust ferroelectricity comparable to the perovskite-based ferroelectrics at nanoscale. Here, using the combination of X-ray diffraction (XRD) associate with Transmission Electron Microscope (TEM), we reveal the epitaxial growth of Al-doped HfO2 possessing various phase structures on different oriented SrTiO3 substrates. The well-oriented films show different ferroelectricity indicated by piezoresponse force microscopy (PFM). The film grown on the (111) SrTiO3 substrate shows the largest electromechanical effect. These results, with the analyses of structural characterizations, demonstrate the orientation control of phase transitions and ferroelectricity in Al-doped HfO2 thin films.

By adoption of a high permittivity ZrO2 capping layer (ZOCL), enhanced ferroelectric properties were achieved in the Hf0.5Zr0.5O2 (HZO) thin films. For HZO thin film with 10 Å ZOCL, the 2P r value can reach as high as ∼43.1 μC cm−2 under a sweep electric field of 3 MV cm−1. In addition, a reduced coercive field of 1.5 MV cm−1 was observed, which is comparable to that of HZO with metallic CL. Furthermore, the homogeneity of ferroelectric orthorhombic phase in HZO films was observed to be clearly increased, as evidenced by nanoscale piezoelectric force microscopy measurements. These results demonstrate that ZOCL is very favorable for high performance ferroelectric HZO films and their future device applications.

Photo-enhanced flexoelectricity or flexoelectricity-enhanced photovoltaic effect, named photo-flexoelectric, is an interesting topic and has application potential in photo-electro-mechanical devices. However, this effect is far from being well understood. In this work, we demonstrate the photoflexoelectric effect in perovskite-structured SrTiO3 (STO) single crystal and reveal the coupling mechanism between its photovoltaic and flexoelectric effect. Driven by the flexoelectric field, light-induced electrons can tunnel through the Schottky junction at the Au/STO interface, giving rise to enhanced flexoelectricity, i.e., photoflexoelectric effect. Thermal annealing in vacuum induces oxygen vacancies in STO and results in stronger light absorption and enlarged photoflexoelectric effect.

Our previous work demonstrated that Cr2Ge2Te6 based compounds with a layered structure and high symmetry are good candidates for thermoelectric application. However, the power factor of only ∼0.23 mW/mK2 in undoped material is much lower than that of conventional thermoelectrics. This indicates the importance of an electronic performance optimization for further improvements. In this work, either Mn- or Fe-substitution on the Cr site is investigated, with expectations of both carrier concentration control and band structure engineering. First-principle calculations indicate that an orbital hybridization between d orbitals of the doping atom and the p orbital of Te significantly increases the density of states (DOS) around the Fermi level. In addition, it is found that Mn doping is more favorable to improve the electrical properties than Fe doping. By tuning the carrier concentration via Mn doping, the peak power factor rises rapidly from 0.23 mW/mK2 to 0.57 mW/mK2 at 830 K with x = 0.05. Combined with the...

The roles of oxygen gas in crystal orientation, surface morphology and electrical resistivity of Pt thin films grown on MgO(001) substrate by magnetron sputtering are studied. With a well-controlled oxygen ratio (15% oxygen) during sputtering deposition with Ar-O2 mixture ambient, (001) epitaxial growth of Pt film on MgO substrate is achieved with an epitaxial orientation relationship of (001)Pt//(001)MgO and [100]Pt//[100]MgO. Microstructural and electrical characterizations reveal that the (001) Pt thin films possess very smooth surface and good conductivity. The formation and subsequent decomposition of platinum oxides in the Pt films grown with more than 30% oxygen result in an increase of surface roughness and electrical resistivity. The high-quality Pt(001) film has large potential for integrated electronic device applications.

Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO2/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results.