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Dopant profiles near the semiconductor–oxide interface are critical for microelectronic device performance. As the incorporation of Si1−xGex into transistors continues to increase, it is necessary to understand the behavior of dopants in Si1−xGex. In this paper, the diffusion and electrical activation of phosphorus within a strained, single-crystal Si0.7Ge0.3 layer on Si during oxidation are reported. Both layers were uniformly doped, in situ, with an average phosphorus concentration of 4 × 1019 atoms/cm3. After high-temperature oxidation, secondary ion mass spectrometry measurements revealed that the bulk of the phosphorus diffuses out of only the SiGe layer and segregates at the oxidizing SiGe–SiO2 interface. Hall effect measurements corroborate the observed phosphorus loss and show that the phosphorus diffusing to the oxidizing interface is electrically inactive. Through density functional theory (DFT) calculations, it is shown that phosphorus interstitials prefer sites near the SiGe–SiO2 interface. Finally, based on a combination of experimental data and DFT calculations, we propose that the phosphorus atoms are displaced from their lattice sites by Ge interstitials that are generated during SiGe oxidation. The phosphorus atoms then migrate toward the SiGe–SiO2 interface through a novel mechanism of hopping between Ge sites as P–Ge split interstitials. Once they reach the interface, they are electrically inactive, potentially in the form of interstitial clusters or as part of the reconstructed interface or oxide. [ABSTRACT FROM AUTHOR]

The selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si+ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 1015 ions/cm2 1 MeV Si+ implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm3. Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments. [ABSTRACT FROM AUTHOR]

Dizocilpine maleate (MK-801) is one of several NMDA receptor antagonists that is widely used to pharmacologically model the symptoms of psychosis and schizophrenia in animals. MK-801 elicits behaviors in adult zebrafish (Danio rerio) that are phenotypically consistent with behaviors observed in humans and rodents exposed to the drug. However, the molecular and cellular processes that mediate the psychotomimetic, cognitive and locomotive behaviors of MK-801 are unclear. We exposed zebrafish larvae to MK-801 to assess their merit as a model organism to elucidate the behavioral effects of NMDA receptor blockade. Zebrafish larvae were acutely immersed in MK-801 to assess the effect on spontaneous swimming. MK-801 caused a time- and dose-dependent increase in larval swim speed, and the peak response (a five-fold increase in swim speed) was evoked by a three h exposure to a 20 uM dose. Zebrafish larvae did not exhibit sensitivity to the locomotor effectsof MK-801 until 5 dpf, suggesting a critical role for developmental in sensitivity to the drug. Exposure to the low potency NMDA antagonist, memantine, did not alter the swim speed of zebrafish larvae. Co-immersion in D 1 or D2 dopamine receptor antagonists did not disrupt the time course or magnitude of the increase in swim speed, suggesting dopaminergic signaling is not required for the locomotor actions of MK-801. Our findings of the behavioral actions of MK-801 in zebrafish larvae are consistent with previous observations in mammals and imply that the physiological, cellular and molecular processes disrupted by MK-801 are conserved in zebrafish larvae. These data suggest that the zebrafish larvae is a valid and useful model to elucidate neurobehavioral aspects of NMDA receptor antagonism and may provide insight to the neurobiology of psychosis and schizophrenia.

This work determines the phase stabilities and point defect energetics of TiSi2 and TiGe2 allotropes using density functional theory. The primary focus is on the C49 and C54 allotropes, which compete during TiSi2 phase formation. It is found that the ground state structure for TiGe2 is the C54 allotrope, desirable for its low sheet resistance, while the less desirable, higher resistance C49 allotrope forms the ground state structure of TiSi2. A first attempt to understand the Ge atom's role in lowering the enthalpy of formation for the C54 structure is made from the perspective of the extended Born model. Charge density differences, the density of states, and Bader charge analysis show that these systems are predominantly ionically bonded, with the Ge atoms introducing additional covalent bond stability for the C54 allotrope. It is known that higher temperatures favor C54 formation in TiSi2. Helmholtz free energy calculations for TiSi2 suggest that the vibrational free energy does not drive the system to the C54 phase. The formation energies of certain point defects within the C49 structure of TiSi2 are less than 1 eV, which is consistent with experiments that show high defect concentrations. Thus, the driving force for C54 formation at higher temperatures may be related to the high defect concentration in the C49 allotrope. [ABSTRACT FROM AUTHOR]

"Gedankensimulation" is a term adapted from Einstein's "thought experiments" to indicate mentally created simulations that can help conceptualize ideas. Presents seven examples of simulations that can be utilized to solve problems or illustrate concepts in probability and statistics. Problem contexts include games of chance, selecting defective parts, HIV testing, survey questioning, and courtroom evidence. (MDH)

This article shows that the temperature dependence of minority carrier lifetime in mercury cadmium telluride (HgCdTe) samples of differing dislocation densities can be accounted by including the dislocation contribution in addition to the contribution of well known radiative, auger, and Shockley-Read recombination mechanisms.

In this article the theory of Li and Jones is applied to End of Range (EOR) dislocation loops to model the nucleation and evolution of the loops. The model is verified with experimental data and accurately represents the nucleation, growth, and Ostwald ripening stages of dislocation loop evolution.

Etch pit studies and transmission electron microscopy were used to investigate dose and energy effects on postannealing defect formation in high energy phosphorous implanted silicon.

The results are presented of an investigation into the diffusion of implanted nitrogen in silicon.

The controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires via a two-step top-down process consisting of an inductively coupled plasma reactive ion etch followed by a hot, 85% H3PO4 crystallographic wet etch is explored. The vertical nanowires are oriented in the [ 0001 ] direction and are bound by sidewalls comprising of { 33 6 ÂŻ 2 } semipolar planes which are at a 12° angle from the [0001] axis. High temperature H3PO4 etching between 60 °C and 95 °C result in smooth semipolar faceting with no visible micro-faceting, whereas a 50 °C etch reveals a micro-faceted etch evolution. High-angle annular dark-field scanning transmission electron microscopy imaging confirms nanowire tip dimensions down to 8â€"12 nanometers. The activation energy associated with the etch process is 0.90 ± 0.09 eV, which is consistent with a reaction-rate limited dissolution process. The exposure of the { 33 6 ÂŻ 2 } type planes is consistent with etching barrier index calculations. The field emission properties of the nanowires were investigated via a nanoprobe in a scanning electron microscope as well as by a vacuum field emission electron microscope. The measurements show a gap size dependent turn-on voltage, with a maximum current of 33 nA and turn-on field of 1.92 V nmâˆ'1 for a 50 nm gap, and uniform emission across the array. [ABSTRACT FROM AUTHOR]

Studies involving boron, phosphorus and dislocation markers were conducted to compare transient enhanced diffusion (TED) effects which are due to implantation damage producing enhanced diffusion of dopants in silicon. Results indicated that phosphorus is enhanced substantially more than boron during damage annealing. Dislocation growth showed that a number of interstitials greater than the damage dose is captured during these anneals.