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To realize the potential of artificial intelligence in medical imaging, improvements in imaging capabilities are required, as well as advances in computing power and algorithms. Hybrid inorganic–organic metal halide perovskites, such as methylammonium lead triiodide (MAPbI3), offer strong X-ray absorption, high carrier mobilities (µ) and long carrier lifetimes (τ), and they are promising materials for use in X-ray imaging. However, their incorporation into pixelated sensing arrays remains challenging. Here we show that X-ray flat-panel detector arrays based on microcrystalline MAPbI3 can be created using a two-step manufacturing process. Our approach is based on the mechanical soft sintering of a freestanding absorber layer and the subsequent integration of this layer on a pixelated backplane. Freestanding microcrystalline MAPbI3 wafers exhibit a sensitivity of 9,300 µC Gyair–1 cm–2 with a μτ product of 4 × 10–4 cm2 V–1, and the resulting X-ray imaging detector, which has 508 pixels per inch, combines a high spatial resolution of 6 line pairs per millimetre with a low detection limit of 0.22 nGyair per frame.

The defined location of a stem cell within a niche regulates its fate, behavior, and molecular identity via a complex extrinsic regulation that is far from being fully elucidated. To explore the molecular characteristics and key components of the aortic microenvironment, where the first hematopoietic stem cells are generated during development, we performed genome-wide RNA tomography sequencing on zebrafish, chicken, mouse, and human embryos. The resulting anterior-posterior and dorsal-ventral transcriptional maps provided a powerful resource for exploring genes and regulatory pathways active in the aortic microenvironment. By performing interspecies comparative RNA sequencing analyses and functional assays, we explored the complexity of the aortic microenvironment landscape and the fine-tuning of various factors interacting to control hematopoietic stem cell generation, both in time and space in vivo, including the ligand-receptor couple ADM-RAMP2 and SVEP1. Understanding the regulatory function of the local environment will pave the way for improved stem cell production in vitro and clinical cell therapy.

We combine a low dark current and high-detectivity near-infrared (NIR)-sensitive organic photodetector with a high-resolution 508 pixels per inch (ppi) oxide thin-film transistor (TFT) backplane to create a large-area thin NIR detector, using processes that are compatible with flat-panel display fabrication. The detector is characterized showing high uniformity and linearity. With the use of a NIR light source, the detector is capable of imaging the (pattern of) veins under the skin in reflection, leading to improved biometric authentication.

We present large-area photodetector arrays in combination with a thin-film optical collimator for under-display fingerprint authentication in next-generation smartphones. The fabrication is compatible with flat panel display processes and based on an oxide TFT backplane with a printed organic photodiode frontplane. The functionality behind an AMOLED display is demonstrated.

Over the last decade, molecular characterization has resulted in many tumors previously classified as central nervous system primitive neuroectodermal tumors (CNS-PNETs) now being classified into their own distinct tumor types. These novel types are often characterized by very specific genomic aberrations. For instance, embryonal tumors with multilayered rosettes (ETMR) harbor amplifications of miRNA cluster C19MC or complex DICER1 mutations, while in CNS neuroblastoma with FOXR2 activation structural aberrations result in aberrant FOXR2 expression. Despite the presence of distinct oncodrivers, our understanding of these tumors is still limited. To elucidate tumor biology and to discover tumor specific treatments, we need to uncover how these oncodrivers contribute to tumorigenesis. However, a bottleneck in basic and translational research of these novel tumor types, is the lack of representative preclinical models, especially in vitro. To overcome this hurdle, we aim to mimic tumor development in genetically modified brain organoids. Human brain organoids derived from pluripotent stem cells are generated to represent either the developing forebrain or cerebellum. To mimic oncodriving events, DNA plasmids are introduced via electroporation into the proposed cell-of-origin populations to knockout tumor suppressor genes or overexpress oncogenes. By detecting fluorescent proteins encoded by the plasmids, electroporated cells are followed over time. Based on our preliminary data, for instance, overexpression of C19MC results in ectopic expansion of the electroporated cells. Ongoing histological and molecular characterizations, including (single cell) transcriptomic and epigenomic analyses, will reveal to which extend these organoid models resemble the specific human tumor types. Although further validation is required, these organoid models provide a novel avenue to study especially brain tumor types with distinct oncodriving events for which patient-derived models have not yet been established. They also allow for in-depth analyses of the potential cells of origin and the contribution of different mutations to tumor biology.

Four main medulloblastoma (MB) molecular subgroups are known, including the sonic hedgehog (SHH) subgroup, which represents ~25% of MB cases. The 5-year overall survival of SHH-MB is ~80%. However, survival between patients is highly diverse and dependent on the driver mutation(s) of the tumor. Patients with TP53 mutated tumors (often accompanied with MYCN and/or GLI2 amplifications) don’t respond well to current therapies and have a 10-year overall survival below 20%. Therefore, there is a need for new and more tailored therapies for these patients. In this study we aim to screen patient-derived organoid models of TP53-mutated SHH MB with a library of ~200 different compounds. We have optimized the cultures of two PDX-derived and one patient-derived organoid line in vitro. The lines will be screened in a high-throughput manner and the best hits and combinations will be validated in corresponding in vivo PDX models. To further assess the role of specific mutations in therapy outcome of TP53-mutated SHH MB, cerebellar organoids generated from human iPSCs were genetically modified with overexpression of dominant-negative P53 (DNP53) alone or in combination with MYCN and/or GLI2. Introduction of DNP53 and MYCN overexpression in cerebellar organoids at day 28/35 leads to the outgrowth of a Ki67-positive proliferating mass after three weeks, indicating tumor growth. Further analyses are ongoing to see how they match SHH-MB patient tumors. These genetically engineered organoid models may elucidate the role of specific mutations in therapy response and/or resistance. In addition, as tumors in these genetically engineered cerebellar organoids arise in a microenvironment of normal cerebellar cell types, initial safety of drugs on cerebellar cells can be assessed. In conclusion, different organoid models of TP53-mutated SHH MB will enable us to find more effective treatments and to better understand how to treat patients with different mutation combinations.

Background One of the bottlenecks in basic and translational research on pediatric brain tumors, is the lack of suitable and representative preclinical models to study tumor biology and drug sensitivity. Over the last decades, extensive molecular characterization has uncovered many entities and subgroups with their unique oncodriving events. However, this heterogeneity is currently not reflected in the models available, especially not for in vitro models. Objectives We aim to generate genetically engineered brain tumor organoids (GEBTO) to represent the molecular variety of embryonal brain tumors and ependymomas. Method Human brain organoids derived from embryonic stem cells are generated to represent the region of tumor origin. To mimic oncodriving events, DNA plasmids are introduced via electroporation in the organoid cells to knockout tumor suppressor genes or overexpress oncogenes. Results Cerebellar and cerebral forebrain organoids were generated as the tissue of origin for medulloblastoma and supratentorial ependymoma (ST-EPN), respectively. Based on the detection of GFP protein encoded by DNA plasmids, the organoid cells can be manipulated within a wide developmental window, which corresponds with the presence of the proposed cells of origin. Different oncodrivers and combinations thereof are now being tested to see whether they result in ectopic growth in cerebral or cerebellar organoids. When successful, the GEBTOs are histologically and molecularly characterized using (single cell) transcriptomic and epigenomic analyses to see how well they resemble human tumors. Discussion Although further development is required, GEBTOs provide a novel avenue to model especially rare pediatric brain tumors, for which tissue and therefore patient-derived models are limited. It also allows for in-depth analyses of the potential cells of origin and the contribution of different mutations to tumor biology.

We present a qHD (960 × 540 with three sub-pixels) top-emitting active-matrix organic light-emitting diode display with a 340-ppi resolution using a self-aligned IGZO thin-film transistor backplane on polyimide foil with a humidity barrier. The back plane process flow is based on a seven-layer photolithography process with a CD = 4 μm. We implement a 2T1C pixel engine and use a commercial source driver IC made for low-temperature polycrystalline silicon. By using an IGZO thin-film transistor and leveraging the extremely low off current, we can switch off the power to the source and gate driver while maintaining the image unchanged for several minutes. We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared with normal (continuous) operation. We show that with the further increase in resolution, the power saving through state retention will be even more significant.

During embryonic development, the first definitive hematopoietic stem cells (HSCs) are generated from hemogenic endothelial cells through an endothelial to hematopoietic transition (EHT) occurring in the main arteries of vertebrate embryos. HSCs then mature and expand during development prior to colonizing the adult hematopoietic niche. The complex and highly regulated process of HSC production is not fully understood yet. The journey of HSCs through their subsequent niches requires cell shape remodelling, attachment, division, migration and homing, all steps involving extensive cytoskeletal rearrangements. CLASP2 is a microtubule-associated protein that regulates microtubule dynamics by stabilizing the plus-end of microtubules. We have previously shown that Clasp2 knockout mice (Clasp2-/-) have an HSC defect in the bone marrow, resulting in severe pancytopenia. Our goal is now to investigate the role of CLASP2 in hematopoietic stem and progenitor cells (HSPCs) during embryonic development. We studied the role of CLASP2 on hematopoiesis by performing loss-of-function experiments in mouse and zebrafish embryos. Here, we show that CLASP2 ensures the proper dynamics of EHT and is involved in the maturation of HSC precursors into fully functional HSCs in the aorta. At later time points during embryogenesis, CLASP2 prevents the exhaustion of the blood cell pool by ensuring self-renewal of HSCs and by precluding their premature differentiation. Our data indicate that CLASP2 is involved in both, cellular fidelity during mitosis and protein formation at the post-translational level in the Golgi and/or their trafficking to the cell membrane, as exemplified for KIT. In conclusion, our data emphasize an earlier role of CLASP2 as an important and conserved regulator of HSC generation and expansion at multiple steps of hematopoiesis during mouse and zebrafish development.

In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In + Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.

An integrated scan-line driver, driving half a QQVGA flexible AMOLED display using amorphous-IGZO backplane technology on foil, has been designed and measured. A pulse-width modulation technique has been implemented, enabling to drive the OLEDs with a duty cycle up to almost 100%. The digital driving method also results in a 40% static power reduction of the display. Dynamic logic and bootstrapping techniques enabled the use of clock frequencies up to 300 kHz in unipolar amorphous-IGZO technologies on foil.

In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma enhanced chemical vapor deposition (PECVD) ESL based TFT, however significant differences were observed in gate bias-stress stabilities. The TFTs with mf-PVD ESL showed lower threshold-voltage (VTH) shifts compared to TFTs with PECVD ESL when stressed under a gate field of +/−1 MV/cm for duration of 104 seconds in dark and light conditions. We associate the better bias-stress stability of the mf-PVD ESL based TFT to better passivating properties and the low hydrogen content of the mf-PVD layer compared to PECVD layer.

A fast, 128-b implementation of both SRAM and LPROM with integrated periphery in a thin-film amorphous indium–gallium–zinc oxide technology is reported. The SRAM block can be read in 265 $\mu \text{s}$ /byte and written in 110 $\mu \text{s}$ /byte, consumes 12.3 mW, and has an area of 11.9 mm2. Furthermore, after power down, an SRAM memory state retention time of 83 s is shown. The LPROM can be read in 40 $\mu \text{s}$ /b, consumes 4.50 mW, and has an area of 3.75 mm2. The SRAM enables fast volatile RAM memory for thin-film microprocessors, while the LPROM can be used to store the identification code for state-of-the-art thin-film RFID tags.

We present a qHD (960x540 with 3 sub-pixels) top-emitting AMOLED display with 340ppi resolution using a self-aligned (SA) IGZO TFT backplane on polyimide-foil with humidity barrier. The back plane process flow is based on a 7 layer photolithography process with a CD=4um. We implement a 2T1C pixel engine and use commercial source driver IC made for LTPS. By using IGZO TFT and leveraging the extremely low off-current, we can switch-off the power to the source and gate driver while maintaining the image un-changed for several minutes. We demonstrate that, depending on the image content, low-refresh operation yields reduction in power consumption of up to 50% compared to normal (continuous) operation. We show that with further increase in resolution, the power saving through state retention will be even more significant.

Solution type metal-oxide semiconductor was processed on mass-production ready equipment and integrated in a backplane with ESL architecture TFTs. Excellent thickness uniformity of the semiconductor layer was obtained over the complete Gen1 glass substrate (320 mm x 352 mm), resulting in homogeneous TFT performance and bias stress reliability. An 85-ppi QVGA AMOLED display is demonstrated.

High permittivity (high-k) materials have received considerable attention as alternatives to SiO2 for CMOS and low-power flexible electronics applications. In this study, we have grown high-quality ZrO2 by using atmospheric-pressure plasma-enhanced spatial ALD (PE-sALD), which, compared to temporal ALD, offers higher effective deposition rates and uses atmospheric-pressure plasma to activate surface reactions at lower temperatures. We used tetrakis(ethylmethylamino)zirconium (TEMAZ) as precursor and O2 plasma as co-reactant at temperatures between 150 and 250◦C. Deposition rates as high as 0.17 nm/cycle were achieved with N- and C- contents as low as 0.4% and 1.5%, respectively. Growth rate, film crystallinity and impurity contents in the films were found to improve with increasing deposition temperature. The measured relative permittivity lying between 18 and 28 with leakage currents in the order of 5 × 10−8 A/cm2 demonstrates that atmospheric PE-sALD is a powerful technique to deposit ultrathin, high-quality dielectrics for low-temperature, large-scale microelectronic applications.

In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of 16.0cm2/(V.s), sub-threshold slope (SS -1) of 0.23V/decade and off-currents (IOFF)

Organic photodetectors (OPDs) have attracted much attention in recent years, due to their promise in large-area light sensing applications. Here, high-resolution slot-die-coated large-area bulk heterojunction organic photodiode (OPD) arrays are reported. The OPD uses a novel electron transport layer, indium gallium zinc oxide in combination with a molybdenum oxide top-electrode. Together, these effectively reduce dark current densities to very low levels of ≈10−7 mA cm−2 at −2 V. The OPDs show linear behavior in a wide range of light intensities and high detectivity values under reverse bias conditions. When coated on a 508 ppi TFT backplane, a high-quality optical fingerprint scanner capable of imaging in reflection is realized. The optical and electrical properties of the fingerprint sensor are characterized and high-resolution fingerprint images are obtained.

In this study, the authors report on high-quality amorphous indium-galliunv-zinc oxide thinfilm transistors (TFTs) based on a single-source dual-layer concept processed at temperatures down to ISCC. The dual-layer concept allows the precise control of local charge carrier densities by varying the 02/Ar gas ratio during sputtering for the bottom and top layers. Therefore, extensive annealing steps after the deposition can be avoided. In addition, the dual-layer concept is more robust against variation of the oxygen flow in the deposition chamber. The charge carrier density in the TFT channel is namely adjusted by varying the thickness of the two layers whereby the oxygen concentration during deposition is switched only between no oxygen for the bottom layer and very high concentration for the top layer. The dual-layer TFTs are more stable under bias conditions in comparison with single-layer TFTs processed at low temperatures. Finally, the applicability of this dual-layer concept in logic circuitry such as 19-stage ring oscillators and a TFT backplane on polyethylene naphthalate foil containing a quarter video graphics array active-matrix organic lightemitting diode display demonstrator is proven.

AMOLED backplanes were fabricated on both rigid glass and flexible plastic substrates using a solution processed oxide semiconductor processed at temperatures

In this paper, we present some of the technology challenges and process temperature trade-offs when realizing AM OLED displays on thin flexible plastic films that can be mechanically bent to a roll radius of ∼1 cm. We furthermore present complementary approaches to realize low-power, high resolution OLED displays using self-aligned IGZO TFT architecture; a novel driving method using a compact 2T-1C pixel engine. cop. 2014 JSAP.

The efficiency of small-molecule OLED devices increased substantially in recent years, creating opportunities for power-efficient displays, as only light is generated proportional to the subpixel intensity. However, current active matrix OLED (AMOLED) displays on foil do not validate this power-efficient advantage, as too much power is lost in the AM backplane. AMOLED displays use the analog voltage on the gate of a drive transistor (e.g. M1 in Fig. 30.2.1) to control the pixel current and hence the pixel brightness. Accurate and uniform pixel currents can only be obtained when transistor M1 is driven is saturation. In highresolution technologies on foil, transistor parameters W, L and the mobility μ are limited by technology, imposing a minimal V GS-VT to obtain sufficient current, i.e. V GS-VT > 4V for a-IGZO on foil [1]. Subsequently, to obtain saturation, VDS > 4V, which translates in a static backplane power loss surpassing the OLED power consumption (see red stars in Fig 30.2.1). However, when the OLED pixel impedance around a specific reference current can be matched along a display column line, the accurate pixel current control can be imposed by current DACs implemented in external silicon display column drivers. In this work, we operate M1 as a switch and pixel intensity variations are obtained using Pulse Width Modulation (PWM) of a predefined pixel current, i.e. 2μA/pixel [80*80μm2] (which corresponds in our OLED technology to a light output of 2000Cd/m2). When, in a future implementation the external DACs are calibrated at 0.2μA/pixel, the full brightness would correspond to the typical display brightness of a portable PC, i.e. 200Cd/m2. This concept enables us to reduce the display power voltage at full brightness from 8.2V in a classical AMOLED display on foil configuration to 5V (measured) and for future implementations even down to 4V (see Fig. 30.2.1). As the OLED current load remains equal, a corresponding static power reduction of the display (and increased battery lifetime) is obtained. Digital driving methods of AMOLED displays have been shown before. However, ΔΣ techniques [2] still integrate charge packets on the gate of M1 and hence do not solve the power issue on foil. Other PWM techniques [3] activate only a single active line in the linedriver yielding difficulties to obtain color depths above 6 bits. When multiple independent linedrivers are implemented and their output is multiplexed to alternately drive a single select line, a higher color depth can be obtained [4]. This leads however to a bulky linedriver, which is hard to get within an e.g. 80μm pitch. The design and implementation of a compact integrated linedriver on foil enabling multiple alternating active signals through a single shift register is demonstrated here. © 2014 IEEE.

We demonstrate organic imaging sensor arrays fabricated on flexible plastic foil with the solution processing route for both photodiodes and thin film transistors. We used the photovoltaic P3HT:PCBM blend for fabricating the photodiodes using spin coating and pentacene as semiconductor material for the TFTs. Photodiodes fabricated with P3HT:PCBM absorb in the green part of the visible spectrum which matches with the typical scintillator output wavelength. The arrays consist of 32x32 pixels with variation in pixel resolution of 200μmx200μm, 300μmx300μm and of 1mmx1mm. The accurate reproducibility of shadow images of the objects demonstrates the potential of these arrays for imaging purposes. We also demonstrate that the crosstalk is relatively insignificant despite the fact that the active photodiode forms a continuous layer in the array. Since both photodiodes and TFTs are made of organic material, they are processed at low temperatures below 150°C on foil which means that these imaging sensors can be flexible, light weight and low cost when compared to conventional amorphous silicon based imaging sensors on rigid substrates. In combination with a scintillator on top of the arrays, we show the potential of these arrays for the X-ray imaging applications. cop. 2014 Copyright SPIE. Organisations: Brussels Photonics Team (B-PHOT); Brussels-Capital Region; et al.; Fonds Wetenschappelijk Onderzoek (FWO); The Society of Photo-Optical Instrumentation Engineers (SPIE); Ville de Bruxelles

The P18-4 compartment (operated by TAQA Energy B.V.) would be injected by CO2 at a minimum temperature of 12 degrees C. At these temperatures, the CO2 phase will either be a gas or a liquid. As the initial temperature of the reservoir is 120 oC, the CO2 will eventually be the gaseous or (at higher pressures), the supercritical phase. An outstanding issue was the simulation of the fate and transport of the injected liquid CO2, with emphasis on the temperature effects. In this presentation, we will present results of our latest research efforts.

We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.