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The Mott insulator Ca2RuO4 exhibits an insulator-to-metal transition induced by d.c. current. Despite the thorough examination of the structural changes associated with this transition, a comprehensive knowledge of the response of electronic degrees of freedom is still lacking. Here we demonstrate current-induced modifications of the electronic states of Ca2RuO4. Angle-resolved photoemission spectroscopy in conjunction with four-probe electrical transport (transport-ARPES) measurements reveal a clear reduction of the Mott gap and a modification in the dispersion of the Ru bands. Based on a free-energy analysis, we show that the current-induced phase is electronically distinct from the high-temperature zero-current metallic phase. Our results highlight strong interplay of lattice- and orbital-dependent electronic responses in the current-driven insulator-to-metal transition.

LiCu_{3}O_{3} is an antiferromagnetic mixed valence cuprate where trilayers of edge-sharing Cu(II)O (3d^{9}) are sandwiched in between planes of Cu(I) (3d^{10}) ions, with Li stochastically substituting Cu(II). Angle-resolved photoemission spectroscopy (ARPES) and density functional theory reveal two insulating electronic subsystems that are segregated in spite of sharing common oxygen atoms: a Cu d_{z^{2}}/O p_{z} derived valence band (VB) dispersing on the Cu(I) plane, and a Cu 3d_{x^{2}-y^{2}}/O 2p_{x,y} derived Zhang-Rice singlet (ZRS) band dispersing on the Cu(II)O planes. First-principle analysis shows the Li substitution to stabilize the insulating ground state, but only if antiferromagnetic correlations are present. Li further induces substitutional disorder and a 2D electron glass behavior in charge transport, reflected in a large 530 meV Coulomb gap and a linear suppression of VB spectral weight at E_{F} that is observed by ARPES. Surprisingly, the disorder leaves the Cu(II)-derived ZRS largely unaffected. This indicates a local segregation of Li and Cu atoms onto the two separate corner-sharing Cu(II)O_{2} sub-lattices of the edge-sharing Cu(II)O planes, and highlights the ubiquitous resilience of the entangled two hole ZRS entity against impurity scattering.

Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structure of XMn6Sn6 (X=Dy,Tb,Gd,Y) family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and 4f electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the XMn6Sn6 family, thus providing an ideal platform for the search for, and investigation of, new emergent phenomena in magnetic topological materials.

We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1T-VSe2. Ultrafast snapshots of the light-induced hot carrier dynamics and nonequilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of (200±40) fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasiequilibrium state that is experimentally observed.

The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (Tc∼4.4K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the Γ-A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn3 as a superconductor with nontrivial topological electronic structures.

Bilayer graphene has been predicted to host a moiré miniband with flat dispersion if the layers are stacked at specific twist angles known as the ’magic angles’1,2. Recently, twisted bilayer graphene (tBLG) with a magic angle twist was reported to exhibit a correlated insulating state and superconductivity3,4, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Although tunnelling spectroscopy5–9 and electronic compressibility measurements10 in tBLG have found a van Hove singularity that is consistent with the presence of the flat miniband, a direct observation of the flat dispersion in the momentum space of such a moiré miniband in tBLG is still lacking. Here, we report the visualization of this flat moiré miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution. The high spatial resolution of this technique enabled the measurement of the local electronic structure of the tBLG. The measurements demonstrate the existence of the flat moiré band near the charge neutrality for tBLG close to the magic angle at room temperature.

A topological superconductor (TSC) is a new type of superconductor with non-trivial topology in its bulk electronic structure, which has great potential in both fundamental research and application. However, despite the intensive research efforts worldwide, to date only a few intrinsic (non-heterostructures) materials have been proposed as TSC candidates. In this work, following the theoretical prediction, we experimentally studied a newly proposed TSC candidate, TaSe3. The topological non-trivial surface states were directly observed by using angle-resolved photoemission spectroscopy, while the superconductivity of the compound was examined by both transport and scanning tunneling microscopy measurement. Therefore, TaSe3 was proved to be a promising candidate as a TSC, and a promising research platform for the related novel physics phenomena.

Trigonal tellurium, a small-gap semiconductor with pronounced magneto-electric and magneto-optical responses, is among the simplest realizations of a chiral crystal. We have studied by spin- and angle-resolved photoelectron spectroscopy its unconventional electronic structure and unique spin texture. We identify Kramers-Weyl, composite, and accordionlike Weyl fermions, so far only predicted by theory, and show that the spin polarization is parallel to the wave vector along the lines in k space connecting high-symmetry points. Our results clarify the symmetries that enforce such spin texture in a chiral crystal, thus bringing new insight in the formation of a spin vectorial field more complex than the previously proposed hedgehog configuration. Our findings thus pave the way to a classification scheme for these exotic spin textures and their search in chiral crystals.

WTe2 is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here, we demonstrate two nonmonotonic changes in the electronic structure of WTe2 upon in situ electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe2 layer, which realizes a local crystal structure not normally found in bulk WTe2. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron doping can drive structural and electronics changes in bulk WTe2 with implications for realizing nontrivial band-structure changes in heterointerfaces and devices.

Topological insulators are bulk semiconductors that manifest in-gap surface states with massless Dirac-like dispersion due to the topological bulk-boundary correspondence principle1–3. These surface states can be manipulated by the interface environment to display various emergent phenomena4–11. Here, we use angle-resolved photoemission spectroscopy and scanning tunnelling microscopy to investigate the interplay of crystallographic inhomogeneity with the topologically ordered band structure in a model topological insulator. We develop quantitative analysis methods to obtain spectroscopic information, in spite of a limited dwell time on each measured point. We find that the band energies vary on the scale of 50 meV across the sample surface, and this enables single sample measurements that are analogous to a multi-sample doping series. By focusing separately on the bulk and surface electrons we reveal a hybridization-like interplay between fluctuations in the surface and bulk state energetics.

Nematicity, where rotational symmetry is broken while translational symmetry is conserved, is prevalent in higherature superconductors. In particular, nematic quantum critical point has been universally found near the optimum doping of the superconducting dome of several iron-based superconductor families. In such a regime, evidence for strong nematic fluctuations have been observed. As the precursor to this order, nematic fluctuations emerge before nematicity, providing favorable ground to study how nematic order modifies the electronic structure in the absence of structural distortion. Here we use spatially resolved angle-resolved photoemission spectroscopy to investigate the correlation between the onset of nematic fluctuations and electronic structure in an optimally doped BaFe2(As1-xPx)2 (x∼0.3) superconductor. We reveal a strong spatially varying anisotropy of the Fermi surface on a length scale of tens of microns with strong correlation between the changes in the hole and electron Fermi pockets, consistent with the variations expected in the presence of fluctuating nematic order. These results provide direct evidence for spatial nematic fluctuations in the optimal doping regime of iron-based superconductors.

Transition-metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition. Here, we explore the tunability of the electronic excitation spectrum in GaSe by using angle-resolved photoemission spectroscopy. The electronic structure of the material is modified by in situ potassium deposition as well as by forming GaSxSe1-x alloy compounds. We find that potassium-dosed samples exhibit a substantial change of the dispersion around the valence-band maximum (VBM). The observed band dispersion resembles that of a single tetralayer and is consistent with a transition from the direct-gap character of the bulk to the indirect-gap character expected for monolayer GaSe. Upon alloying with sulfur, we observe a phase transition from AB to AA′ stacking. Alloying also results in a rigid energy shift of the VBM towards higher binding energies, which correlates with a blueshift in the luminescence. The increase of the band gap upon sulfur alloying does not appear to change the dispersion or character of the VBM appreciably, implying that it is possible to engineer the gap of these materials while maintaining their salient electronic properties.

The layered van der Waals antiferromagnet MnBi2Te4 has been predicted to combine the band ordering of archetypical topological insulators such as Bi2Te3 with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi2Te4(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure.

We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460meV, which stems from the band inversion between Hf-d and Te-p orbitals. This band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.

The interplay between strong spin-orbit coupling and electron correlations has recently been the subject of intense investigation, due to a number of theoretically predicted phases such as quantum spin liquids, unconventional superconductivity, complex magnetic orders, and correlated topological phases of matter. In particular, iridates have been proposed as a promising family of materials which could host a number of these phases. Here we report the existence of Dirac nodal lines in the binary oxide IrO2, through a combination of reactive oxide molecular beam epitaxy and angle-resolved photoemission spectroscopy. Unlike in other such materials reported to date, these Dirac nodal lines have the unique property of being simultaneously (i) robust against spin-orbit coupling, as they are protected by the nonsymmorphic symmetry of the rutile structure, and (ii) only partially occupied, since they cross the Fermi level. This should have direct implications on the low-energy physics properties tied to the band velocity such as magnetoresistance and spin Hall effect.

The transition metal dichalcogenide TiSe2 has received significant research attention over the past four decades. Different studies have presented ways to suppress the 200 K charge-density-wave transition, vary lowerature resistivity by several orders of magnitude, and stabilize magnetism or superconductivity. Here we give the results of a synthesis technique whereby samples were grown in a high-pressure environment with up to 180 bar of argon gas. Above 100 K, properties are nearly unchanged from previous reports, but a distinct hysteretic resistance region begins around 80 K, accompanied by insulating lowerature behavior. An accompanying decrease in carrier concentration is seen in Hall effect measurements, and photoemission data show a removal of an electron pocket from the Fermi surface in an insulating sample. We conclude that high inert gas pressure synthesis accesses an underlying nonmetallic ground state in a material long speculated to be an excitonic insulator.

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with the substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS2 stacked on hBN, SiO2, and TiO2 substrates. Using work function and X-ray absorption imaging, we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic bandgaps and electron affinities from the measured valence band offsets of WS2 and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.

The new Microscopic and Electronic Structure Observatory (MAESTRO) at the Advanced Light Source (ALS) in Berkeley provides X-rays of variable polarization, produced by an elliptically polarized undulator (EPU), for angle resolved photoemission (ARPES) and photoemission electron microscopy (PEEM) experiments. The interpretation of photoemission data, in particular of dichroism effects in ARPES, requires the precise knowledge of the exact polarization state. Numerical simulations show that the first harmonics of the EPU at MAESTRO provides soft X-rays of almost 100% on axis polarization. However, the higher harmonics as well as the downstream optical elements of the beamline, have a considerable impact on the polarization of the light delivered to the experimental end-station. Employing a simple reflective polarimeter, the polarization is characterized for variable EPU and beamline settings and the overall degree of polarization in the MAESTRO end-stations is estimated to be on the order of 83%.

The efficiency and stability of RuO2 in electrocatalysis has made this material a subject of intense fundamental and industrial interest. The surface functionality is rooted in its electronic and magnetic properties, determined by a complex interplay of lattice-, spin-rotational, and time-reversal symmetries, as well as the competition between Coulomb and kinetic energies. This interplay was predicted to produce a network of Dirac nodal lines (DNLs), where the valence and conduction bands touch along continuous lines in momentum space. Here we uncover direct evidence for three DNLs in RuO2 by angle-resolved photoemission spectroscopy. These DNLs give rise to a flat-band surface state that is readily tuned by the electrostatic environment, and that presents an intriguing platform for exotic correlation phenomena. Our findings support high spin-Hall conductivities and bulk magnetism in RuO2, and are likely related to its catalytic properties.

The manifestation of Weyl fermions in strongly correlated electron systems is of particular interest. We report evidence for Weyl fermions in the heavy fermion semimetal YbPtBi from electronic structure calculations, angle-resolved photoemission spectroscopy, magnetotransport and calorimetric measurements. At elevated temperatures where 4f-electrons are localized, there are triply degenerate points, yielding Weyl nodes in applied magnetic fields. These are revealed by a contribution from the chiral anomaly in the magnetotransport, which at low temperatures becomes negligible due to the influence of electronic correlations. Instead, Weyl fermions are inferred from the topological Hall effect, which provides evidence for a Berry curvature, and a cubic temperature dependence of the specific heat, as expected from the linear dispersion near the Weyl nodes. The results suggest that YbPtBi is a Weyl heavy fermion semimetal, where the Kondo interaction renormalizes the bands hosting Weyl points. These findings open up an opportunity to explore the interplay between topology and strong electronic correlations.

Understanding the fine interplay between spin and orbital degrees of freedom in the surface states of topological insulators is the key to the development of next-generation spintronics devices. So far, the majority of studies have focused on the helical spin texture of the topologically protected surface state (TSS) and little attention has been devoted to the spin texture of the other surface states: the bulk-originated quantum well states (QWSs). This paper presents such study in a prototypical topological insulator, Bi2Se3. By using spin- and angle-resolved photoemission spectroscopy, we reveal a full momentum-dependent spin texture of the QWSs and their response to light polarization. We find that these states share a similar spin-orbital texture with the TSS. This paper shows an intimate correlation between the surface and bulk states, which was overseen before, and provides relevant information to understand how the surface states evolve with the bulk states.

Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and understand these materials using surface science techniques such as angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) requires low defect, large area, epitaxial coverage with ultra-clean interfaces. We have developed a chemical vapor deposition van der Waals epitaxy growth process where the metal and chalcogen sources are separated such that growth times can be extended significantly to yield high coverage while minimizing surface contamination. We demonstrate the growth of high quality 2D WS2 over large areas on graphene. The as-grown vertical heterostructures are exceptionally clean as demonstrated by ARPES, STM and spatially resolved photoluminescence mapping. With these correlated techniques we are able to relate defect density to electronic band structure and, ultimately, optical properties. We find that our synthetic approach provides ultra-clean, low defect density (~1012 cm-2), ~10 μm large WS2 monolayer crystals, with an electronic band structure and valence band effective masses that perfectly match the theoretical prediction for pristine WS2.

In two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), new electronic phenomena such as tunable bandgaps 1-3 and strongly bound excitons and trions emerge from strong many-body effects 4-6 , beyond the spin and valley degrees of freedom induced by spin-orbit coupling and by lattice symmetry 7 . Combining single-layer TMDs with other 2D materials in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these many-body effects, by means of engineered interlayer interactions 8-10 . Here, we use micro-focused angle-resolved photoemission spectroscopy (microARPES) and in situ surface doping to manipulate the electronic structure of single-layer WS 2 on hexagonal boron nitride (WS 2 /h-BN). Upon electron doping, we observe an unexpected giant renormalization of the spin-orbit splitting of the single-layer WS 2 valence band, from 430 meV to 660 meV, together with a bandgap reduction of at least 325 meV, attributed to the formation of trionic quasiparticles. These findings suggest that the electronic, spintronic and excitonic properties are widely tunable in 2D TMD/h-BN heterostructures, as these are intimately linked to the quasiparticle dynamics of the materials 11-13 .

A paradigmatic case of multi-band Mott physics including spin-orbit and Hund's coupling is realized in Ca2RuO4. Progress in understanding the nature of this Mott insulating phase has been impeded by the lack of knowledge about the low-energy electronic structure. Here we provide-using angle-resolved photoemission electron spectroscopy-the band structure of the paramagnetic insulating phase of Ca2RuO4 and show how it features several distinct energy scales. Comparison to a simple analysis of atomic multiplets provides a quantitative estimate of the Hund's coupling J=0.4 eV. Furthermore, the experimental spectra are in good agreement with electronic structure calculations performed with Dynamical Mean-Field Theory. The crystal field stabilization of the dxy orbital due to c-axis contraction is shown to be essential to explain the insulating phase. These results underscore the importance of multi-band physics, Coulomb interaction and Hund's coupling that together generate the Mott insulating state of Ca2RuO4.

Long known for its peculiar resistivity, showing a thus far unexplained anomalous peak as a function of temperature, ZrTe5 has recently received rising attention in a somewhat different context. While both theoretical and experimental results seem to point to a nontrivial topology of the low-energy electronic states, there is no agreement on the nature of their topological character. Here, by an angle-resolved photoemission study of the evolution of the band structure with temperature and surface doping, we show that (i) the material presents a van Hove singularity close to the Fermi level, and (ii) no surface states exist at the (010) surface. These findings reconcile band structure measurements with transport results and establish the topology of this puzzling compound.