359 results on '"Jungemann, Christoph"'
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2. Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
3. Spherical Harmonics Expansion and Multi-Scale Modeling
4. Spherical Harmonics Expansion and Multi-Scale Modeling
5. Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation
6. A Maximum Principle for Drift-Diffusion Equations and the Scharfetter-Gummel Discretization
7. The Langevin–Boltzmann Equation for Noise Calculation
8. Higher-harmonic generation in boron-doped silicon from band carriers and bound-dopant photoionization
9. Studying the switching variability in redox-based resistive switching devices
10. RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver
11. A Maximum Principle for Drift-Diffusion Equations and the Scharfetter-Gummel Discretization
12. Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation
13. High-harmonic generation in p-doped Si by band non-parabolicity, energy-dependent relaxation and dopant photo-ionization
14. Simulation of THz Oscillations in Semiconductor Devices Based on Balance Equations
15. Microscopic simulation of RF noise in junctionless nanowire transistors
16. Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET
17. DC and Transient Microscopic Simulation of Nanowire NMOSFETs
18. Deterministic Solver for the Multisubband Stationary BTE
19. Efficient 2D k-Space Discretization and Non-Linear Interpolation Schemes
20. Efficient k · p SE Solver
21. Results
22. Iteration Methods
23. Band Structure and Scattering Mechanisms
24. Device Simulation
25. Introduction
26. The Boltzmann Transport Equation and Its Projection onto Spherical Harmonics
27. Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures
28. Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results
29. Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures
30. Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation
31. Results
32. Device Simulation
33. Stochastic Properties of Monte-Carlo Device Simulations
34. Full-Band Structure
35. Momentum-Based Transport Models
36. Scattering Mechanisms
37. The Monte-Carlo Method
38. Semiclassical Transport Theory
39. Introduction
40. Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress
41. Importance of valence-band anharmonicity and carrier distribution for third- and fifth-harmonic generation in Si:B pumped with intense terahertz pulses
42. High Performance, Strained-Ge, Heterostructure p-MOSFETs
43. Noise Calculation in the Semiclassical Framework: A Critical Analysis of the Monte Carlo Method and a Numerical Alternative
44. Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach
45. Device Simulation of the Dyakonov-Shur Plasma Instability for THz Wave Generation
46. Very High Performance, Sub-20nm, Strained Si and Six Ge1-x, Hetero-structure, Center Channel (CC) NMOS and PMOS DGFETs
47. A Deterministic approach to noise in a non-equilibrium electron–phonon system based on the Boltzmann equation
48. Simulation of electronic noise in disordered organic semiconductor devices based on the master equation
49. Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver
50. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
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