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Electric field of thunderclouds modifies components and energy spectra of the cosmic-ray air shower. In particular, thunderstorms accelerate charged particles, resulting in an enhancement of gamma-ray fluxes on the ground, known as a gamma-ray glow. This phenomenon has been observed in recent years by the Gamma-Ray Observation of Winter THunderclouds collaboration from winter thunderstorms in the Hokuriku area of Japan. The present work examines the ambient conditions required to produce spectral features of the previously detected gamma-ray glows, by using Monte Carlo simulations of particle interactions in the atmosphere. We focus on three parameters, the strength and length of the electric field, and the length of a null-field attenuation region below the electrified region. The average spectrum of observed gamma-ray glows in winter thunderstorms of Japan requires an electric field intensity close to 0.31 MV/m, slightly exceeding the Relativistic Runaway Electron Avalanche threshold of 0.284 MV/m. The vertical size of the electric field region should be comparable to 1 km. The estimated attenuation region size is 300–500 m, necessary to reduce the low-energy photon flux of the average gamma-ray glows. There is still a wide range of acceptable parameter sets with degeneracy to make a similar spectrum.

Ξ− atomic X-ray spectroscopy is one of the most useful methods for investigation of the Ξ–nucleus strong interaction. Since the X-ray energy is shifted and/or broadened due to the Ξ–nucleus strong interaction compared to those calculated from electromagnetic interaction alone, the measurement of the energy shift, ΔE, and the width, Γ, give us information on the Ξ–nucleus potential. A serious problem in the measurement is the significant background derived from in-flight Ξ− decay. A novel method of identifying stopped Ξ− events using the nuclear emulsion was developed to realize the first Ξ− atomic X-ray spectroscopy experiment as the J-PARC E07 experiment, which also aimed at searching for ΛΛ and Ξ− hypernuclei in the emulsion. The X-rays emitted from Ξ− Br and Ξ− Ag atoms were measured using germanium detectors. No clear peaks were observed in the obtained spectra. However, we succeeded in reducing the background to 1/170 by this method employing coincidence measurements using nuclear emulsion and X-ray detectors.

Real-space observations in the middle stage of spinodal decomposition have not been achieved because of the small sizes and unclear interfaces of the phases. Here, we performed in situ real-space experiments with heating to quantitatively reveal the local dynamics and structures of a calcium aluminosilicate glass in the middle stage of spinodal decomposition by scanning transmission electron microscopy. This glass separate into CaO–Al2O3–SiO2 phase and SiO2 phases. The observations revealed that the CaO–Al2O3–SiO2 phases with low Ca concentrations behaved as if they were in the middle stage, whereas the CaO–Al2O3–SiO2 phases with high Ca concentrations coarsened as if they were in the final stage. This coexistence of stages suggested that the behaviors of the phases depend not only on time, but also on their local relative concentrations. Differing from the well-known final stage of spinodal decomposition, the phases with relatively high Ca concentrations in the middle stage showed peculiar directional migration guided by the phases with relatively low Ca concentrations. These findings have not been observed before and thus have the potential to provide a new way to control the phase-separated structure.

BACKGROUND: Anthracycline-containing regimens are standard treatment options in adjuvant and neoadjuvant chemotherapy in breast cancer. Chemotherapy-induced nausea and vomiting (CINV) is experienced frequently in patients receiving these regimens, but the risk factors for CINV are unknown. OBJECTIVE: The aim of this study was to investigate risk factors for CINV in anthracycline-containing regimens retrospectively. METHODS: Data were collected from the JONIE study, which was conducted in order to estimate the efficacy of zoledronic acid in a neoadjuvant setting from March 2010 to June 2012 (UMIN000003261). A total of 180 patients were recruited, and we used CINV data from the first cycle of FEC100 treatment and patient backgrounds. As the protocol regulation allowed the use of antiemetic drugs,in the first cycle of the FEC100 regimen, patients received various types of antiemetic agents, which we classified into four groups: Dexamethasone (DEX)+5-HT3 receptor antagonist (5-HT3)+neurokinin-1 receptor antagonist (NK1) (DEX+5-HT3+NK1) group; Dexamethasone (DEX)+5-HT3 receptor antagonist (5-HT3) (DEX+5HT3) group; Dexamethasone (DEX)+5-HT3 receptor antagonist (5-HT3)+dopamine receptor antagonist (DRA) (DEX+5HT3+DRA) group; and Dexamethasone (DEX)+5-HT3 receptor antagonist (5-HT3)+neurokinin-1 receptor antagonist (NK1)+ dopamine receptor antagonist (DRA) (DEX+5-HT3+NK1+DRA) group. Risk factors were selected from patient backgrounds and the combinations of antiemetic drugs. In patient backgrounds, the body mass index (BMI) was stratified into 3 categories: Less than 18.5 (underweight group); equal to or more than 18.5 but less than 25 (standard BMI group); and equal to or more than 25 (overweight group). The risks for CINV were analyzed by univariate and multivariate analyses. P values of less than 0.05 were defined as significant. RESULTS: In a univariate analysis of nausea, the body mass index (BMI) was the only significant factor (P CONCLUSIONS: This study revealed that BMI was the most important risk factor for nausea, and that BMI and the combination of antiemetic drugs were risk factors for vomiting. Underweight-patients tend to have CINV in anthracycline-containing regimen. The DEX+5-HT3+NK1 group was the best antiemetic drug combination. These result show that following the CINV guideline treatment is mandatory in order to prevent CINV. Citation Format: Hayashi M, Nakazawa K, Hasegawa Y, Horiguchi J, Miura D, Ishikawa T, Takao S, Kim SJ, Yamagami K, Miyashita M, Konishi M, Shigeoka Y, Suzuki M, Taguchi T, Kubota T, Tanino Y, Yamada K, Kimura K, Akazawa K, Kohno N. Risk analysis for chemotherapy induced nausea and vomiting (CINV) in patients receiving FEC100 treatment [abstract]. In: Proceedings of the 2018 San Antonio Breast Cancer Symposium; 2018 Dec 4-8; San Antonio, TX. Philadelphia (PA): AACR; Cancer Res 2019;79(4 Suppl):Abstract nr P1-11-07.

In an emulsion-counter hybrid experiment performed at J-PARC, a Ξ^{-} absorption event was observed which decayed into twin single-Λ hypernuclei. Kinematic calculations enabled a unique identification of the reaction process as Ξ^{-}+^{14}N→_{Λ}^{10}Be+_{Λ}^{5}He. For the binding energy of the Ξ^{-} hyperon in the Ξ^{-}-^{14}N system a value of 1.27±0.21 MeV was deduced. The energy level of Ξ^{-} is likely a nuclear 1p state which indicates a weak ΞN-ΛΛ coupling.

We measured the local composition and thickness of SiO2-based glass material from diffraction. By using four dimensional scanning transmission electron microscopy (4D-STEM), we obtained diffraction at each scanning point. Comparing the obtained diffraction with simulated diffraction patterns, we try to measure the local composition and thickness. Although this method requires some constraints, this method measured local composition and thickness with 1/10 or less electron dose of EELS., Comment: 15 pages, 10 figures, 6 supporting figures

Ξ− atomic X-ray spectroscopy is one of the most useful methods for investigation of the Ξ-nucleus strong interaction. A serious problem in the measurement is the significant background coming from in-flight Ξ− decay. For the first Ξ− atomic X-ray spectroscopy experiment, a novel method of identifying stopped Ξ− events using nuclear emulsion was developed to reject background photons from in-flight Ξ− decay. We succeeded in reducing the background to 1/170 by this method employing coincidence measurements using the nuclear emulsion and X-ray detectors.

Silicate glasses are indispensable for optical and photonics applications, and their properties are affected by phase-separated structures. Understanding the phase separation behavior inside the glasses is thus crucial for controlling their optical properties. Here, we attempt to identify the phase-separated structure inside silicate glass by high-angular annular dark field-scanning transmission electron microscopy (HAADF-STEM) combined with a multi-slice image simulation. In addition to the phase-separated structure, we also demonstrate that the identifications of the type and stage of the phase-separation are possible by the HAADF observation in combination with a phase separation simulation.

Al-induced crystallized Ge (AIC-Ge) seeded epitaxy is a promising way to fabricate functional materials on amorphous substrates such as glass or polymer sheets. However, the AIC-Ge had difficulty in producing a continuous thin film without forming fine-grain Ge islands stacked on the surface. In this paper, we solved this problem by initially preparing thicker Ge (100 nm) than Al (50 nm) and then removing excess Ge islands using a unique etching technique. The resulting AIC-Ge allowed for a high (111) orientation (96%) and large grains (>100 μm). Transmission electron microscopy demonstrated that an AIC-Ge-seeded Ge layer, grown by molecular-beam epitaxy at 500 °C, was of high quality reflecting the annihilation of Ge islands. This method opens up the possibility for synthesizing Ge, GaAs, and other functional materials on an amorphous substrate.

Fabricating large-grained polycrystalline Ge (poly-Ge) thin films on conducting-layer coated glass is a promising approach to lower the manufacturing cost of high-efficiency III–V tandem solar cells. We investigated the self-organizing formation of poly-Ge/Al/glass structures by using Al-induced layer exchange. The layer exchange between amorphous Ge and Al layers was completed at a low temperature of 350°C. Forming the interlayer between Ge and Al, i.e., limiting the diffusion of Ge to Al lowered the Ge nucleation rate and then enlarged the grain size of the resulting poly-Ge layer. The natively oxidized Al interlayer, formed by exposing a thin Al membrane (2-nm thickness) to air for 180 min, led to the poly-Ge with grains 46 μm in size. Moreover, the Ge layer was highly (111)-oriented. This Ge/Al/glass structure appears promising for use in the bottom cell of the III–V semiconductor based tandem solar cells, as well as in the epitaxial templates for aligned nanowires and other advanced materials.

BACKGROUND AND PURPOSE: The risk factors of early hemorrhagic complications after endovascular coiling are not well-known. We identified the factors affecting early hemorrhagic complications, defined as any expansion or appearance of hemorrhage shown by head CT in the initial 48 hours after coiling. MATERIALS AND METHODS: We retrospectively reviewed a series of 93 patients who underwent coiling for a ruptured saccular aneurysm between 2006 and 2012 at our hospital. RESULTS: Five patients showed early hemorrhagic complications, and all involved an expansion of the existing intracerebral hematoma immediately after coiling. The associated risk factors were accompanying intracerebral hemorrhage at onset (P < .001), postoperative antiplatelet therapy (P < .001), and thromboembolic complications (P = .044). In the accompanying intracerebral hemorrhage group, the associated risk factors were postoperative antiplatelet therapy (P = .044) and earlier initiation of coiling (9.8 ± 6.5 versus 28.1 ± 24.0 hours, P = .023). Early hemorrhagic complications were significant risk factors for worse clinical outcome (modified Rankin Scale, 2.02 ± 2.21 versus 4.4 ± 2.30, P = .022). None of the 93 patients showed further hemorrhage after the initial 48 hours after coiling. CONCLUSIONS: The accompanying intracerebral hemorrhage at onset, thromboembolic complications, postoperative antiplatelet therapy, and earlier initiation of coiling were the risk factors for early hemorrhagic complications.

Al-induced crystallization (AIC) enables low-temperature crystallization of amorphous Ge thin films on insulators. We investigated growth promotion of Ge thin films using Ge membranes (1–10 nm thickness) that are initially inserted below the Al layer. These Ge insertion layers enhanced supersaturation of Al with Ge, which results in low-temperature AIC (275 °C). However, thick (≥ 3 nm) insertion layers result in small grains because of the high nucleation frequency. A 1-nm-thick insertion layer accomplished a growth promotion and yielded large grains of over 100 μm in diameter. Moreover, electron backscatter diffraction measurement revealed that the AIC-Ge layer was highly (111) oriented. This low-temperature crystallization technique opens up the possibility for developing Ge-based electronic devices on inexpensive glass substrates, as well as on flexible polymer substrates.

We achieved the self-organization of Ge/Al/glass structures by using Al-induced layer exchange at 325 °C. The diffusion-limiting layers formed between Ge and Al significantly induced slow growth under thermal equilibrium conditions and thus allowed fabrication of an energetically stable (111)-oriented Ge layers with grains as large as 20 μm in size.

Low-temperature (350 °C) crystallization of amorphous Ge films on SiO2 was investigated using Al-induced layer exchange (ALILE) process. Thicknesses of Ge and catalytic Al layers were varied in the range of 30-300 nm, which strongly influenced the ALILE growth morphology. Based on the study, the Ge thickness was adjusted to 40 nm while the Al thickness was adjusted 50 nm. This sample satisfied both of the surface coverage of polycrystalline-Ge and the annihilation of randomly oriented Ge regions. Moreover, the enhancement of the heterogeneous Ge nucleation improved the (111) orientation and the grain size. As a result, the area fraction of the (111)-orientation reached as high as 97% and the average grain size as large as 70-μm diameters. This (111)-oriented Ge layer with large-grains promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

A large-grained (111)-oriented Ge thin film is achieved on a SiO2 glass substrate using an Al-induced crystallization (AIC) technique. Low-temperature (350 °C) AIC of an amorphous Ge thin film (50 nm thickness) resulted in a self-organized double-layered structure of polycrystalline Ge layers. The top Ge layer consisted of randomly oriented small grains (1 μm diameter) with a high defect density; in contrast, the bottom Ge layer was of high quality. Based on the growth model, we annihilated the top Ge layer using preferential etching. The bared bottom Ge layer provided a (111)-oriented area fraction of 99% and an average grain size of 90 μm. This Ge layer appears promising for use in Ge-based thin-film devices, as well as a heteroepitaxial seed layer for group III–V compound semiconductors, aligned nanowires, and other advanced materials.

High-quality crystalline Ge thin films on low-cost glass substrates are desired to reduce the fabrication cost of high-efficiency tandem solar cells. We applied an Al-induced crystallization technique to amorphous-Ge films (50-nm thickness) on SiO 2 glass substrates. The annealing temperature of the sample strongly influenced the grain size and the crystal orientation in the grown polycrystalline Ge layers: low annealing temperatures resulted in large grains and high (111)-orientation fractions. As a result, annealing at 325 °C provided 98% (111)-oriented grains with average diameters of 30 μm. Moreover, the grown Ge layers could be used as an epitaxial template for chemical vapor deposition. This large-grained Ge film on a SiO 2 substrate appears promising for use as a Ge light-absorbing layer, as well as an epitaxial buffer layer for group III–V compound semiconductors.

Low-temperature (350°C) crystallization of amorphous Ge films on SiO2 was investigated using Al-induced layer exchange (ALILE) process. Thicknesses of Ge and catalytic Al layers were varied in the range of 30–300 nm, which strongly influenced the ALILE growth morphology. Based on the study, the Ge thickness was adjusted to 40 nm while the Al thickness was adjusted 50 nm. This sample satisfied both of the surface coverage of polycrystalline-Ge and the annihilation of randomly oriented Ge regions. Moreover, the enhancement of the heterogeneous Ge nucleation improved the (111) orientation and the grain size. As a result, the area fraction of the (111)-orientation reached as high as 97% and the average grain size as large as 70-μm diameters. This (111)-oriented Ge layer with large-grains promises to be the high-quality epitaxial template for various functional materials to achieve next-generation devices.

For the case of the thermal design of devices at high temperatures, radiative properties are important. The emissivity of materials depends on their surface conditions and temperatures. The goal of this study is to measure the emissivity of various materials with clear surface conditions. A system for simultaneous measurements of the normal spectral emissivity, optical constants, and thickness of materials at high temperatures has been developed. To determine an accurate surface temperature of specimens, a surface temperature measurement method is applied using the Christiansen effect. This article focuses on evaluations of the Christiansen effect under various conditions. Measurement results of the normal spectral emissivity of ZrO2 from 773 K to 973 K are also presented.

Time-domain magnetization dynamics of sputtered GdFeCo (30 nm) amorphous alloy films was measured by pump-probe method using high-power ultra-short pulse fiber laser. The effective g-factor $g_{\rm eff}$ and effective damping constant $α_{\rm eff}$ of the GdFeCo films were estimated by using a numerical calculation of Landau–Lifshitz–Gilbert equation. The precessional frequency took a maximum near the magnetization compensation composition $C_{\rm M}$ of the GdFeCo, while the estimated $g_{\rm eff}$ and $α_{\rm eff}$ increased around the angular momentum compensation composition $C_{\rm A}$. The compositional dependences of $g_{\rm eff}$ and $α_{\rm eff}$ were roughly described by a mean-field model. The $g_{\rm eff}$ and $α_{\rm eff}$ were also estimated from the ferromagnetic resonance (FMR) spectra, and the data from the FMR spectra agreed well with those from the pump-probe measurement except for the composition near $C_{\rm M}$. The FMR method was unable to excite the magnetization near $C_{\rm M}$ because of the small net magnetization.

The precipitation behavior of AA2618 was studied by a multitude of characterization techniques: microhardness testing, lattice parameter measurement through X-ray diffraction (XRD), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and atom probe field ion microscopy (APFIM). The matrix lattice parameter increased during the first 20 hours of natural aging, due to the formation of Cu clusters and decreased over the next 24 hours, due to the formation of Mg-rich clusters. Prior natural aging weakened subsequent artificial aging hardening at 180 °C, 200 °C, and 230 °C, due to the cluster reversion that delayed the precipitation of strengthening phases. The matrix lattice parameter exhibited erratic changes during artificial aging that corresponded to the formation and partial dissolution of Guinier–Preston–Bagaryatsky (GPB) zones, the transformation of GPB zones to GPB2 zones, and the precipitation of S′. The structural changes during the artificial aging of AA2618 occur in this sequence: supersaturated solid solution → clusters + GPB → GPB + GPB2 → GPB2 + S′ → S′+ S → S.

Suzaku launched in July 2005 is equipped with the wideband instruments covering 0.3–700 keV. In addition to these main instruments, active shield counters of the hard X-ray detector are designed to be a wideband all-sky monitor (WAM). The WAM is a powerful gamma-ray burst monitor with a wide energy range of 50–5000 keV and with a large effective area of 400 cm 2 even around 1 MeV. The paper describes the strategy for the prompt GRB observation with the WAM, and the follow-up observation of X-ray afterglows with the narrow field instruments. So far, the WAM has detected 53 GRBs and half of them were detected simultaneously with other satellites. In addition to that, from at least 8 GRBs, including a bright and hard GRB 051008, it is succeeded to observe significant gamma-ray emission up to 1 MeV. The X-ray afterglow observations were carried out on January 5 and on September 4, 2006. Their results are reported in separate paper.

Exploration in neuroendoscopic surgery is occasionally insufficient because of the structural limitations in endoscope. It is not easy to identify the precise position of the endoscope during an operation. We here show a coaxial technique for neuroendoscopic exploration with monitoring by means of a microfiberscope. The endoscopic coaxial technique consists of two scopes. The microfiberscope has a diameter of 0.75 mm, flexible body and high-quality image system. We tested its ability to visualize the subject at several distances and applied this coaxial technique in neuroendoscopic surgery. The microfiberscope not only visualizes the object but also magnifies it by a distance. The scope was easy to handle with monitoring of its movement in the endoscopic view. The technique allowed us to safely explore details which are difficult to approach with an ordinary fiberscope or rigid-rod scope. The microfiberscope also adjusts to the neuronal anatomy and many clinical situations. Taken together, the microfiber coaxial technique might offer new advantages to modern neuroendoscopic surgery.

In recent years, fretting maps on fretting wear and fretting fatigue conditions proposed by various researchers have been frequently cited in literature. In this paper, four kinds of main fretting maps have been reviewed in detail. Some ambiguity, contradiction, deficiency and common ground have been noted on these maps. The application and further research of the fretting maps has also been noted.

Photoluminescence from Cu 2 ZnSnS 4 bulk single crystals was studied as a function of temperature and excitation power density. The bulk single crystals showed a broad luminescence between 1.1 and 1.45 eV. The peak energy of the photoluminescence was shifted to higher energy side when the excitation power density was increased. The origon of the photoluminescence was attributed to donor-acceptor pair recombination with an activation energy of 48 meV.

We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establishing a high-quality epitaxial technology on a Si substrate and by significantly reducing the parasitic resistance, a very low specific on-state resistance of 1.9 m/spl Omega//spl middot/cm/sup 2/ is achieved. The breakdown voltage is as high as 350 V, which is attributed to the Si substrate acting as a backside field plate. Because of reduction of the parasitic inductance, very high level of current (2.0 kA/cm/sup 2/) transients, i.e., a turn-on time of 98 ps and a turn-off time of 96 ps, are successfully measured for the first time.

The present status of hypernuclear gamma-ray spectroscopy with Hyperball is summarized. We observed two gamma transitions of 16-Lambda-O(1- -> 1-,0-) and obtained the strength of the Lambda-N tensor force. In 10B(K-,pi- gamma) data, we did not observe the spin-flip M1 transition of 10-Lambda-B(2- -> 1-), but gamma rays from hyperfragments such as 7-Lambda-Li(7/2+ -> 5/2+) and 9-Lambda-Be(3/2+ ->1/2+) were observed. In 11B(pi+,K+ gamma) data, we observed six gamma transitions of 11_Lambda-B. We also attempted an inclusive gamma-ray measurement with stopped K- beam.

The initial design study of 28 GHz/35 GHz dual frequency gyrotron is presented. The design is based on 28 GHz 1 MW gyrotron which we have developed. And it is studied whether 35 GHz oscillation is ...