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212 results on '"KUO, S.-Y."'

1. Experimental Realization of an NMR Quantum Switch

Author

Tsai, I. M., Kuo, S. Y., Huang, S. L., Lin, Y. C., and Chen, T. T.

Subjects
Quantum Physics
Abstract

In this paper, we report an experimental realization of quantum switch using nuclear spins and magnetic resonant pulses. The nuclear spins of H and C in carbon-13 labelled chloroform are used to carry the information, then nuclear magnetic resonance pulses are applied to perform either bypass or cross function to achieve the switching. Compared with a traditional space or time domain switch, this switching architecture is much more scalable, therefore a high throughput switching device can be built simply by increasing the number of I/O ports. In addition, it can be used not only as a device to switch classical information, but also a building block of quantum information networks., Comment: 4 pages, 5 figures, LaTex, IEEEims.cls

Published
2004

2. Digital Switching in the Quantum Domain

Author

Tsai, I. M. and Kuo, S. Y.

Subjects
Quantum Physics
Abstract

In this paper, we present an architecture and implementation algorithm such that digital data can be switched in the quantum domain. First we define the connection digraph which can be used to describe the behavior of a switch at a given time, then we show how a connection digraph can be implemented using elementary quantum gates. The proposed mechanism supports unicasting as well as multicasting, and is strict-sense non-blocking. It can be applied to perform either circuit switching or packet switching. Compared with a traditional space or time domain switch, the proposed switching mechanism is more scalable. Assuming an n-by-n quantum switch, the space consumption grows linearly, i.e. O(n), while the time complexity is O(1) for unicasting, and O(log n) for multicasting. Based on these advantages, a high throughput switching device can be built simply by increasing the number of I/O ports., Comment: 24 pages, 16 figures, LaTeX

Published
2002
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3. A Systematic Algorithm for Quantum Boolean Circuits Construction

Author

Tsai, I. M. and Kuo, S. Y.

Subjects
Quantum Physics
Abstract

To build a general-purpose quantum computer, it is crucial for the quantum devices to implement classical boolean logic. A straightforward realization of quantum boolean logic is to use auxiliary qubits as intermediate storage. This inefficient implementation causes a large number of auxiliary qubits to be used. In this paper, we have derived a systematic way of realizing any general m-to-n bit combinational boolean logic using elementary quantum gates. Our approach transforms the m-to-n bit classical mapping into a t-bit unitary quantum operation with minimum number of auxiliary qubits, then a variation of Toffoli gate is used as the basic building block to construct the unitary operation. Finally, each of these building blocks can be decomposed into one-bit rotation and two-bit control-U gates. The efficiency of the network is taken into consideration by formulating it as a constrained set partitioning problem., Comment: 12 pages, LaTeX

Published
2001

20. Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions.

Author

Chiu, C. H., Kuo, S. Y., Lo, M. H., Ke, C. C., Wang, T. C., Lee, Y. T., Kuo, H. C., Lu, T. C., and Wang, S. C.

Subjects
*OPTICAL properties, *QUANTUM wells, *GALLIUM nitride, *INDIUM, *SAPPHIRES, *SUBSTRATES (Materials science), *ENERGY levels (Quantum mechanics), *LOW temperatures
Abstract

A-plane InxGa1-xN/GaN (x=0.09, 0.14, 0.24, and 0.3) multiple-quantum-wells (MQWs) samples, with a well width of about 4.5 nm, were achieved by utilizing r-plane sapphire substrates. Optical quality was investigated by means of photoluminescence (PL), cathodoluminescence, and time resolved PL measurements (TRPL). Two distinguishable emission peaks were examined from the low temperature PL spectra, where the high- and low-energy peaks were ascribed to quantum wells and localized states, respectively. Due to an increase in the localized energy states and absence of quantum confined Stark effect, the quantum efficiency was increased with increasing indium composition up to 24%. As the indium composition reached 30%, however, pronounced deterioration in luminescence efficiency was observed. The phenomenon could be attributed to the high defect densities in the MQWs resulted from the increased accumulation of strain between the InGaN well and GaN barrier. This argument was verified from the much shorter carrier lifetime at 15 K and smaller activation energy for In0.3Ga0.7N/GaN MQWs. In addition, the polarization-dependent PL revealed that the degree of polarization decreased with increasing indium compositions because of the enhancement of zero-dimensional nature of the localizing centers. Our detailed investigations indicate that the indium content in a-plane InGaN/GaN MQWs not only has an influence on optical performance, but is also important for further application of nitride semiconductors. [ABSTRACT FROM AUTHOR]

Published
2009
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21. Flexible Antireflection Layer of ZnO Nanorod Embedded in PDMS Film for Enhancing Omnidirectional Photovoltaic Performance of CIGS Solar Cell

Author

Hsieh, M.-Y., Kuo, S.-Y., Lai, F.-I., and Han, H.-V.

Subjects
THIN FILM SOLAR CELLS, CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Abstract

29th European Photovoltaic Solar Energy Conference and Exhibition; 1756-1758, This study examines the enhanced photoelectric conversion observed in Cu(In,Ga)Se2 (CIGS) solar cells with a flexible polydimethylsiloxane (PDMS) antireflection layer (ARL) with embedded ZnO nanorods fabricated using an aqueous solution method. The cell with the PDMS antireflection layer with embedded ZnO nanorods enhance the short-circuit current density from 18.27 to 21.12 mA/cm2 under a simulated one-sun condition. Because of the sun’s movement, the broadband and omnidirectional light harvesting is important. Therefore, the omnidirectional anti-reflection of CIGS solar cells with the various ARL is also investigated.

Published
2014
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24. Localization of a carboxylic residue possibly involved in the inhibition of vacuolar H+-pyrophosphatase by N, N'-dicyclohexylcarbodi-imide

Author

Yang, S J, Jiang, S S, Kuo, S Y, Hung, S H, Tam, M F, and Pan, R L

Subjects
Plants, Medicinal, Molecular Sequence Data, Fabaceae, Peptide Fragments, Protein Structure, Secondary, Inorganic Pyrophosphatase, Kinetics, Structure-Activity Relationship, Cytosol, Dicyclohexylcarbodiimide, Vacuoles, Amino Acid Sequence, Asparagine, Enzyme Inhibitors, Pyrophosphatases, Chromatography, High Pressure Liquid, Research Article
Abstract

A vacuolar H(+)-pyrophosphatase (EC 3.6.1.1) that catalyses PP(i) hydrolysis and the electrogenic translocation of protons from the cytosol to the vacuole lumen, was purified from etiolated hypocotyls of mung bean seedlings (Vigna radiata L.). Group-specific modification was used to identify a carboxylic residue involved in the inhibition of vacuolar H(+)-pyrophosphatase. Carbodi-imides, such as N,N'-dicyclohexylcarbodi-imide (DCCD) and 1-ethyl-3-(3-dimethylamino-propyl)carbodi-imide, and Woodward's reagent K caused a progressive decline in the enzymic activity of vacuolar H(+)-pyrophosphatase in a time- and concentration-dependent manner. The stoichiometry of labelling of the vacuolar H(+)-pyrophosphatase by [(14)C]DCCD determined that DCCD modifies one carboxylic residue per subunit of the enzyme. Protection studies suggest that the DCCD-reactive carboxylic residue resides at or near the substrate-binding site. Furthermore, peptide mapping analysis reveals that Asp(283), located in the putative loop V of a tentative topological model of vacuolar H(+)-pyrophosphatase on the cytosolic side, was labelled by radioactive [(14)C]DCCD. Cytosolic loop V contains both DCCD-sensitive Asp(283) and a conserved motif sequence, rendering it a candidate for the catalytic site of vacuolar H(+)-pyrophosphatase. A topological picture of the active domain of vacuolar H(+)-pyrophosphatase is tentatively proposed.

Published
1999

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