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Efficient magnetization control is a central issue in magnetism and spintronics1-8. Particularly, there are increasing demands for versatile manipulation of magnetic states in van der Waals (vdW) magnets for spintronic devices with their unconventional functionalities9-13. The electric control of the vdW magnets has been achieved for the magnetization switching via spin torque, but current-induced phase transition between ferromagnetic-to-antiferromagnetic states without external magnetic field is yet to be demonstrated12,14,15. Here, we report the current-induced magnetic phase transition in a vdW ferromagnet Fe5GeTe2, resulting in a giant magnetoresistance. Based on magneto-transport measurements and relevant theoretical analysis, we demonstrate that the transition sequentially occurs through the layers by voltage difference across the vdW gap, induced by an in-plane current. The current-tunability of magnetic phase in Fe5GeTe2 opens a path for electric control of the magnetic properties, expanding our ability to use vdW magnets for diverse spintronic device applications.

A scaling law elucidates the universality in nature, presiding over many physical phenomena which seem unrelated. Thus, exploring the universality class of scaling law in a particular system enlightens its physical nature in relevance to other systems and sometimes unearths an unprecedented new dynamic phase. Here, the dynamics of weakly driven magnetic skyrmions are investigated, and its scaling law is compared with the motion of a magnetic domain wall (DW) creep. This study finds that the skyrmion does not follow the scaling law of the DW creep in 2D space but instead shows a hopping behavior similar to that of the particle-like DW in 1D confinement. In addition, the hopping law satisfies even when a topological charge of the skyrmion is removed. Therefore, the distinct scaling behavior between the magnetic skyrmion and the DW stems from a general principle beyond the topological charge. This study demonstrates that the hopping behavior of skyrmions originates from the bottleneck process induced by DW segments with diverging collective lengths, which is inevitable in any closed-shape spin structure in 2D. This work reveals that the structural topology of magnetic texture determines the universality class of its weakly driven motion, which is distinguished from the universality class of magnetic DW creep.

Skyrmion-based devices are an attractive candidate for nonvolatile memory and low-power computation. In a real device, however, skyrmions easily annihilate at device edges, which hampers device applications. Here, we present a novel skyrmion-based logic device, which takes advantage of the skyrmion annihilation (SA) and increases the efficiency of logic operation. An SA half adder (HA) is implemented in a ferromagnet/heavy metal nanotrack by introducing a geometric notch that annihilates the skyrmion. In addition, full adder and ${n}$ -bit SA ripple-carry adder are demonstrated by directly cascading the SA HAs. The prototype of a 32-bit SA ripple-carry adder consumes energy as low as 0.62 pJ per each operation, which is only 18% of the previously proposed skyrmion adder. Our SA logic gate can, therefore, be a promising candidate for the beyond-CMOS logic device.

Antiferromagnetic spin waves have been predicted to offer substantial functionalities for magnonic applications due to the existence of two distinct polarizations, the right-handed and left-handed modes, as well as their ultrafast dynamics. However, experimental investigations have been hampered by the field-immunity of antiferromagnets. Ferrimagnets have been shown to be an alternative platform to study antiferromagnetic spin dynamics. Here we investigate thermally excited spin waves in ferrimagnets across the magnetization compensation and angular momentum compensation temperatures using Brillouin light scattering. Our results show that right-handed and left-handed modes intersect at the angular momentum compensation temperature where pure antiferromagnetic spin waves are expected. A field-induced shift of the mode-crossing point from the angular momentum compensation temperature and the gyromagnetic reversal reveal hitherto unrecognized properties of ferrimagnetic dynamics. We also provide a theoretical understanding of our experimental results. Our work demonstrates important aspects of the physics of ferrimagnetic spin waves and opens up the attractive possibility of ferrimagnet-based magnonic devices. Right- and left-handed spin-wave modes are identified in ferrimagnets, and their dynamics are revealed.

X-ray magnetic circular dichroism (XMCD) spectroscopy is a key technique for studying magnetic materials, providing element specificity and significantly high detection sensitivity to magnetic mome...

The electrical control of antiferromagnetic moments is a key technological goal of antiferromagnet-based spintronics, which promises favourable device characteristics such as ultrafast operation and high-density integration as compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments by electric current has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report current-induced manipulation of the exchange bias in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the exchange bias is gradually modulated up to ±22 degrees by an in-plane current, which is independent of the NiFe thickness. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface which then rotate the antiferromagnetic moments. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices., Antiferromagnets have great promise for spin-based information processing, offering both high operation speed, and an immunity to stray fields. Here, Kang et al demonstrate electrical manipulation of the exchange-bias, without the need for a heavy metal layer.

Electrical conduction in magnetic materials depends on their magnetization configuration, resulting in various magnetoresistances (MRs). The microscopic mechanisms of MR have so far been attributed to either an intrinsic or extrinsic origin, yet the contribution and temperature dependence of either origin has remained elusive due to experimental limitations. In this study, we independently probed the intrinsic and extrinsic contributions to the anisotropic MR (AMR) of a permalloy film at varying temperatures using temperature-variable terahertz time-domain spectroscopy. The AMR induced by the scattering-independent intrinsic origin was observed to be approximately 1.5% at T = 16 K and is virtually independent of temperature. In contrast, the AMR induced by the scattering-dependent extrinsic contribution was approximately 3% at T = 16 K but decreased to 1.5% at T = 155 K, which is the maximum temperature at which the AMR can be resolved using THz measurements. Our results experimentally quantify the temperature-dependent intrinsic and extrinsic contributions to AMR, which can stimulate further theoretical research to aid the fundamental understanding of AMR.

Physical unclonable function (PUFs) utilize inherent random physical variations of solid-state devices and are a core ingredient of hardware security primitives. PUFs promise more robust information security than that provided by the conventional software-based approaches. While silicon- and memristor-based PUFs are advancing, their reliability and scalability require further improvements. These are currently limited by output fluctuations and associated additional peripherals. Here, highly reliable spintronic PUFs that exploit field-free spin-orbit-torque switching in IrMn/CoFeB/Ta/CoFeB structures are demonstrated. It is shown that the stochastic switching polarity of the perpendicular magnetization of the top CoFeB can be achieved by manipulating the exchange bias directions of the bottom IrMn/CoFeB. This serves as an entropy source for the spintronic PUF, which is characterized by high entropy, uniqueness, reconfigurability, and digital output. Furthermore, the device ensures a zero bit-error-rate under repetitive operations and robustness against external magnetic fields, and offers scalable and energy-efficient device implementations.

Spin Hall nano-oscillators (SHNOs) exploiting current-driven magnetization auto-oscillation have recently received much attention because of their potential for oscillator-based neuromorphic computing. Widespread neuromorphic application with SHNOs requires an energy-efficient way to tune oscillation frequency in broad ranges and store trained frequencies in SHNOs without the need for additional memory circuitry. Voltage control of oscillation frequency of SHNOs was experimentally demonstrated, but the voltage-driven frequency tuning was volatile and limited to megahertz ranges. Here, we show that the frequency of SHNO is controlled up to 2.1 GHz by a moderate electric field of 1.25 MV/cm. The large frequency tuning is attributed to the voltage-controlled magnetic anisotropy (VCMA) in a perpendicularly magnetized Ta/Pt/[Co/Ni]n/Co/AlOx structure. Moreover, non-volatile VCMA effect enables control of the cumulative frequency using repetitive voltage pulses, which mimic the potentiation and depression functions of biological synapses. Our results suggest that the voltage-driven frequency tuning of SHNOs facilitates the development of energy-efficient spin-based neuromorphic devices.

The orbital Hall effect describes the generation of the orbital current flowing in a perpendicular direction to an external electric field, analogous to the spin Hall effect. As the orbital current carries the angular momentum as the spin current does, injection of the orbital current into a ferromagnet can result in torque on the magnetization, which provides a way to detect the orbital Hall effect. With this motivation, we examine the current-induced spin-orbit torques in various ferromagnet/heavy metal bilayers by theory and experiment. Analysis of the magnetic torque reveals the presence of the contribution from the orbital Hall effect in the heavy metal, which competes with the contribution from the spin Hall effect. In particular, we find that the net torque in Ni/Ta bilayers is opposite in sign to the spin Hall theory prediction but instead consistent with the orbital Hall theory, which unambiguously confirms the orbital torque generated by the orbital Hall effect. Our finding opens a possibility of utilizing the orbital current for spintronic device applications, and it will invigorate researches on spin-orbit-coupled phenomena based on orbital engineering., The orbital Hall effect involves the transport of orbital angular momentum perpendicular to an applied charge current, analogous to the spin Hall effect. Here, Lee et al examine magnetic torques present in a Nickel/Tantalum bilayer, clearly demonstrating the contribution of the orbital Hall effect.

Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional ferromagnetic materials1. Though spin-transfer torque (STT) is a key for electrical control of spins as successfully demonstrated in ferromagnetic spintronics, experimental understanding of STT in antiferromagnets has been still lacking despite a number of pertinent theoretical studies2-5. Here, we report experimental results on the effects of STT on domain-wall (DW) motion in antiferromagnetically-coupled ferrimagnets. We find that non-adiabatic STT acts like a staggered magnetic field and thus can drive DWs effectively. Moreover, the non-adiabaticity parameter {\beta} of STT is found to be significantly larger than the Gilbert damping parameter {\alpha}, challenging our conventional understanding of the non-adiabatic STT based on ferromagnets as well as leading to fast current-induced antiferromagnetic DW motion. Our study will lead to further vigorous exploration of STT for antiferromagnetic spin textures for fundamental physics on spin-charge interaction as wells for efficient electrical control of antiferromagnetic devices., Comment: 19 pages, 4 figures

Electrical control of antiferromagnetic moment is a key technology of antiferromagnet-based spintronics, which promises favourable device characteristics of ultrafast operation and high-density integration compared to conventional ferromagnet-based devices. To date, the manipulation of antiferromagnetic moments has been demonstrated in epitaxial antiferromagnets with broken inversion symmetry or antiferromagnets interfaced with a heavy metal, in which spin-orbit torque (SOT) drives the antiferromagnetic domain wall. Here, we report electrical manipulation of the antiferromagnetic easy axis in IrMn/NiFe bilayers without a heavy metal. We show that the direction of the antiferromagnetic easy axis and associated exchange bias is gradually modulated between up to ±22 degrees by in-plane current, which is independent of the NiFe thickness, however. This suggests that spin currents arising in the IrMn layer exert SOTs on uncompensated antiferromagnetic moments at the interface and then rotate the antiferromagnetic moments coherently. Furthermore, the memristive features are preserved in sub-micron devices, facilitating nanoscale multi-level antiferromagnetic spintronic devices.

We investigate the magnetoresistance of ferrimagnetic GdFeCo across the magnetization compensation temperature ${T}_{\mathrm{M}}$. The magnetic field dependence of longitudinal resistivity (${\ensuremath{\rho}}_{\mathrm{xx}}$) shows opposite trends below and above ${T}_{\mathrm{M}}$, and the variation of ${\ensuremath{\rho}}_{\mathrm{xx}}$ with $B$ becomes more significant as the temperature decreases. The observed unconventional magnetoresistance is attributed to the sperimagnetism of GdFeCo. Further investigations on the transverse resistivity (${\ensuremath{\rho}}_{\mathrm{xy}}$) of GdFeCo unveils that, contrary to the recent reports that the transition metal dominates transport of rare-earth transition-metal ferrimagnets, the Gd contribution to magnetoresistance is comparable to the FeCo contribution, showing that the transport of GdFeCo is antiferromagnetic. Our results therefore show that ferrimagnets are a convenient platform for studying antiferromagnetic spin transport and also are potential materials that can enable antiferromagnetic spin devices.

Magnetic and spintronic media have offered fundamental scientific subjects and technological applications. Magneto-optic Kerr effect (MOKE) microscopy provides the most accessible platform to study the dynamics of spins, magnetic quasi-particles, and domain walls. However, in the research of nanoscale spin textures and state-of-the-art spintronic devices, optical techniques are generally restricted by the extremely weak magneto-optical activity and diffraction limit. Highly sophisticated, expensive electron microscopy and scanning probe methods thus have come to the forefront. Here, we show that extreme anti-reflection (EAR) dramatically improves the performance and functionality of MOKE microscopy. For 1-nm-thin Co film, we demonstrate a Kerr amplitude as large as 20° and magnetic domain imaging visibility of 0.47. Especially, EAR-enhanced MOKE microscopy enables real-time detection and statistical analysis of sub-wavelength magnetic domain reversals. Furthermore, we exploit enhanced magneto-optic birefringence and demonstrate analyser-free MOKE microscopy. The EAR technique is promising for optical investigations and applications of nanomagnetic systems., Magneto-optic Kerr effect microscopy is useful for dynamic magnetic studies, but is limited by the weak magneto-optical activity. Here, the authors show that extreme anti-reflection result in a Kerr amplitude as large as 20° and enables real-time detection of sub-wavelength magnetic domain reversals.

Electric-field-driven ion migration can significantly modulate the electric and magnetic properties of solids, creating novel functionalities useful for advanced electromagnetic devices. Earlier works have used vertically stacked structures for this purpose, in which the redox process results from ion migration driven by a vertical electric field through the interfaces. However, the existence of the interfaces between the dissimilar layers causes the oxidation and reduction processes to have high and asymmetric energy barriers, which means that a large electric field is required to control the devices. Here, we show that in a partially oxidized single GdOx wire using a lateral electric field configuration, low and symmetric energy barriers for the oxidation and reduction processes can be achieved. We provide evidence that the redox process is the result of the lateral motion of oxygen ions by directly visualizing the electric-field-driven real-time ionic motion using an optical microscope. An electric field as low as 105 V/m was able to drive oxygen ions at room temperature, allowing controllable modulation of the electrical resistance using a lateral electric field. A large negative magnetoresistance was also observed in the GdOx wire, and its magnitude was significantly enhanced up to 20% at 9 T through oxygen ion control. Our results suggest that the electrical and magnetic properties of single GdOx can be efficiently controlled through oxygen ion motion driven by a lateral electric field, which paves the way for fully functional electromagnetic devices such as artificial synapses. A new approach for creating tiny wires that move oxygen ions instead of electrons can offer researchers efficient control over devices with brain-like conductivity. According to neuroscientists, synapses, the junctions where two neurons meet, store information by activating different types of conductive states. Soogil Lee and Kab-Jin Kim from the KAIST institute in Daejeon, South Korea, and colleagues report similar behavior in nanoscale-thin wires made from gadolinium oxide, a rare-earth material in which oxygen ions can move freely. By pushing ions in the wire laterally between a cathode and an anode using an electric field, the team could establish two different conductivity levels due to slight changes in redox chemistry. The simplicity of this design enables lower-energy ion manipulation than previous studies employing vertically stacked films of gadolinium oxide and other metals. Electric-field-driven ion migration is an effective way to control many physical properties such as electric and magnetic properties of materials. In this research, we demonstrated that remarkably small electric field as low as 105 V/m can effectively modulate resistance of a GdOx microwire due to the lateral motion of oxygen ions. This result enables mimicking a synaptic device with low power consumption like as a brain. Furthermore, huge MR modulation of the GdOx microwire with the electric field provides novel functionality as an electromagnetic device.

Antiferromagnetic spin waves have been predicted to offer substantial functionalities for magnonic applications due to the existence of two distinct polarizations, the right-handed and left-handed modes, as well as their ultrafast dynamics. However, experimental investigations have been hampered by the field-immunity of antiferromagnets. Ferrimagnets have been shown to be an alternative platform to study antiferromagnetic spin dynamics. Here we investigate thermally excited spin waves in ferrimagnets across the magnetization compensation and angular momentum compensation temperatures using Brillouin light scattering. Our results show that right-handed and left-handed modes intersect at the angular momentum compensation temperature where pure antiferromagnetic spin waves are expected. A field-induced shift of the mode-crossing point from the angular momentum compensation temperature and the gyromagnetic reversal reveal hitherto unrecognized properties of ferrimagnetic dynamics. We also provide a theoretical understanding of our experimental results. Our work demonstrates important aspects of the physics of ferrimagnetic spin waves and opens up the attractive possibility of ferrimagnet-based magnonic devices.

The non-equilibrium state between magnons and phonons is the key to understand the spin-caloric phenomena. We developed a unique optical reflectometry technique to spatially resolve Kerr angle ( θK) and optical reflectance ( R) in a magnetic insulator—thulium iron garnet (TmIG). The TmIG was subjected to a thermal gradient to estimate populations of thermally excited magnons and phonons through the variation of θK and R. The results showed that the spatial gradient of θK is different from that of R, indicating the non-equilibrium state between magnons and phonons. Particularly, the characteristic decay length of θK was significantly influenced by the heating power and the magnetic field, suggesting non-linear magnon scattering in a high magnon density regime. Our work not only provides a scheme to investigate the spatial profiles of magnons and phonons but also reveals the magnon–phonon non-equilibrium in TmIG. Hence, this report will stimulate further studies based on magnon–phonon non-equilibrium such as a transverse spin Seebeck effect and Bose–Einstein condensation.

We investigate the Hall resistance of metallic multilayers Ta/Cr/CoTb/Ta/Si. In addition to the anomalous Hall effect originating from the ferrimagnetic CoTb layer, the unconventional Hall effect (UHE) is observed in our multilayer samples. The UHE depends not only on the current and magnetic fields but also on the device geometry and temperature in a unique way. Our results suggest that the UHE does not originate from the spin–orbit torque driven magnetization tilting but occurs possibly due to thermionic emission and Lorentz force at the metal/Si interface, where the Schottky barrier is formed. We also find that the space-charge effect causes geometric dependence of the Hall resistance. The magnitude of UHE is sizable and linearly proportional to the longitudinal magnetic field, suggesting that the observed UHE is attractive to the magnetic-field sensing industry.

Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be much faster than ferromagnetic counterpart because antiferromagnets have higher resonance frequencies than ferromagnets. Recent theories indeed predicted faster dynamics of antiferromagnetic domain walls (DWs) than ferromagnetic DWs. However, experimental investigations of antiferromagnetic spin dynamics have remained unexplored mainly because of the immunity of antiferromagnets to magnetic fields. Furthermore, this immunity makes field-driven antiferromagnetic DW motion impossible despite rich physics of field-driven DW dynamics as proven in ferromagnetic DW studies. Here we show that fast field-driven antiferromagnetic spin dynamics is realized in ferrimagnets at the angular momentum compensation point TA. Using rare-earth 3d-transition metal ferrimagnetic compounds where net magnetic moment is nonzero at TA, the field-driven DW mobility remarkably enhances up to 20 km/sT. The collective coordinate approach generalized for ferrimagnets and atomistic spin model simulations show that this remarkable enhancement is a consequence of antiferromagnetic spin dynamics at TA. Our finding allows us to investigate the physics of antiferromagnetic spin dynamics and highlights the importance of tuning of the angular momentum compensation point of ferrimagnets, which could be a key towards ferrimagnetic spintronics.

Anisotropic magnetoresistance (AMR) is well known magnetic phenomenon. Despite of its long history, a microscopic origin of AMR has not been fully understood due to lack of experimental technique. Here we exploit terahertz time domain spectroscopy (THz - TDS) to reveal the microscopic origin of AMR. Angle dependent resistivity and scattering time data shows that high resolution and stable THz - TDS is needed to resolve scattering time difference of AMR at room temperature.

In the emerging field of $m\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}g\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}c\phantom{\rule{0}{0ex}}s$, the aim is to use magnons (quantized spin waves) as information carriers in computing technology. For magnonic operation, it is important to control the direction of spin-wave propagation at will. Employing the concept of a phased array antenna, this study shows that it is possible to control the direction of spin waves in thin films without any waveguide, magnonic crystal, or other specifically designed geometry. Furthermore, the phased-array concept enables spin-wave focusing, leading to local confinement with enhanced amplitude. These results pave the way for future work in magnon-based spintronic applications.

The spin-transfer-torque-driven (STT-driven) dynamics of a domain wall in an easy-axis rare-earth transition-metal ferrimagnet is investigated theoretically and numerically in the vicinity of the angular momentum compensation point $T_A$, where the net spin density vanishes. The particular focus is given on the unusual interaction of the antiferromagnetic dynamics of a ferrimagnetic domain wall and the adiabatic component of STT, which is absent in antiferromagnets but exists in the ferrimagnets due to the dominant coupling of conduction electrons to transition-metal spins. Specifically, we first show that the STT-induced domain-wall velocity changes its sign across $T_A$ due to the sign change of the net spin density, giving rise to a phenomenon unique to ferrimagnets that can be used to characterize $T_A$ electrically. It is also shown that the frequency of the STT-induced domain-wall precession exhibits its maximum at $T_A$ and it can approach the spin-wave gap at sufficiently high currents. Lastly, we report a numerical observation that, as the current density increases, the domain-wall velocity starts to deviate from the linear-response result, calling for a more comprehensive theory for the domain-wall dynamics in ferrimagnets driven by a strong current., Comment: 8 pages, 5 figures

In creep regime, a magnetic domain wall (DW) is regarded as a one-dimensional object that consists of many small segments. However, observation of such a specific segment motion has remained a challenge due to its small size. Here we present direct evidence of individual DW segment motion by employing electrical Hall measurement. When the DW is moved by a weak magnetic field, we find that the anomalous Hall effect (AHE) resistance, RAHE, exhibits random jumps between two resistance states. We confirm that the RAHE jump appears in various samples but the RAHE jump is absent when the width of sample is narrower than DW jump size. These results imply the existence of a specific segment length that governs the DW creep motion.

Magnetic skyrmions are expected to offer novel functionalities in emerging magnetic devices. However, when the skyrmion moves along a nanotrack, its trajectory is generally curved by the skyrmion Hall effect, resulting in an annihilation of skyrmion at the edge. Here we propose a method to avoid this edge-induced skyrmion annihilation. We found that the annihilation of skyrmion is largely suppressed when we replace the conventional edge with a chiral domain wall boundary, due to topological repulsion. We also provide device architectures that enable the guiding, sorting and size-tuning of multiple skyrmions, which could be potentially useful for future skyrmion devices.

Spin-related phenomena, such as the giant magnetoresistance and the spin-transfer torque, have led to a new era of nano-spintronics in last two decades. The discovery of these physical phenomena has contributed to a substantial increase in the data storage capacity of computers. Another revolutionary phenomenon, the interfacial Dzyaloshinskii-Moriya interaction (DMI), was recently discovered in ultra-thin ferromagnet/heavy-metal bilayers. The DMI stabilizes nanometre-sized chiral spin textures such as Neel domain walls and hedgehog skyrmions. These chiral objects find the potential for applications in ultra-high density, low-energy, and high-speed memory devices because they are stable due to topological protection and easy to move with high efficiency. As both stability and current-driven speed of chiral spin textures are proportional to the DMI strength [A. Thiaville et al., Europhys Lett. 100, 57002 (2012); A. Fert, V. Cros, and J. Sampiao, Nat. Nanotechnol. 8, 152 (2013)], tremendous efforts are being devoted to finding high-DMI materials. In this respect, understanding the microscopic origin of DMI is of critical importance. Here we discuss the microscopic origin of the interfacial DMI with experimental and theoretical studies as follows: First, we show the temperature dependence of the DMI for a Pt/Co/MgO trilayer; the DMI increases with decreasing temperature in a range from 300 to 100 K. To discuss this temperature dependence of the DMI, that of the spin and orbital magnetic moments of Co and Pt is studied by X-ray magnetic circular dichroism (XMCD) spectroscopy. We find that spin moment values of Co and Pt show temperature dependences due to change in Heisenberg exchange. Furthermore, the intra-atomic magnetic dipole moment, which is due to the asymmetric spin-density distribution, shows strong temperature dependence, suggesting a sizable modification of the charge distribution between the in-plane and the out-of-plane d-orbitals under temperature variation. We also find that the out-of-plane orbital moment shows large temperature dependence while in-plane orbital moment does not, revealing a close connection between the anisotropy of orbital moment and the DMI. The ab-initio and the tight-binding model calculations suggest that the ISB-dependent electron hopping, which gives rise to the asymmetric charge distribution at the interface of the FM/HM, is a possible microscopic origin of the correlation between the orbital anisotropy and the DMI.