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While silicon solar cells dominate global photovoltaic energy production, their continued improvement is hindered by the single junction limit. One potential solution is to use molecular singlet exciton fission to generate two electrons from each absorbed high-energy photon. We demonstrate that the long-standing challenge of coupling molecular excited states to silicon solar cells can be overcome using sequential charge transfer. Combining zinc phthalocyanine, aluminum oxide, and a shallow junction crystalline silicon microwire solar cell, the peak charge generation efficiency per photon absorbed in tetracene is (138 +- 6)%, comfortably surpassing the quantum efficiency limit for conventional silicon solar cells and establishing a new, scalable approach to low cost, high efficiency photovoltaics., Comment: 34 pages, 14 figures

Design and modification of the interfaces, always a critical issue for semiconductor devices, has become the primary tool to harness the full potential of halide perovskite (HaP)-based ones. In particular the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review we describe the unique challenges and opportunities of these approaches (section A). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surface (section B). We then lay out the energetic alignment processes to adjacent transport and buffer layers (section C) and finally elaborate on the impact of the interface formation on how well/poor a device functions. Based on those sections we then present a road map for the next steps in interfacial design principles for HaP semiconductors (section D).

Oxygen plasma is a widely used treatment to change the surface properties of organic layers. This treatment is particularly interesting to enable the deposition from solution of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) on top of the active layer of organic solar cells or photodetectors. However, oxygen is known to be detrimental to organic devices, as the active layer is very sensitive to oxygen and photo-oxidation. In this study, we aim to determine the impact of oxygen plasma surface treatment on the performance of organic photodetectors (OPD). We show a significant reduction of the sensitivity as well as a change in the shape of the external quantum efficiency (EQE) of the device. Using hole density and conductivity measurements, we demonstrate the p-doping of the active layer induced by oxygen plasma. Admittance spectroscopy shows the formation of trap states approximately 350 meV above the highest occupied molecular orbital of the active organic semiconductor layer. Numerical simulations are carried out to understand the impact of p-doping and traps on the electrical characteristics and performance of the OPDs., Comment: Full paper, figures and supporting information

The polymer (PBDTTT-c) p-doped with the molecular dopant (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concentrations, which limits the performance attainable through organic semiconductor doping. Scanning Electron Microscopy is used to correlate the evolution of hole conductivity and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energy-dispersive X-ray analysis along with liquid-state Nuclear Magnetic Resonance experiments are carried out to determine the composition of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concentrations and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concentration and not negatively affect conductivity., Comment: Full papers and figures with supporting information

We compare the charge transport characteristics of heavy doped p- and n-Si-alkyl chain/Hg junctions. Photoelectron spectroscopy (UPS, IPES and XPS) results for the molecule-Si band alignment at equilibrium show the Fermi level to LUMO energy difference to be much smaller than the corresponding Fermi level to HOMO one. This result supports the conclusion we reach, based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction, that for both p- and n-type junctions the energy difference between the Fermi level and LUMO, i.e., electron tunneling, controls charge transport. The Fermi level-LUMO energy difference, experimentally determined by IPES, agrees with the non-resonant tunneling barrier height deduced from the exponential length-attenuation of the current.

Using d. functional theory (DFT) computations, the authors demonstrated a substantial skeletal relaxation when the structure of 2,5-bis-[4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase comparing with the mol. structure detd. from monocrystal x-ray diffraction. The origin of such a relaxation is explained by a strong environmental strains induced by the presence of anthracene entities. Also, the estn. of the frontier orbital levels showed that this structural relaxation affects mainly the LUMO that is lowered of 190 meV in the gas phase. To check if these theor. findings would be confirmed for thin films of BAS, the authors turned to UV photoemission spectroscopy and/or inverse photoemission spectroscopy and electrooptical measurements. The study of the c.d. or voltage and luminance or voltage characteristics of an ITO/PEDOT/BAS/Au device clearly demonstrated a very unusual temp.-dependent behavior. Using a thermally assisted tunnel transfer model, this behavior likely originated from the variation of the electronic affinity of the silole deriv. with the temp. The thermal agitation relaxes the mol. strains in thin films as it is shown when passing from the cryst. to the gas phase. The relaxation of the intramol. thus induces an increase of the electronic affinity and, as a consequence, the more efficient electron injection in org. light-emitting diodes.

Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature but not on molecular length, suggesting transport by thermionic emission over a barrier in the Si. At higher voltage, the current decreases exponentially with molecular length, suggesting tunneling through the molecules. The tunnel barrier is estimated, from transport and photoemission data, to be ~1.5 eV with a 0.25me effective mass., Comment: 13 pages, 3 figures