415 results on '"Kakushima, K."'
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2. Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors
3. Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates
4. Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes
5. Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
6. La2O3 gate dielectrics for AlGaN/GaN HEMT
7. AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS
8. Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown
9. Comparative study of electrical characteristics in (1 0 0) and (1 1 0) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
10. Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures
11. La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
12. Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs
13. Valence number transition and silicate formation of cerium oxide films on Si(100)
14. Effects of aluminum doping on lanthanum oxide gate dielectric films
15. Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics
16. Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
17. Improving electrical characteristics of W/HfO 2/In 0.53Ga 0.47As gate stacks by altering deposition techniques
18. Effect of thin Si insertion at metal gate/high- k interface on electrical characteristics of MOS device with La 2O 3
19. Selection of rare earth silicates for highly scaled gate dielectrics
20. Characterization of flatband voltage roll-off and roll-up behavior in La 2O 3/silicate gate dielectric
21. Interface and electrical properties of La-silicate for direct contact of high- k with silicon
22. Experimental study for high effective mobility with directly deposited HfO 2/La 2O 3 MOSFET
23. Post metallization annealing study in La 2O 3/Ge MOS structure
24. Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation
25. Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post- CMOS Applications 11
26. Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate.
27. Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure.
28. Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices
29. Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
30. Band bending measurement of HfO 2/SiO 2/Si capacitor with ultra-thin La 2O 3 insertion by XPS
31. Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application
32. Improvement of interfacial properties with interfacial layer in La 2O 3/Ge structure
33. Thermal-stability improvement of LaON thin film formed using nitrogen radicals
34. Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements
35. 3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology
36. Modeling and Simulation of Si IGBTs
37. Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing
38. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance
39. Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
40. Observation of Tunneling FET Operation in MOSFET with NiSi/Si Schottky Source/Channel Interface
41. Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
42. Suppression of Lateral Encroachment of Ni Silicide into Si Nanowires Using Nitrogen Incorporation
43. Impact of Alkali-Earth-Elements Incorporation on Vfb Roll-Off Characteristics of La2O3 Gated MOS Device
44. Switching of 3300V Scaled IGBT by 5V Gate Drive
45. Silicon periodic nano-structures obtained by laser exposure of nano-wires
46. Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing
47. Preface: Silicon compatible emerging materials, processes, and technologies for advanced CMOS and post-CMOS applications 9
48. Preface
49. Turn-Off Loss Improvement by IGBT Scaling
50. Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs
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