332 results on '"Kang, Myounggon"'
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2. Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
3. Circuit simulation of floating-gate FET (FGFET) for logic application
4. Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
5. Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
6. Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computing
7. Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
8. Selective Erase Operation for Multiple Strings of 3D Ferroelectric (Fe)-NAND Flash Memory
9. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
10. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
11. Synaptic plasticity features and neuromorphic system simulation in AlN-based memristor devices
12. Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN device
13. Short-term and long-term synaptic plasticity in Ag/HfO2/SiO2/Si stack by controlling conducting filament strength
14. An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications
15. Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning
16. Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system
17. Channel Potential of Bandgap-Engineered Tunneling Oxide (BE-TOX) in Inhibited 3D NAND Flash Memory Strings.
18. An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications.
19. Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process
20. Investigation on floating-gate field-effect transistor for logic-in-memory application
21. SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing
22. The Optimization of Program Operation for Low Power Consumption in 3D Ferroelectric (Fe)-NAND Flash Memory.
23. An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied
24. Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
25. Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM
26. Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
27. GIDL analysis of the process variation effect in gate-all-around nanowire FET
28. Analysis of Self-Heating Effects on vertical FET according to Shallow Trench Isolation
29. Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance
30. Analysis and optimization of RC delay in vertical nanoplate FET
31. Non-volatile logic-in-memory ternary content addressable memory circuit with floating gate field effect transistor
32. Analysis of Channel Potential Recovery According to the Back Pattern in 3D NAND Flash Memory
33. Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing.
34. SnO 2 -Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computing.
35. Circuit modeling of the electro-thermal behavior of nanoscale bulk-FinFETs
36. Inhibited Channel Potential of 3D NAND Flash Memory String According to Transient Time
37. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOX/TaN Memristors
38. Analysis of Logic-in-Memory Full Adder Circuit with Floating Gate Field Effect Transistor (FGFET)
39. Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications
40. Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
41. The study of relation between variable retention time and channel implantation
42. Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applications.
43. Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory
44. A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied
45. Additional file 1 of Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
46. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO X /TaN Memristors.
47. Forming-Free Tunable Analog Switching in WO x /TaO x Heterojunction for Emulating Electronic Synapses.
48. High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory
49. A Novel Program Operation Scheme With Negative Bias in 3-D NAND Flash Memory
50. The novel SCR-based ESD protection with low triggering and high holding voltages
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