170 results on '"Kang, Seung H."'
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2. Nonsurgical Rhinoplasty With Polydioxanone Threads and Fillers
3. Embedded STT-MRAM: Device and Design
4. Spin-Transfer-Torque MRAM
5. Homozygosity for the Toll-Like Receptor 2 R753Q Single-Nucleotide Polymorphism Is a Risk Factor for Cytomegalovirus Disease After Liver Transplantation
6. Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction
7. Recent advances in spintronics for emerging memory devices
8. STT-MRAM Sensing: A Review
9. Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique
10. Copper interconnects for semiconductor devices
11. Toll-like receptor 2 polymorphism and gram-positive bacterial infections after liver transplantation
12. Spectrum of early-onset and late-onset bacteremias after liver transplantation: Implications for management
13. Performance Prospects of Deeply Scaled Spin-Transfer Torque Magnetic Random-Access Memory for In-Memory Computing
14. Distribution Analysis and Multiple-point Tail Fitting Yield Estimation Method for STT-MRAM
15. Tail Fitting Yield Estimation Method for Resistive Non-Volatile Memory
16. Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS
17. Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region
18. A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories
19. An Adaptive 3T-3MTJ Memory Cell Design for STT-MRAM-Based LLCs
20. Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM
21. A Study on Practically Unlimited Endurance of STT-MRAM
22. Inherent spin transfer torque driven switching current fluctuations in magnetic element with in-plane magnetization and comparison to perpendicular design.
23. Effect of interlayer coupling in CoFeB/Ta/NiFe free layers on the critical switching current of MgO-based magnetic tunnel junctions.
24. Inherent spin transfer torque driven switching current fluctuations in magnetic element with in-plane magnetization and comparison to perpendicular design
25. Nanomaterials for electronic applications: Beyond building blocks
26. Foreword
27. Silicon nanoelectronics: Precise fabrication via a bottom-up approach
28. Foreword
29. A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area
30. Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS
31. Foreword
32. Equalization scheme analysis for high-density spin transfer torque random access memory
33. Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM
34. Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM
35. Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM
36. Area-optimal sensing circuit designs in deep submicrometer STT-RAM
37. Demonstration of a Highly Tunable Hybrid nMOS-Magnetic-Tunnel-Junction Ring Oscillator
38. An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM
39. A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory
40. Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter
41. Thermally Robust Perpendicular STT-MRAM Free Layer Films Through Capping Layer Engineering
42. Impact of Write Pulse and Process Variation on 22 nm FinFET-Based STT-RAM Design: A Device-Architecture Co-Optimization Approach
43. Perpendicular magnetization of CoFeB on single-crystal MgO.
44. Distinction and correlation between magnetization switchings driven by spin transfer torque and applied magnetic field.
45. Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM
46. Reference-circuit analysis for high-bandwidth spin transfer torque random access memory
47. Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM
48. Architecture design with STT-RAM: Opportunities and challenges.
49. Unified embedded non-volatile memory for emerging mobile markets
50. An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM
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