92 results on '"Kang, Xuanwu"'
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2. Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition
3. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer
4. High-Power GaN SBD Limiter for Sub-6G With Fast Response and Recovery
5. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
6. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
7. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes
8. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
9. Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
10. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate
11. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier
12. Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
13. First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology
14. Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode
15. High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation
16. Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V
17. Design and fabrication of field-plated normally offβ -Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application
18. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
19. Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
20. Normally-Off-$\beta$ -Ga2O3 Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure
21. Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
22. Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure
23. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
24. Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS
25. Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V.
26. Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition.
27. Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application.
28. Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage.
29. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNxGrown by Low-Pressure Chemical Vapor Deposition
30. Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures
31. Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking
32. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
33. Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2
34. Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS
35. Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
36. High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
37. Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2.
38. Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs
39. The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate
40. Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
41. Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
42. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
43. High temperature behaviour of GaN-on-Si high power MISHEMT devices
44. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
45. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
46. (Invited) GaN-on-Si For High-Voltage Applications
47. New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs.
48. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With Al2O3 and Si3N4/Al2O3 Gate Dielectrics.
49. Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology
50. AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility.
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