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Significance We recently synthesized coaxially nested one-dimensional van der Waals heterostructures in which boron nitride nanotubes or molybdenum disulfide nanotubes grew seamlessly on a single-walled carbon nanotube template. In this work, edge structures, nucleation sites, and crystal epitaxial relationships in heteronanotubes are unambiguously revealed by a nondestructive transmission electron microscopic technique. These understandings, together with the characterization technique developed here, can help to optimize the synthesis process. Structure-controlled heteronanotubes may, ultimately, be used to build nanoscale devices such as gate-all-around nanotube transistors., We recently synthesized one-dimensional (1D) van der Waals heterostructures in which different atomic layers (e.g., boron nitride or molybdenum disulfide) seamlessly wrap around a single-walled carbon nanotube (SWCNT) and form a coaxial, crystalized heteronanotube. The growth process of 1D heterostructure is unconventional—different crystals need to nucleate on a highly curved surface and extend nanotubes shell by shell—so understanding the formation mechanism is of fundamental research interest. In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD)–synthesized 1D heterostructures. Edge structures, nucleation sites, and crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and nondestructive access to many intrinsic structural details. In particular, we have distinguished different-shaped boron nitride nanotube (BNNT) edges, which are confirmed by electron diffraction at the same location to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between the SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this 1D heterostructure material group but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nanometers) atomic substrates.

Growing coaxial nanotubes Heterostructures of highly crystalline two-dimensional materials such as graphene, hexagonal boron nitride (hBN), and molybdenum disulfide (MoS 2 ) are now routinely assembled from films or grown as layers. Xiang et al. report the growth of one-dimensional analogs of these heterostructures on single-walled carbon nanotubes (SWCNTs) through a chemical vapor deposition (see the Perspective by Gogotsi and Yakobson). Single-crystalline monolayers or multilayers of hBN or MoS 2 were grown that maintained the electrical conductivity of the SWCNT. A monolayer of MoS 2 was grown on a trilayer of hBN that encapsulated a SWCNT. Science , this issue p. 537 ; see also p. 506

In order to achieve the chirality-specific growth of single-walled carbon nanotubes (SWCNTs), it is crucial to understand the growth mechanism. Even though many molecular dynamics (MD) simulations have been employed to analyze the SWCNT growth mechanism, it has been difficult to discuss the chirality determining kinetics because of the defects remaining on the SWCNTs grown in simulations. In this study, we demonstrate MD simulations of defect-free SWCNTs, that is, chirality definable SWCNTs, under the optimized carbon supply rate and temperature. The chiralities of the SWCNTs were assigned as (14,1), (15,2), and (9,0), indicating the preference of near-zigzag and pure-zigzag SWCNTs. The SWCNTs contained at least one complete row of defect-free walls consisting of only hexagons. The near-zigzag SWCNTs grew via a kink-running process, in which bond formation between a carbon atom at a kink and a neighboring carbon chain led to formation of a hexagon with a new kink at the SWCNT edge. Defects including pentagons and heptagons were sometimes formed but effectively healed into hexagons on metal surfaces. The pure-zigzag SWCNTs grew by the kink-running and the hexagon nucleation processes. In addition, chirality change events along SWCNTs with incorporation of pentagon-heptagon pair defects were observed in the MD simulations. Here, pentagons and heptagons were frequently observed as adjacent pairs, resulting in ( n, m) chirality changes by (±1,0), (0,±1), (1,-1), or (-1,1).

Single-walled and multiwalled molybdenum disulfide (MoS

Molecular dynamics simulation was performed to understand the growth mechanism of single-walled carbon nanotubes (SWNTs) by using the Brenner–Tersoff potential as the interaction among carbon atoms (C–C) and the Tersoff-type potential as the interaction between carbon and metal (C–M) and between metal and metal atoms (M–M). The potential functions for C–M and M–M bonds were established from the results of ab initio calculations. The growth of high-quality SWNTs was simulated at a suitable temperature and supply ratio of carbon atoms. The potential energy of carbon atoms was strongly dependent on the number of C–C and C–M bonds. The dependence explains the growth process, including cap formation, its lift-off, and the continuous SWNT growth.

The possibility of continuous Fermi level tuning of Nb-doped WSe2 under an external electric field is investigated, using the density functional theory combined with the effective screening medium method. The Fermi level monotonically increases and decreases as the carrier concentration increases and decreases, respectively, by controlling the external electric field. The electronic structure of Nb-doped WSe2 is insensitive to the Nb concentration and arrangement. Furthermore, it was demonstrated that the electric field simply shifts the Fermi level of Nb-doped WSe2, resulting in the constant quantum capacitance through the gate voltage, irrespective of the Nb concentration and arrangement.

Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systematically investigated by optical spectroscopy. The strong photoluminescence (PL) from single-walled MoS$_2$ nanotubes supported by core BNNTs is observed in this work, which evidences a direct band gap structure for single-walled MoS$_2$ nanotubes with around 6 - 7 nm in diameter. The observation is consistent with our DFT results that the single-walled MoS$_2$ nanotube changes from an indirect-gap to a direct-gap semiconductor when the diameter of a nanotube is more than around 5 nm. On the other hand, when there are SWCNTs inside the heteronanotubes of BNNTs and MoS$_2$ nanotubes, the PL signal is considerably quenched. The charge transfer and energy transfer between SWCNTs and single-walled MoS$_2$ nanotubes were examined through characterizations by PL, XPS, and Raman spectroscopy. Unlike the single-walled MoS$_2$ nanotubes, multi-walled MoS$_2$ nanotubes do not emit light. Single- and multi-walled MoS$_2$ nanotubes exhibit different Raman features in both resonant and non-resonant Raman spectra. The method of assembling heteronanotubes using BNNTs as templates provides an efficient approach for exploring the electronic and optical properties of other transition metal dichalcogenide nanotubes.

Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is sensitive to the NT diameter: armchair MoS$_2$ NTs act as indirect gap semiconductors for diameters up to approximately 5.0 nm, while armchair MoS$_2$ NTs with larger diameters act as direct gap semiconductors with band edges located in the vicinity of $k = 2\pi/3$. This finding implies that MoS$_2$ NTs with large diameters should exhibit similar photoluminescence to 2D monolayer MoS$_2$ sheets. This indirect-to-direct band gap crossover is ascribed to the upward shift of the valence band peak at the $\Gamma$ point in small diameter NTs, which is caused by the tensile strain resulting from their tubular structures., Comment: 4 pages, 4 figures, under review