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5. Dynamic $\mathrm{R}_{\mathrm{ON}}$ in $\beta$-Ga2O3 MOSFET Power Devices

Author

Moule, Taylor, primary, Singh, Manikant, additional, Pomeroy, James, additional, Karboyan, Serge, additional, Uren, Michael J., additional, Wong, Man Hoi, additional, Sasaki, Kohei, additional, Kuramata, Akito, additional, Yamakoshi, Shigenobu, additional, Higashiwaki, Masataka, additional, and Kuball, Martin, additional

Published
2019
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Author

Moule, Taylor, Singh, Manikant, Pomeroy, James, Karboyan, Serge, Uren, Michael J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka, Kuball, Martin, Moule, Taylor, Singh, Manikant, Pomeroy, James, Karboyan, Serge, Uren, Michael J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka, and Kuball, Martin

Published
2019

7. Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Author

Singh, Manikant, primary, Casbon, Michael A., additional, Uren, Michael J., additional, Pomeroy, James W., additional, Dalcanale, Stefano, additional, Karboyan, Serge, additional, Tasker, Paul J., additional, Wong, Man Hoi, additional, Sasaki, Kohei, additional, Kuramata, Akito, additional, Yamakoshi, Shigenobu, additional, Higashiwaki, Masataka, additional, and Kuball, Martin, additional

Published
2018
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9. Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Author

Singh, Manikant, Casbon, Michael A., Uren, Michael J., Pomeroy, James W., Dalcanale, Serge, Karboyan, Serge, Tasker, Paul J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka, Kuball, Martin, Singh, Manikant, Casbon, Michael A., Uren, Michael J., Pomeroy, James W., Dalcanale, Serge, Karboyan, Serge, Tasker, Paul J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka, and Kuball, Martin

Published
2018

10. (Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices:an industry perspective

Author

Moens, Peter, Banerjee, Abhishek, Constant, Aurore, Coppens, Peter, Caesar, Marcus, Li, Zilan, Vanderweghe, Steven, Declercq, Frederick, Padmanabhan, Balaji, Jeon, Woochul, Guo, Jia, Salih, Ali, Tack, M., Meneghini, M., Dalcanale, Stefano, Tajilli, A, Meneghesso, G., Zanoni, E., Uren, Michael, Chatterjee, Indranil, Karboyan, Serge, Kuball, Martin, Roozeboom, F, Narayanan, V, Kakushima, K, Timans, P J, Gusev, E P, Karim, Z, and De Gendt, S

Subjects
CDTR
Abstract

Although astounding performance is already proven by many research papers, the widespread adoption of GaN power devices in the market is still hampered by (1) yield and reproducibility ; (2) cost ; (3) reliability. All three factors are to be considered, but to convince customers to adopt GaN power devices, proven device and product reliability is a must. Cost is kept acceptably low by growing the GaN epi stack on 6 inch and 8inch Si substrates, and by processing the GaN power device technology in standard CMOS production lines. This paper will focus on the most important intrinsic reliability mechanisms for GaN power devices. It will cover gate dielectric reliability, Ohmic contact reliability, accelerated drain stress testing (high temperature reverse bias--HTRB) and high voltage device wear-out testing (high voltage off-state stress--HVOS). Acceleration models are discussed A measurement strategy to extract valuable information about the physical properties of the buffer layers (e.g. activation energies of the traps, conduction mechanisms, …) based on simple transmission line structures, is outlined.

Published
2016
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11. Desafíos de confiabilidad para los FET basados ??en GaN

Author

Kuball, Martin, Uren, Michael J., Pomeroy, James W., Karboyan, Serge, Chatterjee, Indranil, Liu, Dong, Anaya, Julian, and Brazzini, Tommaso

Subjects
GaN-based, Hardware_INTEGRATEDCIRCUITS, Power electronic applications
Abstract

GaN-based field effect transistors (FETs) are being developed for microwave and power electronic applications. Presently there are two main aspects that are being considered in the device reliability field: (i) for ultra-high power microwave electronic applications GaN integration with diamond for optimal heat sinking which poses reliability challenges in the integration of dissimilar materials such as related the coefficient in thermal expansion (CTE), and (ii) for power electronic applications the most optimal use of carbon doping of GaN as insulating buffer, as this can result in large dynamic Ron effects, which requires a detailed understanding of the underlying device physics to mitigate potential negative effects of trap states introduced. The latest results in this field will be discussed.

Published
2016

16. (Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Author

Moens, Peter, primary, Banerjee, Abhishek, additional, Constant, Aurore, additional, Coppens, Peter, additional, Caesar, Markus, additional, Li, Zilan, additional, Vandeweghe, Steven, additional, Declercq, Frederick, additional, Padmanabhan, Balaji, additional, Jeon, Woochul, additional, Guo, Jia, additional, Salih, Ali, additional, Tack, Marnix, additional, Meneghini, Matteo, additional, Dalcanale, Stefano, additional, Tajilli, A, additional, Meneghesso, Gaudenzio, additional, Zanoni, Enrico, additional, Uren, Mike, additional, Chatterjee, Indranil, additional, Karboyan, Serge, additional, and Kuball, Martin, additional

Published
2016
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17. Analysis of Barrier Inhomogeneities in AlGaN/GaN HEMTs' Schottky Diodes by I-V-T measurements

Author

Karboyan, Serge, Tartarin, Jean-Guy, Lambert, B, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Toulouse III - Paul Sabatier (UT3), United Monolithic Semiconductors (UMS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
ideality factor, Schottky diode, AlGaN/GaN HEMT, Werner's method, effective mass, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Richardson constant, Schottky barrier height inhomogeneity
Abstract

International audience; Gate design and process is a major reliability issue in AlGaN/GaN HEMTs, arousing the setup of accurate tools and models to determine the Schottky diode parameters. This paper proposes the study of the Schottky diode on a set of two HEMT structures featuring different gate pad connections: as some electrical differences can be found out from the behavior of leakage currents (and associated reliability consequences), it is of prime importance to detect if the extrinsic design of the gate pad impacts the Schottky barrier behavior and hence the physical and electrical parameters. Therefore, forward gate I-V measurements in the temperature range of 100K-400K are presented: the ideality factor and the Schottky barrier height are extracted. An investigation on the Schottky barrier height by using the conventional Richardson plot from the well known physical equations gives an effective Richardson constant (A*) value far from the theory. The model can be greatly improved by applying Werner's model which leads to A* in good agreement with the theory. A small difference is found between the structures, due to a weak difference between the real effective masses. The study reveals a spatial barrier inhomogeneity under the gate at the metal-semiconductor interface on the two sets of devices featuring an extrinsic difference at the interconnection between the gate finger and the pad. However, the Schottky parameters are the same for all tested devices using Werner's model, instead of that from the classical physical equation of the Schottky diode.

Published
2013

18. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements

Author

Karboyan, Serge, Tartarin, Jean-Guy, Rzin, M, Brunel, L, Curutchet, A, Malbert, N, Labat, N, Carisetti, D, Lambert, B, Mermoux, M, Romain-Latu, E, THOMAS, Florian, Bouexière, C, Moreau, C, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse III - Paul Sabatier (UT3), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), NANOELECTRONIQUE/III-V, Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS)-Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), TRT - THALES RESEARCH & TECHNOLOGY, United Monolithic Semiconductors (UMS), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Centre de droit maritime et océanique (CDMO), Université de Nantes - UFR Droit et Sciences Politiques (UFR DSP), Université de Nantes (UN)-Université de Nantes (UN), DGA Maîtrise de l'information (DGA.MI), Direction générale de l'Armement (DGA), and ANR-10-VERS-0006,ReAGaN,Analyse de la fiabilité de technologies GaN. Développement d'une léthodologie innovante d'analyse physique et électrique à l'échelle du composant(2010)

Subjects
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; The study of the pulsed drain current or noise characteristics in AlGaN/GaN HEMTs is the key of knowledge for designing the power amplifiers, the low noise amplifiers and the oscillators or mixers, but it is well accepted today that this study is not fully accomplished without pointing on the effect of the gate leakage current; It is obvious that the transistor's leakage current may disturb its operation at high power and high frequency. Leakage currents studies are also an area of great importance in optimization of safe operating area and reliability of HEMTs. Therefore, room temperature pulsed I-V and low frequency noise measurements of gate and drain currents of AlGaN/GaN HEMTs have been investigated under different bias conditions on two devices showing identical drain current and different gate current levels. The results show a correlation between two non-destructive measurement techniques applied on devices under test.

Published
2013
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19. I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies

Author

Tartarin, Jean-Guy, Karboyan, Serge, Olivié, François, Astre, Guilhem, Bary, Laurent, Lambert, B, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Université Toulouse III - Paul Sabatier (UT3), Service Instrumentation Conception Caractérisation (LAAS-I2C), United Monolithic Semiconductors (UMS), ANR-10-VERS-0006,ReAGaN,Analyse de la fiabilité de technologies GaN. Développement d'une léthodologie innovante d'analyse physique et électrique à l'échelle du composant(2010), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
reliability, GaN HEMT, drain-lag, gate-lag, I-DLTS, trapping effects, low frequency noise, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract

International audience; GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors dedicated to high frequency applications. However, experiencing reliability studies mechanisms on a given technology cannot be carried out to another one, depending on changes of the doping, passivation layer thickness or material, content of Al or In in the ternary composition of the channel… Among the more problematic causes of degradation for high electron mobility transistors (HEMT), traps need to be accurately identified: this paper proposes the jointed expertise using three different experimental workbenches to identify trapping-detrapping effects and free charges effects in AlGaN/GaN HEMT devices over samples from a European foundry. Different samples have been stressed using DC biased devices at ambient temperatures of 25°C and 150°C, and using HTRB stresses at 150°C. Stressed devices and virgin samples are measured using pulsed I-V characterizations (lag effects attributed to free charges), current Deep Level Transient Spectroscopy (I-DLTS) measurements and low frequency noise (LFN) measurements. Each experimental setup has its own specificities, and allows the determination of activation energies and capture sections of the traps, or how these traps or charges affect the transistor performance under realistic HF conditions. Drain-Lag and Gate-lag signatures evidence the large stress effect on the devices, but with different nuances partially correlated to gate leakage currents. Traps measured with I-DTLS and LFN techniques evidence partially correlated origins, and thermally activated traps can be discriminated from electrically activated ones. This approach gives a deeper insight of the prevailing mechanisms causing partial or total failures of the AlGaN/GaN devices.

Published
2011

23. ?Leaky Dielectric? Model for the Suppression of Dynamic R\mathrm{ON} in Carbon-Doped AlGaN/GaN HEMTs.

Author

Uren, Michael J., Karboyan, Serge, Chatterjee, Indranil, Pooth, Alexander, Moens, Peter, Banerjee, Abhishek, and Kuball, Martin

Subjects
*DIELECTRICS, *MODULATION-doped field-effect transistors, *SWITCHING transients, *EPITAXY, *SIMULATION methods & models
Abstract

GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable to dynamic \textRON dispersion, leading to reduced switching efficiency. In this paper, we identify the causes of this dispersion using substrate bias ramps to isolate the leakage paths and trapping locations in the epitaxy and simulation to identify their impact on the device characteristics. It is shown that leakage can occur both vertically and laterally, and we suggest that this is associated not only with bulk transport, but also with extended defects as well as hole gases at heterojunctions. For exactly the same epitaxial design, it is shown using a “leaky dielectric” model that depending on the leakage paths, dynamic \textRON dispersion can vary between insignificant and infinite. An optimum leakage configuration is identified to minimize dispersion requiring a resistivity which increases with depth in the buffer stack. It is demonstrated that leakage through the undoped GaN channel is required over the entire gate to drain gap, and not just under the contacts, in order to fully suppress dispersion. [ABSTRACT FROM PUBLISHER]

Published
2017
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24. Dedicated design of experiments and experimental diagnostic tools for accurate reliability investigations on AlGaN/GaN high electron mobility transistors (HEMTs)

Author

Karboyan, Serge and Karboyan, Serge

Abstract

Le développement intensif et rapide des dispositifs HEMT à base de nitrure de gallium a été largement favorisé par les qualités intrinsèques du matériau pour proposer des performances élevées (haute puissance, haute fréquence...) et pour autoriser un fonctionnement en environnement extrêmement sévère (fluctuations thermiques, brouillage, tenues aux radiations ionisantes...) par rapport aux technologies concurrentes plus traditionnelles (Si, GaAs...). À ce jour, les dispositifs HEMTs AlGaN/GaN sont considérés comme une alternative prometteuse pour remplacer la technologie GaAs, et se positionnent comme d'excellents candidats pour des applications d'électronique de puissance, pour les applications TVSAT, des stations de base terrestres et des systèmes radar à large bande de fréquence (bande L à W), et pour les applications civiles et militaires. Cependant, il reste à lever certains verrous concernant des problèmes de fiabilité de ces dispositifs, qui affectent la durée de vie élevée attendue ; l'amélioration de la robustesse de ces technologies reste une phase critique à étudier malgré les progrès déjà réalisés. Plusieurs paramètres de fabrication affectent la fiabilité, tels que la passivation de la surface, le plateau de champ, le procédé de dépôt de la grille. Il est bien connu que l'étude de la fiabilité est complexe et ne pourra jamais être totalement accomplie, cependant les limites escomptées pour une exploitation raisonnable des filières GaN laissent entrevoir la possibilité de réels progrès dans ce domaine pour assoir le positionnement de ces technologies vis à vis des solutions concurrentes. Ce manuscrit de thèse présente les outils de diagnostic et les procédures de mesures associées développés pour mieux comprendre les mécanismes de dégradation sous-jacents de ces dispositifs. Les mesures électriques DC et pulsées à différentes températures sont présentées en premier lieu. Pour obtenir des informations au niveau microscopique sur la fluctuation des porteur, Intensive and rapid development of GaN-based HEMT devices has been largely promoted by their extreme attraction and intrinsic capabilities for proposing high performances (high power and PAE, high frequency, moderate HF noise...) and for operating under different extreme conditions and harsh environment (thermal fluctuations, jamming, ionizing radiations...) over more traditional competitive technologies (Si, GaAs). More than ever, AlGaN/GaN HEMTs are considered as promising technology to replace the GaAs, and an excellent candidate for power electronics applications, for TVSAT applications, terrestrial base stations and radar transceivers operating over large frequency band (from L to W-band) for both civil and military applications. However, some remaining problems concerning the reliability of the devices affect the expected elevated lifetime, and the improvement of the robustness of these technologies stay a questionable phase to study despite the progress already made. Several fabrication parameters could impact the reliability such as surface passivation, field plate, gate deposition process (presence of spontaneous and piezoelectrical effects). It is well known that the reliability background is complex and will never be completely accomplished, but the margin between expected theoretical lifetime and results already obtained motivates efforts to give for an improved level of reliability. The following manuscript presents diagnostic tools and associated measurement procedures to better understand the underlying degradation mechanisms of such devices. Electrical DC and pulsed measurements at different temperatures are presented first. To get more microscopic information about the carrier flow and the defects in the active and passive areas of the device, low frequency noise measurements on the gate and drain currents are investigated under open drain (Schottky diode) and when the transistor is biased in saturated region. An electro-optical technique is also ap

Published
2013

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