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Transparent and conductive ZnO:Al thin films have been deposited by a reactive magnetron sputtering using the layer‐by‐layer growth method. The grown Al‐doped ZnO films of about 100 nm thickness on Si and glass substrates have been investigated with respect to the crystalline phase by X‐ray diffraction (XRD), surface morphology by atomic force microscopy (AFM), chemical bonding, and the electronic structure by measuring the X‐ray photoelectron spectroscopy (XPS) core‐level and valence‐band spectra of the ZnO:Al films. The influence of Al content in ZnO films on structure, optical, and XPS spectra, transport parameters n, μ, ρ have been studied. The weak temperature dependence of conductivity in the temperature range 77–300 K suggests that Al3+ is a fully ionized impurity that provides the values of electron concentration in the range 7 × 1019–2.44 × 1020 cm−3. Al electroactivity (EA) in ZnO films is diminishing with Al content increases. A strong decrease in Al EA from 60% to 30% is observed for ZnO:Al films within 0.93–1.22 at% of Al that indicates on the enhancement of concentration of acceptor native and/or neutral complex defects in ZnO. [ABSTRACT FROM AUTHOR]

The following section contains invited and contri- buted papers presented at Symposium K 'ZnO - Material science from research to electronic applications' of EMRS Fall Meeting held in Warsaw, Poland, September 16-20, 2013. The symposium was organized by the principal organizer George Lashkarev (Institute for Problems of Material Science, Ukraine) and four co-organizers: Robert Triboulet (CNRS/GEMAC, Univ. of Versailles, France), Robert Kudra-wiec (Institute of Physics, Wrocław University of Technology, Poland), Serhii Trushkin (Institute of Physics PAS, Poland) and Rositza Yakimova (Department of Physics, Chemistry and Biology (IFM), Sweden). Symposium K gathered 82 participants from 28 countries with 10 invited talks, 25 oral presentations and 42 posters. The symposium was focused on the fundamental understanding of growth processes of ZnO films and structures, the role of point defects and impurities, electrical and optical properties and priority applications of ZnO in electronics and optoelectronics. The main idea of Symposium K was to narrow the evident gap between the research groundwork on ZnO and its possible industrial introduction. We consider this symposium as the next turn in the direction of wide applications of ZnO in the future. We take this opportunity to thank the colleagues who acted as scientific committee members and program committee members as well as the presenters who submitted a manuscript for publication and referees who ensured the scientific quality of the proceedings. [ABSTRACT FROM AUTHOR]