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21 results on '"Kasbari, Abed-Elhak"'

1. UWB patch antenna design and realization in the bandwidth 780 MHz to 4.22 GHz

Author

Benkalfate, Chemseddine, Feham, Mohammed, Ouslimani, Achour, and Kasbari, Abed-Elhak

Subjects
Computer Science - Networking and Internet Architecture, Electrical Engineering and Systems Science - Signal Processing
Abstract

The proposed UWB antenna covers mobile communications (GSM, EDG, UMTS(3G), LTE(4G)) and wireless networks (WIFI, WiMAX), within a theoretical bandwidth defined from 780MHz to 4.22GHz. The UWB antenna is designed and realized on a FR-4 substrate with an electrical permittivity of 4.4. It presents a 98.75% average analytical efficiency and an omnidirectional radiation within the previous bandwidth. The impedance excitation port is fixed at 50 Ohm according with the SMA impedance used in the practical part. The measured results are in good agreement with those obtained using CST and ADS softwares. The measured bandwidth, defined from 980MHz to 4.2GHz, presents an efficiency of 94.14%. Furthermore, the practical radiation diagram and the excitation port impedance stay the same as that the simulation one., Comment: 10 Pages, 13 Figures

Published
2022

11. Design of high-speed master--slave D-type flip-flop in InP DHBT technology

Author

Kasbari, Abed-Elhak, Andre, Philippe, Konczykowska, Agnieszka, Riet, Muriel, Blayac, Sylvain, Ouslimani, Habiba, and Godin, Jean

Subjects
Fiber optics -- Research, Telecommunication -- Research, Bipolar integrated circuits -- Design and construction, Indium -- Usage, SONET (Telecommunications), Fiber optics, Communications technology, SONET (Computer network protocol), Business, Computers, Electronics, Electronics and electrical industries
Abstract

In this paper, we present some design problems of high-speed master-slave D-type flip-flop (MS D-FF). Essential to the long-haul optical-fiber communication systems, this circuit is critical since it operates at the highest clock frequency for a given bit rate. We discuss specific aspects of electrical design of such a circuit and underline some important points for the layout of gigabit circuits. In particular, we tackle the problem of ringing, which can appear in emitter-follower structures using the fast transistors necessary for high-speed operation. We have pointed out also some difficulties of circuit layout, particularly certain connections that can cause serious ill functioning. The MS D-FF was fabricated in our self-aligned InP double heterojunction-bipolar-transistor technology. On-wafer characterizations at 40 Gb/s show 75% horizontal and 68% vertical eye opening. Index Terms--Bipolar integrated circuits, flip-flops, indium compounds, SONET, very high-speed integrated circuits.

Published
2002

12. Design of a novel Equalizer-Driver with 3.7 Vpp diff linear output swing and 16 dB of peaking gain at 55 GHz for 64 GBd PAM-4 optical communication transmitters

Author

Hersent Romain, Ouslimani Achour, and Kasbari Abed-Elhak

Subjects
Physics, 020210 optoelectronics & photonics, Differential gain, Bessel filter, Bandwidth (signal processing), 0202 electrical engineering, electronic engineering, information engineering, Optical communication, Electronic engineering, Equalizer, 02 engineering and technology, Swing, Cutoff frequency, Efficient energy use
Abstract

This paper introduces a novel Equalizer-Driver that combines equalizing and driving functionalities in a single function aimed at increasing the bandwidth and energy efficiency of electro-optical (E/O) transmitters. Implemented in III-V Lab’s 0.7-µm InP DHBT technology, the Equalizer-Driver exhibits in full EM-circuit co-simulation 13 dB of differential gain (S d2d1 ) at 10 MHz and 16 dB of peaking gain at 55 GHz, for a total intrinsic -3 dB-bandwidth over 100 GHz. Transient simulations show it is able to provide an equalized and amplified 3.7-V pp diff linear output signal in PAM4 at 64 GBd, from an input signal filtered by a Bessel filter with a 17-GHz -3 dB-bandwidth. Consuming 1.2 W at its maximum 3.7-V pp diff linear output swing, it is well suited for bandwidth limited optical transmitters at 64 GBd and beyond.

Published
2018

13. Real-time control and management plane for edge-cloud deterministic and dynamic networks.

Author

Szczerban, Mijail, Benzaoui, Nihel, Estaran, Jose, Mardoyan, Haik, Ouslimani, Achour, Kasbari, Abed-Elhak, Bigo, Sebastien, and Pointurier, Yvan

Abstract

The dynamicity of today's optical networks is far from its potential. Optical components, such as fast-tunable lasers or semiconductor optical amplifiers, can react on a nanosecond time scale, while the reconfiguration time of optical networks is many orders of magnitude larger, normally above a hundreds of milliseconds timescale. In this work, we address this gap with real-time control plane strategies that enhance the responsiveness of optical networks, specifically in the context of time-critical applications where service determinism is of paramount importance. This context represents an additional challenge since the infrastructure necessary to provide time-wise guarantees increases the complexity of the system under control. We describe in detail the real-time control plane for deterministic and dynamic networks and assess its value through experimental evaluation for the first time to our knowledge of a complete real-time control plane within a multinetwork segment testbed. We prove submillisecond overall reconfiguration time for multinetwork segment environments spanning distances of the order of tens of kilometers. [ABSTRACT FROM AUTHOR]

Published
2020
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14. Temperature effects on the Drain Current in GaN Dual-Gate MESFET using Two-Dimensional Device Simulation

Author

DJELTI, Hamida, FEHAM, Mohammed, OUSLIMANI, Achour, and KASBARI, Abed-Elhak

Subjects
DGMESFET, Temperature, GaN, Steady-state
Abstract

Temperature dependence of the GaN-Dual-Gate MESFET (GaNDGMESFET) DC-characteristics is investigated using two dimensional numerical simulations. Differential equations derived from a Hydrodynamic electron transport model describe the physical proprieties of the device. Simulation results over a wide range of temperature from 300 K to 900 K performed on an industrial software Atlas from SILVACO are presented for a GaN-DGMESFET with a gate length of 0.5 µm. The results show a significant degradation of the DC characteristics. Variation of the electron temperature with the drain-source voltage (Vds) is studied and a large temperature is observed for Vds > 1 V. At low drain-source voltage (Vds < 1 V) the electron temperature is closed to the lattice temperature. IJCSI International Journal of Computer Science Issues, Vol. 9, Issue 1, No 3, January 2012.

Published
2012

21. Over 70-GHz 4.9-V ppdiff InP linear driver for next generation coherent optical communications

Author

Hersent Romain, Nodjiadjim Virginie, Ouslimani Achour, Dupuy Jean-Yves, Konczykowska Agnieszka, Riet Muriel, Blache Fabrice, Mismer Colin, Jorge Filipe, and Kasbari Abed-Elhak

Subjects
Physics, Differential gain, Power consumption, business.industry, 020208 electrical & electronic engineering, Bandwidth (signal processing), 0202 electrical engineering, electronic engineering, information engineering, Optical communication, Optoelectronics, 020206 networking & telecommunications, 02 engineering and technology, business
Abstract

This paper presents a 86.8-GHz bandwidth 4.9-V ppdiff (peak-to-peak differential) linear electro-optical (E/O) modulator driver fabricated in III-V Lab’s 0.7-µm InP DHBT technology. On-wafer measurements exhibit a differential gain of 15.1 dB at 0.2 GHz and a 4.1-dB peaking gain at 51 GHz. Record bandwidth and maximum peaking-frequency, for a lumped linear driver, are obtained. Very high quality 100-Gb/s NRZ and 50GBd PAM-4 output eye diagrams have been measured. A good measurement and EM-simulation agreement is shown. The InP linear driver power consumption is respectively 0.94 and 1.2 W at 4.1 and 4.9-V ppdiff output swings.

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