134 results on '"Kasu, M."'
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2. Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector
3. Forensic parameters and genetic structure based on Y-chromosome short tandem repeats in Lesotho populations
4. Photonic Devices
5. Electronic and surface properties of H-terminated diamond surface affected by NO 2 gas
6. Beryllium-doped single-crystal diamond grown by microwave plasma CVD
7. Molecular beam epitaxial growth of hexagonal boron nitride on Ni(1 1 1) substrate
8. Fabrication and Characterization of GaN/Diamond bonding interface
9. High-pressure and high-temperature annealing of diamond ion-implanted with various elements
10. Thick diamond layers angled by polishing to reveal defect and impurity depth profiles
11. High-pressure and high-temperature annealing effects of boron-implanted diamond
12. Origin of growth defects in CVD diamond epitaxial films
13. Diamond-based RF power transistors: Fundamentals and applications
14. High-pressure and high-temperature annealing effects on CVD homoepitaxial diamond films
15. Characterization of high-quality polycrystalline diamond and its high FET performance
16. Temperature dependent DC and RF performance of diamond MESFET
17. High RF output power for H-terminated diamond FETs
18. Electronic surface barrier characteristics of H-terminated and surface conductive diamond
19. Microwave performance evaluation of diamond surface channel FETs
20. Diamond-based electronics for RF applications
21. Influence of epitaxy on the surface conduction of diamond film
22. Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
23. Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate.
24. Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO2 Hole Doping Effect -
25. Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy.
26. Thermally Stable Operation of Diamond Field-Effect Transistors by NO2 Adsorption and Al2O3 Passivation
27. Coherent coupling of a superconducting flux qubit to an electron spin ensemble in diamond
28. First-Principles Study of Electronic Structures of AlN/GaN Superlattices
29. RF power characteristics of high-thermal-efficiency AlGaN/GaN HEMTs on diamond
30. Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE
31. Nucleus and Spiral Growth of GaN Studied by Selective-Area Metalorganic Vapor Phase Epitaxy
32. Electronic and surface properties of H-terminated diamond surface affected by NO2 gas
33. Hexagonal AlN (0001) heteroepitaxial growth on cubic diamond (001)
34. High-temperature Operation of Boron-implanted Diamond FETs
35. Back Cover (Phys. Status Solidi A 9/2009)
36. Identification of etch-pit crystallographic faces induced on diamond surface by H2 /O2 etching plasma treatment
37. Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
38. Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate
39. Improvements in Thermal Stability of Hydrogen-terminated Diamond FETs
40. RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
41. High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
42. Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination
43. Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
44. 2 W∕mm output power density at 1 GHz for diamond FETs
45. Temperature dependent characteristics of diamond MESFET
46. Reduction of threading dislocations in crack-free AlGaN by using multiple thin SixAl1−xN interlayers
47. Formation of stacking faults containing microtwins in (111) chemical-vapor-deposited diamond homoepitaxial layers
48. Photonic Devices.
49. Intentional Control of n-type Conduction for Si-doped AlN and AlxGa1?xN with High Al Content
50. Spontaneous Ridge Formation and Its Effect on Field Emission of Heavily Si-Doped AlN
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