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A circular defect in 2D photonic crystal (CirD) lasers is developed, which has the potential to achieve a target communication density of 10 Pbps cm−2for intrachip optical communications by vertical current injection. The AlGaOxcladding layer's oxidation width strongly influences the device's light confinement and electronic resistance. Herein, samples with different oxidation widths are fabricated and the relationship between threshold power and oxidation width through photoexcitation is revealed. The optimal range of the oxidation width is found to be 349–439 nm, which can ensure low electronic resistance and low threshold power. Circular defects in 2D photonic crystal (CirD) lasers are designed. By optical measurement of samples with different AlGaOx oxidation widths, optimal range of the oxidation width is clarified. It shows that CirD lasers with the optimal ranges of oxidation width have low electronic resistance and low threshold power, and they have the potential to achieve optical communication for short distances.