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The ground state of monolayer 1T'-WTe2 has been a target of intensive debate on whether or not it is a two-dimensional topological insulator (2D TI) associated with exciton formation. We investigated the band structure of an epitaxial monolayer 1T'-WTe2 film grown on graphene/SiC(0001) in a wide temperature range of T = 40 - 400 K by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level (EF) slightly away from the {\Gamma} point, together with four hole bands below EF just at the {\Gamma} point. This signifies an indirect band gap exceeding 0.1 eV in support of the 2D-TI phase with the inverted band structure. We uncovered an unexpectedly large downward shift of valence bands upon cooling, accompanied with an upward shift of the conduction band. Comparison of the ARPES-derived band structure with first-principles band calculations suggests that the observed band shift is ascribed to the systematic local atomic distortion of tungsten atoms, which should be incorporated into the interpretation of unusual transport properties of 1T'-WTe2.

We selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T') WTe2 on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, has revealed several drastic differences between these two polymorphs. The 1T' phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and the band splitting at the K/K' point. The present results pave a pathway toward developing nanoelectronic devices based with WTe2.

Topotactic chemical reaction (TCR) is a chemical process that transforms one crystalline phase to another while maintaining one or more of the original structural frameworks, typically induced by the local insertion, removal, or replacement of atoms in a crystal. The utilization of TCR in atomic-layer materials and surfaces of bulk crystals leads to exotic quantum phases, as highlighted by the control of topological phases, the emergence of two-dimensional (2D) superconductivity, and the realization of 2D ferromagnetism. Advanced surface-sensitive spectroscopies such as angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) are leading techniques to visualize the electronic structure of such exotic states and provide us a guide to further functionalize material properties. In this review article, we summarize the recent progress in this field, with particular emphasis on intriguing results obtained by combining spectroscopies and TCR in thin films., Comment: 23 pages, 10 figures

Interplay between fermiology and electron correlation is crucial for realizing exotic quantum phases. Transition-metal dichalcogenide (TMD) 1T-TaS2 has sparked a tremendous attention owing to its unique Mott-insulating phase coexisting with the charge-density wave (CDW). However, how the fermiology and electron correlation are associated with such properties has yet to be claried. Here we demonstrate that monolayer 1T-NbTe2 is a new class of two-dimensional TMD which has the star-of-David lattice similarly to bulk TaS2 and isostructural monolayer NbSe2, but exhibits a metallic ground state with an unusual lattice periodicity root19xroot19 characterized by the sparsely occupied star-of-David lattice. By using angle-resolved photoemission and scanning-tunneling spectroscopies in combination with first-principles band-structure calculations, we found that the hidden Fermi-surface nesting and associated CDW formation are a primary cause to realize this unique correlated metallic state with no signature of Mott gap. The present result points to a vital role of underlying fermiology to characterize the Mott phase of TMDs., Comment: To be published in Physical Review B

Kagome lattices offer a fertile ground to explore exotic quantum phenomena associated with electron correlation and band topology. The recent discovery of superconductivity coexisting with charge-density wave (CDW) in the kagome metals KV3Sb5, RbV3Sb5, and CsV3Sb5 suggests an intriguing entanglement of electronic order and superconductivity. However, the microscopic origin of CDW, a key to understanding the superconducting mechanism and its possible topological nature, remains elusive. Here, we report angle-resolved photoemission spectroscopy of KV3Sb5 and demonstrate a substantial reconstruction of Fermi surface in the CDW state that accompanies the formation of small three-dimensional pockets. The CDW gap exhibits a periodicity of undistorted Brillouin zone along the out-of-plane wave vector, signifying a dominant role of the in-plane inter-saddle-point scattering to the mechanism of CDW. The characteristics of experimental band dispersion can be captured by first-principles calculations with the inverse star-of-David structural distortion. The present result indicates a direct link between the low-energy excitations and CDW, and puts constraints on the microscopic theory of superconductivity in alkali-metal kagome lattices., Comment: 25 pages, 3 figures

Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $\mu$m (horizontal) x 12 $\mu$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal., Comment: 21 pages, 8 figures

Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature TCDW-Mott, whereas this was difficult for bulk TMDs with TCDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe2. Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe2 compared to NbSe2, originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature.

We have performed angle-resolved photoemission spectroscopy on EuIn2As2 which is predicted to be an axion insulator in the antiferromagnetic state. By utilizing soft-x-ray and vacuum-ultraviolet photons, we revealed a three-dimensional hole pocket centered at the Gamma point of bulk Brillouin zone together with a heavily hole-doped surface state in the paramagnetic phase. Upon entering the antiferromagnetic phase, the band structure exhibits a marked reconstruction characterized by the emergence of a "M"-shaped bulk band near the Fermi level. The qualitative agreement with first-principles band-structure calculations suggests the occurrence of bulk-band inversion at the Gamma point in the antiferromagnetic phase. We suggest that EuIn2As2 provides a good opportunity to study the exotic quantum phases associated with possible axion-insulator phase., Comment: 8 pages, 5 figures