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We report a twisted triple bilayer graphene platform consisting of three units of Bernal bilayer graphene (BLG) consecutively twisted at 1.49{\deg} and 1.68{\deg}. We observe inter-moir\'e Hofstadter butterflies from two co-existing moir\'e superlattices and a Hofstadter butterfly from reconstructed moir\'e-of-moir\'e lattice, and show that their Brown-Zak (BZ) oscillations quantitatively agree with each other, both evidencing strong atomic reconstruction with a lattice constant of 18.1 nm. We further demonstrate such atomic reconstruction strongly enhances the Berry curvature of each moir\'e and moir\'e-of-moir\'e band-insulator state, characterized by measured strong non-local valley Hall effect (VHE) that sensitively depends on the inter-moir\'e competition strength, tunable by manipulating the out-of-the-plane carrier distribution which controls the magnitude of the valley currents. Our study sheds new light on the microscopic mechanism of atomic and electronic reconstruction in twisted-multilayer systems, by investigating novel emergent quantum phenomena of reconstructed quasi-crystalline moir\'e-of-moir\'e superlattice, including a new type of moir\'e-of-moir\'e band-insulator states and atomically enhanced moir\'e Berry curvature. We show that the reconstructed electronic band can be versatilely tuned by electrostatics, providing an approach towards engineering the band structure and its topology for a novel quantum material platform with designer electrical and optical properties.

Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier density. Therefore, plasmon polaritons are expected to be tuned when in proximity to polar materials since the carrier density is tuned by an electrostatic potential; conversely, the plasmon polariton response might enable the sensing of polarization. Here, we use infrared nano-imaging and nano-photocurrent measurements to investigate heterostructures composed of graphene and twisted hexagonal boron nitride (t-BN), with alternating polarization in a triangular network of moir\'e stacking domains. We observe that the carrier density and the corresponding plasmonic response of graphene are modulated by polar domains in t-BN. In addition, we demonstrate that the nanometer-wide domain walls of graphene moir\'es superlattices, created by the polar domains of t-BN, provide momenta to assist the plasmonic excitations. Furthermore, our studies establish that the plasmon of graphene could function as a delicate sensor for polarization textures. The evolution of polarization textures in t-BN under uniform electric fields is tomographically examined via plasmonic imaging. Strikingly, no noticeable polarization switching is observed under applied electric fields up to 0.23 V/nm, at variance with transport reports. Our nano-images unambiguously reveal that t-BN with triangular domains acts like a ferrielectric, rather than ferroelectric claimed by many previous studies., Comment: 41 pages, 20 figures

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the nanoribbon are bonded to the same chemical species, either boron or nitrogen atoms. Using ab initio and mean-field Hubbard model calculations, we reveal the emergence of one-dimensional magnetic conducting channels at these interfaces. These channels originate from the energy shift of the magnetic interface states that is induced by charge transfer between the nanoribbon and hexagonal boron nitride. We further address the response of these heterojunctions to external electric and magnetic fields, demonstrating the tunability of energy and spin splittings in the electronic structure. Our findings establish that zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions are a suitable platform for exploring and engineering spin transport in the atomically thin limit, with potential applications in integrated spintronic devices

Two-dimensional (2D) materials that exhibit spontaneous magnetization, polarization or strain (referred to as ferroics) have the potential to revolutionize nanotechnology by enhancing the multifunctionality of nanoscale devices. However, multiferroic order is difficult to achieve, requiring complicated coupling between electron and spin degrees of freedom. We propose a universal method to engineer multiferroics from van der Waals magnets by taking advantage of the fact that changing the stacking between 2D layers can break inversion symmetry, resulting in ferroelectricity and possibly magnetoelectric coupling. We illustrate this concept using first-principles calculations in bilayer NiI$_2$, which can be made ferroelectric upon rotating two adjacent layers by $180^{\circ}$ with respect to the bulk stacking. Furthermore, we discover a novel multiferroic order induced by interlayer charge transfer which couples the interlayer spin order and electronic polarization. Our approach is not only general but also systematic, and can enable the discovery of a wide variety of 2D multiferroics., Comment: Fixed a typo in the title

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ranges. While bulk group-III nitrides and their alloys have been extensively studied in the UWBG realm, their two-dimensional counterparts remain unexplored. Here, we examine the stability and electronic properties of monolayers of ordered boron-based group-III nitride alloys with general formula BxM1-xN, where M = Al, Ga. On the basis of ab initio calculations we identify a number of energetically and dynamically stable structures. Instrumental to their stability is a previously overlooked out-of-plane displacement (puckering) of atoms, which induces a polar ordering and antiferroelectric ground state. Our findings reveal the energy barrier between metastable ferroelectric states is lowered by successive switching of out-of-plane displacements through an antiferroelectric state., Comment: 18 pages, 3 figures

Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moir\'e substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moir\'e potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60{\deg}-twisted bilayer BN provides a unique platform for studying the moir\'e structural effect without the contribution from electrostatic moir\'e potentials. Tunable moir\'e polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures., Comment: 21 pages, 11 figures

Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moir\'e barriers in a tBLG device, utilizing the band-insulator gap of the moir\'e superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moir\'e tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moir\'e collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.

Material characterization in nano-mechanical tests requires precise interatomic potentials for the computation of atomic energies and forces with near-quantum accuracy. For such purposes, we develop a robust neural-network interatomic potential (NNIP), and we provide a test for the example of molecular dynamics (MD) nanoindentation, and the case of body-centered cubic crystalline molybdenum (Mo). We employ a similarity measurement protocol, using standard local environment descriptors, to select ab initio configurations for the training dataset that capture the behavior of the indented sample. We find that it is critical to include generalized stacking fault (GSF) configurations, featuring a dumbbell interstitial on the surface, to capture dislocation cores, and also high-temperature configurations with frozen atom layers for the indenter tip contact. We develop a NNIP with distinct dislocation nucleation mechanisms, realistic generalized stacking fault energy (GSFE) curves, and an informative energy landscape for the atoms on the sample surface during nanoindentation. We compare our NNIP results with nanoindentation simulations, performed with three existing potentials -- an embedded atom method (EAM) potential, a gaussian approximation potential (GAP), and a tabulated GAP (tabGAP) potential -- that predict different dislocation nucleation mechanisms, and display the absence of essential information on the shear stress at the sample surface in the elastic region. We believe that these features render specialized NNIPs essential for simulations of nanoindentation and nano-mechanics with near-quantum accuracy.

We fabricate a twisted trilayer graphene device with consecutive twist angles of 1.33 and 1.64 degrees, in which we electrostatically tune the electronic states from each of the two co-existing moir\'e superlattices and the interactions between them. When both moir\'e superlattices contribute equally to electrical transport, we report a new type of inter-moir\'e Hofstadter butterfly. Its Brown-Zak oscillation corresponds to one of the intermediate quasicrystal length scales of the reconstructed moir\'e of moir\'e (MoM) superlattice, shedding new light on emergent physics from competing atomic orders.

An accurate description of the low-energy electronic bands in twisted bilayer graphene (tBLG) is of great interest due to their relation to correlated electron phases, such as superconductivity and Mott-insulator behavior at half-filling. The paradigmatic model of Bistritzer and MacDonald [PNAS 108, 12233 (2011)], based on the moir\'e pattern formed by tBLG, predicts the existence of "magic angles" at which the Fermi velocity of the low-energy bands goes to zero, and the bands themselves become dispersionless. Here, we reexamine the low-energy bands of tBLG from the ab initio electronic structure perspective, motivated by features related to the atomic relaxation in the moir\'e pattern, namely circular regions of AA stacking, triangular regions of AB/BA stacking and domain walls separating the latter. We find that the bands are never perfectly flat and the Fermi velocity never vanishes, but rather a "magic range" exists where the lower band becomes extremely flat and the Fermi velocity attains a non-zero minimum value. We propose a simple $(2+2)$-band model, comprised of two different pairs of orbitals, both on a honeycomb lattice: the first pair represents the low-energy bands with high localization at the AA sites, while the second pair represents highly dispersive bands associated with domain-wall states. This model gives an accurate description of the low-energy bands with few (13) parameters which are physically motivated and vary smoothly in the magic range. In addition, we derive an effective two-band hamiltonian which also gives an accurate description of the low-energy bands. This minimal two-band model affords a connection to a Hubbard-like description of the occupancy of sub-bands and can be used a basis for exploring correlated states., Comment: Accepted in Phys. Rev. B

Materials design has traditionally evolved through trial-error approaches, mainly due to the non-local relationship between microstructures and properties such as strength and toughness. We propose 'alloy informatics' as a machine learning based prototype predictive approach for alloys and compounds, using electron charge density profiles derived from first-principle calculations. We demonstrate this framework in the case of hydrogen interstitials in face-centered cubic crystals, showing that their differential electron charge density profiles capture crystal properties and defect-crystal interaction properties. Radial Distribution Functions (RDFs) of defect-induced differential charge density perturbations highlight the resulting screening effect, and, together with hydrogen Bader charges, strongly correlate to a large set of atomic properties of the metal species forming the bulk crystal. We observe the spontaneous emergence of classes of charge responses while coarse-graining over crystal compositions. Nudge-Elastic-Band calculations show that RDFs and charge features also connect to hydrogen migration energy barriers between interstitial sites. Unsupervised machine-learning on RDFs supports classification, unveiling compositional and configurational non-localities in the similarities of the perturbed densities. Electron charge density perturbations may be considered as bias-free descriptors for a large variety of defects.

Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and $\alpha$-RuCl$_3$, which dopes the graphene positively, greatly favors the intercalation of lithium ions into graphene-based vdW heterostructures. We systematically tune this effect on Li$^+$ ion intercalation, modulating the intercalation potential, by using varying thicknesses of hexagonal boron nitride (hBN) as spacer layers between graphene and $\alpha$-RuCl$_3$. Confocal Raman spectroscopy and electronic transport measurements are used to monitor electrochemical intercalation and density functional theory computations help quantify charge transfer to both $\alpha$-RuCl$_3$ and graphene upon Li intercalation. This work demonstrates a versatile approach for systematically modulating the electrochemical intercalation behavior of two-dimensional layers akin to electron donating/withdrawing substituent effects used to tune molecular redox potentials.

Twisted bilayer graphene (tBLG) has emerged as a promising platform to explore exotic electronic phases. However, the formation of moir\'e patterns in tBLG has thus far been confined to the introduction of twist angles between the layers. Here, we propose heterostrained bilayer graphene (hBLG), as an alternative avenue to access twist-angle-free moir\'e physics via lattice mismatch. Using atomistic and first-principles calculations, we demonstrate that uniaxial heterostrain can promote isolated flat electronic bands around the Fermi level. Furthermore, the heterostrain-induced out-of-plane lattice relaxation may lead to a spatially modulated reactivity of the surface layer, paving the way for the moir\'e-driven chemistry and magnetism. We anticipate that our findings can be readily generalized to other layered materials.

Electronic ferroelectricity represents a new paradigm where spontaneous symmetry breaking driven by electronic correlations, in contrast to traditional lattice-driven ferroelectricity, leads to the formation of electric dipoles. Despite the potential application advantages arising from its electronic nature, switchable electronic ferroelectricity remains exceedingly rare. Here, we report the discovery of an electronic ratchet effect that manifests itself as switchable electronic ferroelectricity in a layer-contrasting graphene-boron nitride moir\'e heterostructure. Our engineered layer-asymmetric moir\'e potential landscapes result in layer-polarized localized and itinerant electronic subsystems. At particular fillings of the localized subsystem, we find a ratcheting injection of itinerant carriers in a non-volatile manner, leading to a highly unusual ferroelectric response. Strikingly, the remnant polarization can be stabilized at multiple (quasi-continuous) states with behavior markedly distinct from known ferroelectrics. Our experimental observations, simulations, and theoretical analysis suggest that dipolar excitons are the driving force and elementary ferroelectric units in our system. This signifies a new type of electronic ferroelectricity where the formation of dipolar excitons with aligned moments generates a macroscopic polarization and leads to an electronically-driven ferroelectric response, which we term excitonic ferroelectricity. Such new ferroelectrics, driven by quantum objects like dipolar excitons, could pave the way to innovative quantum analog memory and synaptic devices.

In this work, we develop a twist-dependent electrochemical activity map, combining a tight-binding electronic structure model with modified Marcus-Hush-Chidsey kinetics in trilayer graphene. We identify a counterintuitive rate enhancement region spanning the magic angle curve and incommensurate twists of the system geometry. We find a broad activity peak with a ruthenium hexamine redox couple in regions corresponding to both magic angles and incommensurate angles, a result qualitatively distinct from the twisted bilayer case. Flat bands and incommensurability offer new avenues for reaction rate enhancements in electrochemical transformations., Comment: 6 pages, 4 figures, Supporting Information

Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that recently fabricated heterojunctions of zigzag nanoribbons embedded in two-dimensional hexagonal boron nitride are half-semimetallic, featuring fully spin-polarized Dirac points at the Fermi level. The half-semimetallicity originates from the transfer of charges from hexagonal boron nitride to the embedded graphene nanoribbon. These charges give rise to opposite energy shifts of the states residing at the two edges while preserving their intrinsic antiferromagnetic exchange coupling. Upon doping, an antiferromagnetic-to-ferrimagnetic phase transition occurs in these heterojunctions, with the sign of the excess charge controlling the spatial localization of the net magnetic moments. Our findings demonstrate that such heterojunctions realize tunable one-dimensional conducting channels of spin-polarized Dirac fermions that are seamlessly integrated into a two-dimensional insulator, thus holding promise for the development of carbon-based spintronics.

CoSn is a prototypical kagome compound showing lattice-born flat bands with suppressed bandwidth over large parts of the Brillouin zone. Here, by means of time- and angle-resolved photoelectron spectroscopy, we provide direct evidence of the response to photoexcitation of the flat bands, that underlie information about localization in real space. In particular, we detect a sudden shift and broadening of the flat bands, while after one picosecond only a broadening survives. We ascribe both these effects to an ultrafast disruption of electron localization, which renormalizes the effective electron-electron interaction and affects the flat band dispersion. Since both variations are in the order of a few meV, our measurements suggest that the flat bands are resilient to near-infrared photoexcitation.

Recently, topologically nontrivial polarization textures have been predicted and observed in nanoscale systems. While these polarization textures are interesting and promising in terms of applications, their topology in general is yet to be fully understood. For example, the relation between topological polarization structures and band topology has not been explored, and polar domain structures are typically considered in topologically trivial systems. In particular, the local polarization in a crystal supercell is not well-defined, and typically calculated using approximations which do not satisfy gauge invariance. Furthermore, local polarization in supercells is typically approximated using calculations involving smaller unit cells, meaning the connection to the electronic structure of the supercell is lost. In this work, we propose a definition of local polarization which is gauge invariant and can be calculated directly from a supercell without approximations. We show using first-principles calculations for commensurate bilayer hexagonal boron nitride that our expressions for local polarization give the correct result at the unit cell level, which is a first approximation to the local polarization in a moir\'e superlattice. We also illustrate using an effective model that the local polarization can be directly calculated in real space. Finally, we discuss the relation between polarization and band topology, for which it is essential to have a correct definition of polarization textures., Comment: 16 pages, 6 figures

Plasmons, collective excitations of electrons in solids, are associated with strongly confined electromagnetic fields, with wavelengths far below the wavelength of photons in free space. This strong confinement promises the realization of optoelectronic devices that could bridge the size difference between photonic and electronic devices. However, despite decades of research in plasmonics, many applications remain limited by plasmonic losses, thus motivating a search for new engineered plasmonic materials with lower losses. A promising pathway for low-loss plasmonic materials is the engineering of materials with flat and energetically isolated metallic bands, which can strongly limit phonon-assisted optical losses, a major contributor to short plasmonic lifetimes. Such electronic band structures may be created by judiciously introducing an ordered lattice of defects in an insulating host material. Here, we explore this approach, presenting several low-loss, highly-confined, and tunable plasmonic materials based on arrays of carbon substitutions in hexagonal boron nitride (hBN) monolayers. From our first-principles calculations based on density functional theory (DFT), we find plasmonic structures with mid-infrared plasmons featuring very high confinements ($\lambda_{\text{vacuum}}/\lambda_{\text{plasmon}}$ exceeding 2000) and quality factors in excess of 1000. We provide a systematic explanation of how crystal structure, electronic bandwidth, and many-body effects affect the plasmonic dispersions and losses of these materials. The results are thus of relevance to low-loss plasmon engineering in other flat band systems.

We show that pressure applied to twisted WSe$_2$ can enhance the many-body gap and region of stability of a fractional Chern insulator at filling $\nu = 1/3$. Our results are based on exact diagonalization of a continuum model, whose pressure-dependence is obtained through {\it ab initio} methods. We interpret our results in terms of a {\it magic line} in the pressure-{\it vs}-twist angle phase diagram: along the magic line, the bandwidth of the topmost moir\'e valence band is minimized while simultaneously its quantum geometry nearly resembles that of an ideal Chern band. We expect our results to generalize to other twisted transition metal dichalcogenide homobilayers., Comment: 11 pages, 9 figures

Thermoelectrics are a promising class of materials for renewable energy owing to their capability to generate electricity from waste heat, with their performance being governed by a competition between charge and thermal transport. A detailed understanding of energy transport at the nanoscale is thus of paramount importance for developing efficient thermoelectrics. Here, we provide a comprehensive overview of the methodologies adopted for the computational design and optimization of thermoelectric materials from first-principles calculations. First, we introduce density-functional theory, the fundamental tool to describe the electronic and vibrational properties of solids. Next, we review charge and thermal transport in the semiclassical framework of the Boltzmann transport equation, with a particular emphasis on the various scattering mechanisms between phonons, electrons, and impurities. Finally, we illustrate how these approaches can be deployed in determining the figure of merit of tin and germanium selenides, an emerging family of layered thermoelectrics that exhibits a promising figure of merit. Overall, this review article offers practical guidelines to achieve an accurate assessment of the thermoelectric properties of materials by means of computer simulations., Comment: 64 pages, 7 figures, revised version

We present a deep neural network (DNN)-based model (HubbardNet) to variationally find the ground state and excited state wavefunctions of the one-dimensional and two-dimensional Bose-Hubbard model. Using this model for a square lattice with $M$ sites, we obtain the energy spectrum as an analytical function of the on-site Coulomb repulsion, $U$, and the total number of particles, $N$, from a single training. This approach bypasses the need to solve a new hamiltonian for each different set of values $(U,N)$. Using \texttt{HubbardNet}, we identify the two ground state phases of the Bose-Hubbard model (Mott insulator and superfluid). We show that the DNN-parametrized solutions are in excellent agreement with results from the exact diagonalization of the hamiltonian, and it outperforms exact diagonalization in terms of computational scaling. These advantages suggest that our model is promising for efficient and accurate computation of exact phase diagrams of many-body lattice hamiltonians.

Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moir\'e systems with rich correlated electron phases and moir\'e exciton phenomena. For material combinations with small lattice mismatch and twist angles as in MoSe$_2$-WSe$_2$, however, lattice reconstruction eliminates the canonical moir\'e pattern and instead gives rise to arrays of periodically reconstructed nanoscale domains and mesoscopically extended areas of one atomic registry. Here, we elucidate the role of atomic reconstruction in MoSe$_2$-WSe$_2$ heterostructures synthesized by chemical vapor deposition. With complementary imaging down to the atomic scale, simulations, and optical spectroscopy methods we identify the coexistence of moir\'e-type cores and extended moir\'e-free regions in heterostacks with parallel and antiparallel alignment. Our work highlights the potential of chemical vapor deposition for applications requiring laterally extended heterosystems of one atomic registry or exciton-confining heterostack arrays., Comment: 10 pages, 5 figures

Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a wide-bandgap semiconductor is nonetheless a crucial quantity in determining the operation of semiconductor devices and the performance of solid-state single-photon emitters embedded within the semiconductor devices. In this work we accurately compute the average electric field measured at the location of N$V^-$ charged defects for the substitutional N (N$_\text{C}$) concentration of $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ for the commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve this result by evaluating the leading-order contribution to the electric field far away from the surface, which comes from the N$_\text{C}$ defects that induce the ionization of the N$V^-$. Our results use density-functional theory (DFT) and the principle of band bending. Our work has the potential to aid both in the prediction of the functioning of semiconductor devices and in the prediction and correction of the spectral diffusion that often plagues the optical frequencies of solid-state single-photon emitters upon repeated photoexcitation measurements. Our results for the timescales involved in thermally driven charge transfer also have the potential to aid in investigations of charge dynamics.

Physics-informed neural networks have been widely applied to learn general parametric solutions of differential equations. Here, we propose a neural network to discover parametric eigenvalue and eigenfunction surfaces of quantum systems. We apply our method to solve the hydrogen molecular ion. This is an ab-initio deep learning method that solves the Schrodinger equation with the Coulomb potential yielding realistic wavefunctions that include a cusp at the ion positions. The neural solutions are continuous and differentiable functions of the interatomic distance and their derivatives are analytically calculated by applying automatic differentiation. Such a parametric and analytical form of the solutions is useful for further calculations such as the determination of force fields.

Twisted van der Waals multilayers are widely regarded as a rich platform to access novel electronic phases, thanks to the multiple degrees of freedom such as layer thickness and twist angle that allow control of their electronic and chemical properties. Here, we propose that the stacking domains that form naturally due to the relative twist between successive layers act as an additional "knob" for controlling the behavior of these systems, and report the emergence and engineering of stacking domain-dependent surface chemistry in twisted few-layer graphene. Using mid-infrared near-field optical microscopy and atomic force microscopy, we observe a selective adhesion of metallic nanoparticles and liquid water at the domains with rhombohedral stacking configurations of minimally twisted double bi- and tri-layer graphene. Furthermore, we demonstrate that the manipulation of nanoparticles located at certain stacking domains can locally reconfigure the moir\'e superlattice in their vicinity at the {\mu}m-scale. In addition, we report first-principles simulations of the energetics of adhesion of metal atoms and water molecules on the stacking domains in an attempt to elucidate the origin of the observed selective adhesion. Our findings establish a new approach to controlling moir\'e-assisted chemistry and nanoengineering., Comment: 11 pages, 3 figures

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal Boron Nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures. We present a low-energy continuum model for AB bilayer graphene encapsulated by the top and bottom layers of either hBN or graphene, with two independent twist angles. For the graphene/hBN heterostructures, we show that twist angle asymmetry leads to a layer polarization of the valence and conduction bands. We also show that an out-of-plane displacement field not only tunes the layer polarization but also flattens the low-energy bands. We extend the model to show that the electronic structures of quadrilayer graphene heterostructure consisting of AB bilayer graphene encapsulated by the top and bottom graphene layers can similarly be tuned by an external electric field.

Twisted multilayers of two-dimensional (2D) materials are an increasingly important platform for investigating quantum phases of matter, and in particular, strongly correlated electrons. The moir\'e pattern introduced by the relative twist between layers creates effective potentials of long-wavelength, leading to electron localization. However, in contrast to the abundance of 2D materials, few twisted heterostructures have been studied until now. Here we develop a first-principle continuum theory to study the electronic bands introduced by moire patterns of twisted Janus transition metal dichalcogenides (TMD) homo- and hetero-bilayers. The model includes lattice relaxation, stacking-dependent effective mass, and Rashba spin-orbit coupling. We then perform a high-throughput generation and characterization of DFT-extracted continuum models for more than a hundred possible combinations of materials and stackings. Our model predicts that the moir\'e physics and emergent symmetries depend on chemical composition, vertical layer orientation, and twist angle, so that the minibands wavefunctions can form triangular, honeycomb, and Kagome networks. Rashba spin-orbit effects, peculiar of these systems, can dominate the moir\'e bandwidth at small angles. Our work enables the detailed investigation of Janus twisted heterostructures, allowing the discovery and control of novel electronic phenomena.

We present a general method to analyze the topological nature of the domain boundary connectivity that appeared in relaxed moir\'e superlattice patterns at the interface of 2-dimensional (2D) van der Waals (vdW) materials. At large enough moir\'e lengths, all moir\'e systems relax into commensurated 2D domains separated by networks of dislocation lines. The nodes of the 2D dislocation line network can be considered as vortex-like topological defects. We find that a simple analogy to common topological systems with an $S^1$ order parameter, such as a superconductor or planar ferromagnet, cannot correctly capture the topological nature of these defects. For example, in twisted bilayer graphene, the order parameter space for the relaxed moir\'e system is homotopy equivalent to a punctured torus. Here, the nodes of the 2D dislocation network can be characterized as elements of the fundamental group of the punctured torus, the free group on two generators, endowing these network nodes with non-Abelian properties. Extending this analysis to consider moir\'e patterns generated from any relative strain, we find that antivortices occur in the presence of anisotropic heterostrain, such as shear or anisotropic expansion, while arrays of vortices appear under twist or isotropic expansion between vdW materials. Experimentally, utilizing the dark field imaging capability of transmission electron microscopy (TEM), we demonstrate the existence of vortex and antivortex pair formation in a moir\'e system, caused by competition between different types of heterostrains in the vdW interfaces. We also present a methodology for mapping the underlying heterostrain of a moir\'e structure from experimental TEM data, which provides a quantitative relation between the various components of heterostrain and vortex-antivortex density in moir\'e systems., Comment: 15 pages with 11 figures

We develop a low-energy continuum model for phonons in twisted moir\'e bilayers, based on a configuration-space approach. In this approach, interatomic force constants are obtained from density functional theory (DFT) calculations of untwisted bilayers with various in-plane shifts. This allows for efficient computation of phonon properties for any small twist angle, while maintaining DFT-level accuracy. Based on this framework, we show how the low-energy phonon modes, including interlayer shearing and layer-breathing modes, vary with the twist angle. As the twist angle decreases, the frequencies of the low-energy modes are reordered and the atomic displacement fields corresponding to phonon eigenmodes break translational symmetry, developing periodicity on the moir\'e length scale. We demonstrate the capabilities of our model by calculating the phonon properties of three specific structures: bilayer graphene, bilayer molybdenum disulfide (MoS$_2$), and molybdenum diselenide-tungsten diselenide (MoSe$_2$-WSe$_2$)., Comment: v2: Updated version accepted to Physical Review B; v3: Erratum appended

Armchair graphene nanoribbons are a highly promising class of semiconductors for all-carbon nanocircuitry. Here, we present a new perspective on their electronic structure from simple model Hamiltonians and $\textit{ab initio}$ calculations. We focus on a specific set of nanoribbons of width $n = 3p+2$, where $n$ is the number of carbon atoms across the nanoribbon axis and $p$ is a positive integer. We demonstrate that the energy-gap opening in these nanoribbons originates from the breaking of a previously unidentified hidden symmetry by long-ranged hopping of $\pi$-electrons and structural distortions occurring at the edges. This hidden symmetry can be restored or manipulated through the application of in-plane lattice strain, which enables continuous energy-gap tuning, the emergence of Dirac points at the Fermi level, and topological quantum phase transitions. Our work establishes an original interpretation of the semiconducting character of armchair graphene nanoribbons and offers guidelines for rationally designing their electronic structure.

The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total thermal conductivity, and relatively large band gap. In particular, the out-of-plane direction in GeSe presents equivalent or even higher performance than SnSe for temperatures above 500 K. By extending the analysis to 900 K, we obtained an ultrahigh value for the thermoelectric figure of merit (zT = 3.2) at the optimal hole density of 4x10^19 cm^-3. Our work provides strong motivation for continued experimental work focusing on improving the GeSe doping efficiency in order to achieve this optimal hole density., Comment: 13 pages, 7 figures

In kagome metals AV3Sb5 (A = K, Rb, Cs), three-dimensional charge order (3D-CO) is the primary instability that sets the stage for other collective orders to emerge, including unidirectional stripe order, orbital flux order, electronic nematicity, and superconductivity. Here, we use high-resolution angle-resolved photoemission spectroscopy to determine the microscopic structure of three-dimensional charge order (3D-CO) in AV3Sb5 and its interplay with superconductivity. Our approach is based on identifying an unusual splitting of kagome bands induced by 3D-CO, which provides a sensitive way to refine the spatial charge patterns in neighboring kagome planes. We found a marked dependence of the 3D-CO structure on composition and doping. The observed difference between CsV3Sb5 and the other compounds potentially underpins the double-dome superconductivity in CsV3(Sb,Sn)5 and the suppression of Tc in KV3Sb5 and RbV3Sb5. Our results provide fresh insights into the rich phase diagram of AV3Sb5., Comment: 20 pages, 5 figures

Although the unconventional $\pi$-magnetism at the zigzag edges of graphene holds promise for a wide array of applications, whether and to what degree it plays a role in their chemistry remains poorly understood. Here, we investigate the addition of a hydrogen atom $-$ the simplest yet the most experimentally relevant adsorbate $-$ to zigzag graphene nanoribbons (ZGNRs). We show that the $\pi$-magnetism governs the chemistry of ZGNRs, giving rise to a site-dependent reactivity of the carbon atoms and driving the hydrogenation process to the nanoribbon edges. Conversely, the chemisorbed hydrogen atom governs the $\pi$-magnetism of ZGNRs, acting as a spin-$\frac{1}{2}$ paramagnetic center in the otherwise antiferromagnetic ground state and spin-polarizing the charge carriers at the band extrema. Our findings establish a comprehensive picture of the peculiar interplay between chemistry and magnetism that emerges at the zigzag edges of graphene.

The emergence of alternating twist multilayer graphene (ATMG) as a generalization of twisted bilayer graphene (TBG) raises the question - in what important ways do these systems differ? Here, we utilize ab-initio relaxation and single-particle theory, analytical strong coupling analysis, and Hartree-Fock to contrast ATMG with $n=3,4,5,\ldots$ layers and TBG. $\textbf{I}$: We show how external fields enter in the decomposition of ATMG into TBG and graphene subsystems. The parallel magnetic field has little effect for $n$ odd due to mirror symmetry, but surprisingly also for any $n > 2$ if we are are the largest magic angle. $\textbf{II}$: We compute the relaxation of the multilayers leading to effective parameters for each TBG subsystem. We find that the second magic angle for $n=5$, $\theta = 1.14$ is closest to the "chiral" model and thus may be an optimal host for fractional Chern insulators. $\textbf{III}$: We integrate out non-magic subsystems and reduce ATMG to its magic angle TBG subsystem with a screened interaction. $\textbf{IV}$: We perform an analytic strong coupling analysis of the external fields and corroborate it with Hartree-Fock. An in-plane magnetic field in TBG drives a transition to a valley Hall state or a gapless "magnetic semimetal." A displacement field $V$ has little effect on TBG, but induces a gapped phase in ATMG for small $V$ for $n = 4$ and above a critical $V$ for $n = 3$. For $n\geq 3$, we find the superexchange coupling - believed to set the scale of superconductivity in the skyrmion mechanism - increases with $V$ at angles near and below the magic angle. $\textbf{V}$: We complement our strong coupling approach with a weak coupling theory of ATMG pair-breaking. While for $n=2$ orbital effects of the in-plane magnetic field can give a critical field of the same order as the Pauli field, for $n>2$ we expect the critical field to exceed the Pauli limit., Comment: 17 pages, 7 figures main text. 24 pages 4 figures supplement

Magic angle twisted trilayer graphene (TTG) has recently emerged as a new platform to engineer strongly correlated flat bands. Here, we reveal the structural and electronic properties of TTG using low temperature scanning tunneling microscopy at twist angles for which superconductivity has been observed. Real trilayer samples deviate from their idealized structure due to a strong reconstruction of the moir\'e lattice, which locks layers into near-magic angle, mirror symmetric domains comparable in size to the superconducting coherence length. The price for this magic relaxation is the introduction of an array of localized twist angle faults, termed twistons. These novel, gate-tunable moir\'e defects offer a natural explanation for the superconducting dome observed in transport and provide an avenue to probe superconducting pairing mechanisms through disorder tuning.

Graphene nanoribbons are widely regarded as promising building blocks for next-generation carbon-based devices. A critical issue to their prospective applications is whether and to what degree their electronic structure can be externally controlled. Here, we combine simple model Hamiltonians with extensive first-principles calculations to investigate the response of armchair graphene nanoribbons to transverse electric fields. Such fields can be achieved either upon laterally gating the nanoribbon or incorporating ambipolar chemical co-dopants along the edges. We reveal that the field induces a semiconductor-to-semimetal transition, with the semimetallic phase featuring zero-energy Dirac fermions that propagate along the armchair edges. The transition occurs at critical fields that scale inversely with the width of the nanoribbons. These findings are universal to group-IV honeycomb lattices, including silicene and germanene nanoribbons, irrespective of the type of edge termination. Overall, our results create new opportunities to electrically engineer Dirac fermions in otherwise semiconducting graphene-like nanoribbons.

Population-wide vaccination is critical for containing the SARS-CoV-2 (Covid-19) pandemic when combined with restrictive and prevention measures. In this study, we introduce SAIVR, a mathematical model able to forecast the Covid-19 epidemic evolution during the vaccination campaign. SAIVR extends the widely used Susceptible-Infectious-Removed (SIR) model by considering the Asymptomatic (A) and Vaccinated (V) compartments. The model contains several parameters and initial conditions that are estimated by employing a semi-supervised machine learning procedure. After training an unsupervised neural network to solve the SAIVR differential equations, a supervised framework then estimates the optimal conditions and parameters that best fit recent infectious curves of 27 countries. Instructed by these results, we performed an extensive study on the temporal evolution of the pandemic under varying values of roll-out daily rates, vaccine efficacy, and a broad range of societal vaccine hesitancy/denial levels. The concept of herd immunity is questioned by studying future scenarios which involve different vaccination efforts and more infectious Covid-19 variants.

The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of PL quenching of MoS2 A exciton, suggesting the enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.

Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present work, by applying extensive first-principles calculations of electron-phonon coupling associated with the calculation of the scattering by ionized impurities, we investigate the reasons behind the superior figure of merit as well as the enhancement of zT above 600 K in n-doped out-of-layer SnSe, as compared to p-doped SnSe with similar carrier densities. For the n-doped case, the relaxation time is dominated by ionized impurity scattering and increases with temperature, a feature that maintains the power factor at high values at higher temperatures and simultaneously causes the carrier thermal conductivity at zero electric current (k_el) to decrease faster for higher temperatures, leading to an ultrahigh-zT = 3.1 at 807 K. We rationalize the roles played by k_el and k^0 (the thermal conductivity due to carrier transport under isoelectrochemical conditions) in the determination of zT. Our results show the ratio between k^0 and the lattice thermal conductivity indeed corresponds to the upper limit for zT, whereas the difference between calculated zT and the upper limit is proportional to k_el., Comment: 12 pages, 5 figures

The notion of an electronic flat band refers to a collectively degenerate set of quantum mechanical eigenstates in periodic solids. The vanishing kinetic energy of flat bands relative to the electron-electron interaction is expected to result in a variety of many-body quantum phases of matter. Despite intense theoretical interest, systematic design and experimental realization of such flat band-driven correlated states in natural crystals have remained a challenge. Here we report the realization of a partially filled flat band in a new single crystalline kagome metal Ni$_3$In. This flat band is found to arise from the Ni $3d$-orbital wave functions localized at triangular motifs within the kagome lattice plane, where an underlying destructive interference among hopping paths flattens the dispersion. We observe unusual metallic and thermodynamic responses suggestive of the presence of local fluctuating magnetic moments originating from the flat band states, which together with non-Fermi liquid behavior indicate proximity to quantum criticality. These results demonstrate a lattice and orbital engineering approach to designing flat band-based many-body phenomena that may be applied to integrate correlation with topology and as a novel means to construct quantum criticality., Comment: 18 pages, 4 figures

The relativistic charge carriers in monolayer graphene can be manipulated in manners akin to conventional optics (electron-optics): angle-dependent Klein tunneling collimates an electron beam (analogous to a laser), while a Veselago refraction process focuses it (analogous to an optical lens). Both processes have been previously investigated, but the collimation and focusing efficiency have been reported to be relatively low even in state-of-the-art ballistic pn-junction devices. These limitations prevented the realization of more advanced quantum devices based on electron-optical interference, while understanding of the underlying physics remains elusive. Here, we present a novel device architecture of a graphene microcavity defined by carefully-engineered local strain and electrostatic fields. We create a controlled electron-optic interference process at zero magnetic field as a consequence of consecutive Veselago refractions in the microcavity and provide direct experimental evidence through low-temperature electrical transport measurements. The experimentally observed first-, second-, and third-order interference peaks agree quantitatively with the Veselago physics in a microcavity. In addition, we demonstrate decoherence of the interference by an external magnetic field, as the cyclotron radius becomes comparable to the interference length scale. For its application in electron-optics, we utilize Veselago interference to localize uncollimated electrons and characterize its contribution in further improving collimation efficiency. Our work sheds new light on relativistic single-particle physics and provides important technical improvements toward next-generation quantum devices based on the coherent manipulation of electron momentum and trajectory.