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457 results on '"Kaynak, Mehmet"'

1. Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

Author

Paolozzi, Lorenzo, Bandi, Yves, Cardarelli, Roberto, Debieux, Stephane, Favre, Yannick, Ferrere, Didier, Forshaw, Dean, Hayakawa, Daiki, Iacobucci, Giuseppe, Kaynak, Mehmet, Miucci, Antonio, Nessi, Marzio, Ripiccini, Emanuele, Ruecker, Holger, Valerio, Pierpaolo, and Weber, Michele

Subjects
Physics - Instrumentation and Detectors, Physics - Medical Physics
Abstract

The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 {\mu}m and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9 % and a time resolution down to 110 ps.

Published
2018
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2. A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner

Author

Valerio, Pierpaolo, Cardarelli, Roberto, Iacobucci, Giuseppe, Paolozzi, Lorenzo, Ripiccini, Emanuele, Hayakawa, Daiki, Bruno, Salvatore, Caltabiano, Alessandro, Kaynak, Mehmet, Rueker, Holger, and Nessi, Marzio

Subjects
Physics - Instrumentation and Detectors
Abstract

Time-of-flight measurement is an important advancement in PET scanners to improve image reconstruction with a lower delivered radiation dose. This article describes the monolithic ASIC for the TT-PET project, a novel idea for a high-precision PET scanner for small animals. The chip uses a SiGe Bi-CMOS process for timing measurements, integrating a fully-depleted pixel matrix with a low-power BJT-based front-end per channel, integrated on the same 100 $\mu{} m$ thick die. The target timing resolution is 30 ps RMS for electrons from the conversion of 511 keV photons. A novel synchronization scheme using a patent-pending TDC is used to allow the synchronization of 1.6 million channels across almost 2000 different chips at picosecond-level. A full-featured demonstrator chip with a 3x10 matrix of 500x500 $\mu{} m^{2}$ pixels was produced to validate each block. Its design and experimental results are presented here.

Published
2018
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5. Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2

Author

Xiong, Kuanchen, Li, Lei, Madjar, Asher, Hwang, James C. M., Lin, Zhaoyang, Huang, Yu, Duan, Xiangfeng, Goritz, Alexander, Wietstruck, Matthias, and Kaynak, Mehmet

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm thick films to improve the gate control while keeping the contact resistance lower than that on 10-nm films. These innovations may enable thin-film transistors to operate in the microwave range.

Published
2018
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6. RF MEMS Technology

Author

Rehder, Gustavo P., primary, Serrano, Ariana L. C., additional, Carreño, Marcelo N. P., additional, Kaynak, Mehmet, additional, Wipf, Selin Tolunay, additional, Wietstruck, Matthias, additional, and Göritz, Alexander, additional

Published
2022
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7. Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water

Author

Jin, Xin, Xiong, Kuanchen, Marstell, Roderick, Strandwitz, Nicholas C., Hwang, James C. M., Farina, Marco, Göritz, Alexander, Wietstruck, Matthias, and Kaynak, Mehmet

Subjects
Physics - Applied Physics
Abstract

Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air., Comment: 3 pages, 5 figures, conference

Published
2017

17. Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS

Author

Smirnova, Kateryna, Bohn, Christian, Kaynak, Mehmet, and Ulusoy, Ahmet Çağrı

Subjects
ddc:620, Engineering & allied operations
Abstract

This paper presents a power consumption reduction aspect for a 100-GHz low-noise amplifier. Two designs implemented in 0.13-µm SiGe BiCMOS technology demonstrate state-of-the-art performance, whereas $P_{\mathrm{DC}}$ is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 dB and 16 dB and a noise figure of 4 dB and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is -24.5 dBm and -26.5 dBm, respectively. The occupied IC area in both cases is 0.018 mm$^2$ and 0.014 mm$^2$ excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.

Published
2023
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27. K4 - SiGe BiCMOS Technology with Advanced Integration Solutions for for mm-wave and THz Applications

Author

Kaynak, Mehmet

Subjects
Microelectronics, Wireless and broadband communication systems, RFIC/MMIC, SiGe BiCMOS Technologies, Integrated circuits, Microelectrònica, Spintronics, Circuits integrats, Espintrònica, RF-MEMS, Enginyeria electrònica::Microelectrònica [Àrees temàtiques de la UPC], Heterogeneous and 3D Integration
Abstract

In last decade, SiGe BiCMOS technologies open a new cost-efficient market first at mm-wave frequencies, then at sub-THz and THz range. Starting with the commercial use of automotive radars at 77 GHz, and the demand for 120/140 GHz radars, the market now has a strong interest on low-cost silicon based technologies for such high frequencies. The driving force behind the BiCMOS is not anymore only radar applications but also 5G/6G communication systems, operating at 60, 140 or even 240/300 GHz. Furthermore, the strong need on the driving circuitries of photonics components has created a mass market of high speed communication circuitries. The latest developments on SiGe HBTs with fmax of beyond 700 GHz boosts the research and development effort on circuit and system area to take share from the new markets. In parallel to the developments on SiGe HBT performance, “More-than- Moore” path, which covers all the additional functionalities to the standard CMOS process (i.e. MEMS devices, microfluidics, photonics, etc…), allows to realize multi-functional circuits and systems. Heterogeneous integration as a key and enabler technology for the multi-functional systems has also great importance these days. Hetero integration of different technologies such as high scaled CMOS, SiGe BiCMOS or even III-V ones has become real. Such integration of multi-chip technologies provides the highest performance with the most efficient size and power consumption; thus paves the way for next generation smart systems integration. In this talk, approaches used for the integration of different More-than-Moore modules into a BiCMOS process will be presented. New hetero-integration technologies and corresponding challenges will be discussed.

Published
2022

28. Bendable 190-GHz Transmitter on 20-μm Ultra-Thin SiGe BiCMOS

Author

Hoyer, Christian, primary, Steinweg, Luca, additional, Cao, Zhibo, additional, Ries, Vincent, additional, Li, Lei, additional, Protze, Florian, additional, Carta, Corrado, additional, Wagner, Jens, additional, Kaynak, Mehmet, additional, Tillack, Bernd, additional, and Ellinger, Frank, additional

Published
2022
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35. Emerging Terahertz Integrated Systems in Silicon

Author

Yi, Xiang, primary, Wang, Cheng, additional, Hu, Zhi, additional, Holloway, Jack W., additional, Khan, Muhammad Ibrahim Wasiq, additional, Ibrahim, Mohamed I., additional, Kim, Mina, additional, Dogiamis, Georgios C., additional, Perkins, Bradford, additional, Kaynak, Mehmet, additional, Yazicigil, Rabia Tugce, additional, Chandrakasan, Anantha P., additional, and Han, Ruonan, additional

Published
2021
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38. High-Frequency Tellurene MOSFETs with Biased Contacts

Author

Xiong, Kuanchen, primary, Qiu, Gang, additional, Wang, Yixiu, additional, Li, Lei, additional, Goritz, Alexander, additional, Lisker, Marco, additional, Wietstruck, Matthias, additional, Kaynak, Mehmet, additional, Wu, Wenzhuo, additional, Ye, Peide D., additional, Madjar, Asher, additional, and Hwang, James C. M., additional

Published
2021
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43. A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284-328 GHz.

Author

Junghwan Yoo, Jungsoo Kim, Jongwon Yun, Kaynak, Mehmet, and Jae-Sung Rieh

Subjects
HETEROJUNCTION bipolar transistors, DIFFERENTIAL amplifiers
Abstract

This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology. The driver amplifier is based on the differential cascode configuration, which employs coupled-line transformers for compact design. The frequency doubler is based on the class-B topology, which is known for exhibiting a large output power with low DC power consumption. The integrated AFDC, which consists of the frequency doubler and the preceding driver amplifier, exhibited a measured peak output power and DC-to-RF efficiency of -0.9 dBm and 0.97%, respectively, along with a conversion gain of -0.1 dB. It operates from 284 to 328 GHz with a 0-dBm input signal, consuming a total DC power of only 84 mW. The chip size is 720 x 310 µm², excluding RF and DC pads. [ABSTRACT FROM AUTHOR]

Published
2022
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45. Quantitative Scanning Microwave Microscopy of Few-layer Platinum Diselenide

Author

Wang, Xiaopeng, primary, Xiong, Kuanchen, additional, Li, Lei, additional, Hwang, James C. M., additional, Jin, Xin, additional, Fabi, Gianluca, additional, Farina, Marco, additional, Hartwig, Oliver, additional, Prechtl, Maximilian, additional, Dusberg, Georg S., additional, Goritz, Alexander, additional, Wietstruck, Matthias, additional, and Kaynak, Mehmet, additional

Published
2021
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48. TÜRKİYE TÜRKÇESİ AĞIZLARI ÜZERİNE

Author

KAYNAK, Mehmet

Subjects
ağız,Anadolu ağızları,ağız araştırmaları,ağız sınıflandırmaları, Beşeri Bilimler, Ortak Disiplinler, Humanities, Multidisciplinary
Abstract

Belli bir yöre ağzına dayanan yazı dili, tek başına dilin bütün inceliklerini ve zenginliklerini yansıtmaktan yoksundur. Yazı dilimizin temelini oluşturan Türkiye Türkçesi ağızları, barındırdığı hacimli dil malzemesiyle bugün Türkiye Türkçesi gramerinin çözüm bekleyen birçok konusunun aydınlatılmasında temel başvuru kaynaklarındandır. Bu yüzden ağızlar üzerine yapılan çalışmalar büyük önem taşımaktadır. Son yıllarda Türkoloji çalışmalarının yoğunlaştığı alanlardan biri Türkiye Türkçesi ağızlarıdır. Özellikle 1980’li yıllardan sonra ülkemizde artmaya başlayan ağız çalışmaları sonucunda hemen her bölgeyle ilgili yayın yapılmış durumdadır. Çalışmaların önemli bir kısmı bölge ağızlarının özelliklerini tespit etmeye yönelik derleme çalışmalarıdır. Türkiye Türkçesi Ağızlarının ele alındığı bu yazıda ağız terimi, ağız sınıflandırmaları, ağız araştırmalarının bugünkü durumu, ağız araştırmalarında karşılaşılan sorunlar ve yapılan yanlışlar gibi temel konular üzerinde durulacaktır.

Published
2020

49. Immature cancer cell discrimination using combined high frequency Electromagnetic Fields and dielectrophoresis forces

Author

Dalmay, Claire, Manczak, Rémi, Saada, Sofiane, Provent, Thomas, Bessette, Barbara, Lalloué, Fabrice, Casciati, Arianna, Tanori, Mirella, Merla, Caterina, Mancuso, Mariateresa, Porcù, Elena, Rampazzo, Elena, Persano, Luca, Viola, Giampetro, Baristiran Kaynak, Canan, Kaynak, Mehmet, Palego, Cristiano, Pothier, Arnaud, RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Contrôle de l’Activation Cellulaire, Progression Tumorale et Résistance thérapeutique (CAPTuR), Institut Génomique, Environnement, Immunité, Santé, Thérapeutique (GEIST), Université de Limoges (UNILIM)-Université de Limoges (UNILIM), Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Agenzia Nazionale per le nuove Tecnologie, l’energia e lo sviluppo economico sostenibile (ENEA), Universita degli Studi di Padova, Innovations for High Performance Microelectronics (IHP), and Bangor University

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

50. Lab-On-Chip platform for neutralization of cancer stem cells

Author

Palego, Cristiano, Karim, Nissar, Eltokhy, Amira, Carr, Lynn, Can, Emre, Baristiran, Canan, Kaynak, Mehmet, Pothier, Arnaud, Arnaud-Cormos, Delia, Lévêque, Philippe, Bangor University, BIO-INGENIERIE (XLIM-BIO-INGENIERIE), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Innovations for High Performance Microelectronics (IHP), RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), Institut Universitaire de France (IUF), Ministère de l'Education nationale, de l’Enseignement supérieur et de la Recherche (M.E.N.E.S.R.), and Leveque, Philippe

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2020

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