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We report on the enhancement effect of metal nanotriangles (NTs) on the photoluminescence and its time-resolved dynamics of tris(8-quinolinolato) aluminum (Alq3). Regularly arranged Al NTs arrays were fabricated on the quartz substrate by means of nanosphere lithography. The absorption peaks corresponded to the localized surface plasmon (LSP) resonance of Al NTs were observed within a visible light region, and it was significantly shifted towards longer wavelength as increasing refractive index of the covering medium. The typical resonance wavelength of LSP of Alq3/Al NTs fabricated with 350 nm-PSt beads was 600 nm. From the PL measurement 2.6-fold PL enhancement was observed in Alq3 with Al NTs at room temperature, whereas the 4.4-fold PL enhancement was observed for Ag NTs with same size. According to the time-resolved PL data, the coupling of LSP with the excitation light field mainly contribute to the observed emission enhancement for the Al NTs, whereas the emission enhancement by Ag NTs can be originated from the direct coupling of LSP and emission which was suggested from the large contribution of short lifetime component.

Enhancement of 4.4-fold photoluminescence (PL) of tris(8-hydroxyquinolinato)aluminum (Alq3) thin film was observed in the presence of 50-nm thick Ag nanotriangles (NTs) compared with bare Alq3 film at room temperature. According to the temperature dependence of integrated PL intensity and the PL lifetime obtained from time-resolved PL measurements, an increase in radiative recombination rate was observed over a wide temperature range. Because the absorption peak originated from localized surface plasmon (LSP) states and the emission spectra are well overlapped, the observed enhancement can be explained by efficient coupling of the LSP of the Ag NTs with the emission from the Alq3.

Surface plasmon resonance (SPR) of Ag nanoparticles (NPs), and its emission enhancement properties are investigated by time-resolved photoluminescence spectroscopy using tris(8-hydroxyquinolinato)aluminium (Alq3), which is generally applied in organic light-emitting diode, as the emitter. 5-nm-thick Ag island-films were fabricated, and annealed at various temperatures to vary the size of the Ag NPs. The peak position of the SPR band in the absorption spectra of Ag NPs blue-shifts with increasing annealing temperature, that is, the SPR frequency is controlled by the NP size. Comparison of the photoluminescence (PL) spectra of Alq3 with and without Ag NPs annealed at 150 °C indicates 1.2-fold enhancement of PL for Alq3 with Ag NPs compared to the reference Alq3. From the temperature dependence of the PL intensity and lifetime of Alq3 with Ag NPs, we evaluated the degree of enhancement of the radiative recombination rate in the presence of the localized surface plasmon of Ag NPs, in comparison with the competitive non-radiative quenching process.

We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O2 atmospheres. IZO films grown under an O2 atmosphere (IZO (O2)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O2 atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O2) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.

We report on a photoluminescence (PL) enhancement in IZO/Ag/IZO sandwiched structure via surface plasmonic effects of 14 nm-thick Ag film. In the presence of Ag thin film, the 2–8-fold enhancement was observed for the broad PL around 2.34 eV, which can be originated from defect states in amorphous IZO film. The results of time-resolved PL spectra suggested that the increase in radiative recombination rate, and the maximum Purcell factor of 19 was estimated from the analysis of the PL decay profiles. The comparison between the results of static- and dynamic-PL measurement suggests that the non-radiative process after the excitation of the surface plasmon of the silver film also affects the total efficiency of the emission enhancement.