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In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, leading to changes in the local magnetic anisotropy of a magnetic material through magnetoelastic interactions. Using Kerr microscopy, we experimentally demonstrate how the magnetoelastic energy landscape, created by a pair of openings, in a magnetic nanowire enables the creation of pinning sites for in-plane vortex walls that propagate in a magnetic racetrack. We report substantial pinning fields up to 15 mT for device-relevant ferromagnetic materials with positive magnetostriction. We support our experimental results with finite element simulations for the induced strain, micromagnetic simulations and 1D model calculations using the realistic strain profile to identify the depinning mechanism. All the observations above are due to the magnetoelastic energy contribution in the system, which creates local energy minima for the domain wall at the desired location. By controlling domain walls with strain, we realize the prototype of a true power-on magnetic sensor that can measure discrete magnetic fields or Oersted currents. This utilizes a technology that does not require piezoelectric substrates or high-resolution lithography, thus enabling wafer-level production.

Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, the spin reorientation transition of a bilayer system is investigated in wedge type samples, where we report an increase in the perpendicular magnetic anisotropy in the presence of in-plane strain. Using a model for magnetostatics and spin reorientation transition in this type of system, we confirm that the observed changes in anisotropy field are mainly due to the Co magnetoelastic anisotropy. Secondly, the magnetization compensation of a quadlayer is studied. We find that magnetization compensation of this synthetic ferrimagnetic system is not altered by external strain. This confirms the resilience of this material system against strain that may be induced during the integration process, making Co/Gd ferrimagnets suitable candidates for spintronics applications.

Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.

This study reports the effects of post-growth He$^+$ irradiation on the magneto-elastic properties of a $Ni$ /$Fe$ multi-layered stack. The progressive intermixing caused by He$^+$ irradiation at the interfaces of the multilayer allows us to tune the saturation magnetostriction value with increasing He$^+$ fluences, and even to induce a reversal of the sign of the magnetostrictive effect. Additionally, the critical fluence at which the absolute value of the magnetostriction is dramatically reduced is identified. Therefore insensitivity to strain of the magnetic stack is nearly reached, as required for many applications. All the above mentioned effects are attributed to the combination of the negative saturation magnetostriction of sputtered Ni, Fe layers and the positive magnetostriction of the Ni$_{x}$Fe$_{1-x}$ alloy at the intermixed interfaces, whose contribution is gradually increased with irradiation. Importantly the irradiation does not alter the layers polycrystalline structure, confirming that post-growth He$^+$ ion irradiation is an excellent tool to tune the magneto-elastic properties of magnetic samples. A new class of spintronic devices can be envisioned with a material treatment able to arbitrarily change the magnetostriction with ion-induced "magnetic patterning".

We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, $Co_{40}Fe_{40}B_{20}$, $Ni$ and $Ni_{82}Fe_{18}$ samples with in-plane magnetization and different magnetoelastic coupling are deposited. In these samples, we measure the magnetic field required for the injection of a DW, by imaging differential contrast in a magneto-optical Kerr microscope. We find that strain increases the DW injection field, however, the switching mechanism depends strongly on the direction of the strain with respect to the wire axis. We observe that low magnetic anisotropy facilitates the creation of a domain wall at the junction between the pad and the wire, whereas a strain-induced magnetic easy axis significantly increases the coercive field of the nucleation pad. Additionally, we find that the effects of mechanical strain can be counteracted by a magnetic uniaxial anisotropy perpendicular to the strain-induced easy axis. In $Co_{40}Fe_{40}B_{20}$, we show that this anisotropy can be induced by annealing in a magnetic field. We perform micromagnetic simulations to support the interpretation of our experimental findings. Our simulations show that the above described observations can be explained by the effective anisotropy in the device. The anisotropy influences the switching mechanism in the nucleation pad as well as the pinning of the DW at the wire entrance. As the DW injection is a key operation for sensor performances, the observations show that strain is imposing a lower limit for the sensor field operating window.

We investigate the generation of magnonic thermal spin currents and their mode selective spin transport across interfaces in insulating, compensated ferrimagnet/normal metal bilayer systems. The spin Seebeck effect signal exhibits a non-monotonic temperature dependence with two sign changes of the detected voltage signals. Using different ferrimagnetic garnets, we demonstrate the universality of the observed complex temperature dependence of the spin Seebeck effect. To understand its origin, we systematically vary the interface between the ferrimagnetic garnet and the metallic layer, and by using different metal layers we establish that interface effects play a dominating role. They do not only modify the magnitude of the spin Seebeck effect signal but in particular also alter its temperature dependence. By varying the temperature, we can select the dominating magnon mode and we analyze our results to reveal the mode selective interface transmission probabilities for different magnon modes and interfaces. The comparison of selected systems reveals semi-quantitative details of the interfacial coupling depending on the materials involved, supported by the obtained field dependence of the signal.

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe2O4 (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect (ISHE). The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ~100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effect is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments., Comment: 17 pages, 4 figures

The temperature dependent longitudinal spin Seebeck effect (SSE) in heavy metal (HM)/ Y3Fe5O12 (YIG) bilayers is investigated as a function of different magnetic field strength, different HM detection material, and YIG thickness ranging from nm to mm. A large enhancement of the SSE signal is observed at low temperatures leading to a peak of the signal amplitude. We demonstrate that this enhancement shows a clear dependence on the film thickness, being more pronounced for thicker films and vanishing for films thinner than 600 nm. The peak temperature depends on the applied magnetic field strength as well as on the detection material and interface, revealing a more complex behavior beyond the currently discussed phonon-magnon coupling mechanism that considers only bulk effects. While the thickness dependence and magnetic field dependence can be well explained in the framework of the magnon-driven SSE by taking into account the frequency dependent propagation length of thermally excited magnons in the bulk material, the temperature dependence of the SSE is significantly influenced by the interface coupling to an adjacent detection layer. This indicates that previously neglected interface effects play a key role and that the spin current traversing the interface and being detected in the HM depends differently on the magnon frequency for different HMs., Comment: 18 pages, 4 figures

The origin of the suppression of the longitudinal spin Seebeck effect by applied magnetic fields is studied. We perform numerical simulations of the stochastic Landau-Lifshitz-Gilbert equation of motion for an atomistic spin model and calculate the magnon accumulation in linear temperature gradients for different strengths of applied magnetic fields and different length scales of the temperature gradient. We observe a decrease of the magnon accumulation with increasing magnetic field and we reveal that the origin of this effect is a field dependent change of the frequency distribution of the propagating magnons. With increasing field the magnonic spin currents are reduced due to a suppression of parts of the frequency spectrum. By comparison with measurements of the magnetic field dependent longitudinal spin Seebeck effect in YIG thin films with various thicknesses, we find that our model describes the experimental data very well, demonstrating the importance of this effect for experimental systems.

We probe the spin Seebeck effect in Gd$_{3}$Fe$_{5}$O$_{12}$/Pt hybrid structures as a function of temperature and observe two sign changes of the spin Seebeck signal with decreasing temperature. A first sign change occurs at a temperature close to the Gd$_{3}$Fe$_{5}$O$_{12}$ magnetic compensation point at around 280 K. There the spin Seebeck signal changes sign abruptly with unaltered amplitude, indicating that the spin current is mainly caused by the magnetic Fe sub-lattices, which reorient their directions at this temperature. A second, more gradual sign change takes place around the ordering temperature of the Gd sub-lattice in the range of 65-85 K, showing that the Gd magnetic sub-lattice dominates the thermally driven spin current at lower temperatures. These sign changes together with the non-monotonous dependence of the spin Seebeck signal on the temperature demonstrate that the magnonic spin current is not simply replicating the effective magnetization of Gd$_{3}$Fe$_{5}$O$_{12}$. Rather, the thermally generated net spin current results from a complex interplay of the three magnetic sub-lattices involved.

We present experimental XMLD spectra measured on epitaxial (001)-oriented thin Co$_{2}$FeSi films, which are rich in features and depend sensitively on the degree of atomic order and interdiffusion from capping layers. Al- and Cr-capped films with different degrees of atomic order were prepared by DC magnetron sputtering by varying the deposition temperatures. The local structural properties of the film samples were additionally investigated by nuclear magnetic resonance (NMR) measurements. The XMLD spectra of the different samples show clear and uniform trends at the $L_{3,2}$ edges. The Al-capped samples show similar behavior as previous measured XMLD spectra of Co$_2$FeSi$_{0.6}$Al$_{0.4}$. Thus, we assume that during deposition Al atoms are being implanted into the subsurface of Co$_{2}$FeSi. Such an interdiffusion is not observed for the corresponding Cr-capped films, which makes Cr the material of choice for capping Co$_{2}$FeSi films. We report stronger XMLD intensities at the $L_{3,2}$ Co and Fe egdes for films with a higher saturation magnetization. Additionally, we compare the spectra with \textit{ab initio} predictions and obtain a reasonably good agreement. Furthermore, we were able to detect an XMCD signal at the Si $L$-edge, indicating the presence of a magnetic moment at the Si atoms.

The observation of the spin Seebeck effect in insulators has meant a breakthrough for spin caloritronics due to the unique ability to generate pure spin currents by thermal excitations in insulating systems without moving charge carriers. Since the recent first observation, the underlying mechanism and the origin of the observed signals have been discussed highly controversially. Here we present a characteristic dependence of the longitudinal spin Seebeck effect amplitude on the thickness of the insulating ferromagnet (YIG). Our measurements show that the observed behavior cannot be explained by any effects originating from the interface, such as magnetic proximity effects in the spin detector (Pt). Comparison to theoretical calculations of thermal magnonic spin currents yields qualitative agreement for the thickness dependence resulting from the finite effective magnon propagation length so that the origin of the effect can be traced to genuine bulk magnonic spin currents ruling out parasitic interface effects., Comment: 12 pages, 6 figures

We propose a planar architecture for scalable quantum information processing (QIP) that includes X-junctions through which particles can move without micromotion. This is achieved by adjusting radio frequency (rf) amplitudes to move an rf null along the legs of the junction. We provide a proof-of-principle by transporting dust particles in three dimensions via adjustable rf potentials in a 3D trap. For the proposed planar architecture, we use regularization techniques to obtain amplitude settings that guarantee smooth transport through the X-junction., Comment: 16 pages, 10 figures