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2. Very High Carrier Mobility for High-Performance CMOS on a Si(1 10) Surface.

Author

Teramoto, Akinobu, Hamada, Tatsufumi, Yamamoto, Masashi, Gaubert, Philippe, Akahori, Hiroshi, Keiichi Nii, Hirayama, Masaki, Arima, Kenta, Endo, Katsuyoshi, Sugawa, Shigetoshi, and Ohmi, Tadahiro

Subjects
COMPLEMENTARY metal oxide semiconductors, METAL oxide semiconductor field-effect transistors, DIGITAL electronics, TRANSISTOR-transistor logic circuits, LOGIC circuits
Abstract

In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregateoxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(110) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits. [ABSTRACT FROM AUTHOR]

Published
2007
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3. Low Noise Balanced-CMOS on Si(110) surface for Analog/Digital Mixed Signal Circuits

Author

Masaki Hirayama, Tatsufumi Hamada, Akinobu Teramoto, Hiroshi Akahori, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi, Tomoyuki Suwa, and Keiichi Nii

Subjects
Surface (mathematics), Materials science, Silicon, business.industry, Electrical engineering, chemistry.chemical_element, Mixed-signal integrated circuit, Hardware_PERFORMANCEANDRELIABILITY, Noise (electronics), Flattening, Integrated injection logic, chemistry, CMOS, MOSFET, Hardware_INTEGRATEDCIRCUITS, business, Hardware_LOGICDESIGN
Abstract

This paper demonstrated CMOS characteristics on a Si(110) surface by using a surface flattening process and radical oxidation. By forming a MOS device on a Si(110) surface, a high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, balanced current drivability of p-MOS and n-MOS in the CMOS (balanced CMOS) on Si(110) surface can be also realized. This is very useful for analog/digital mixed signal circuits.

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