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Skyrmion imaging and electrical detection via topological Hall (TH) effect are two primary techniques for probing magnetic skyrmions, which hold promise for next-generation magnetic storage. However, these two kinds of complementary techniques have rarely been employed to investigate the same samples. We report the observation of nanoscale skyrmions in SrIrO3/SrRuO3 (SIO/SRO) bilayers in a wide temperature range from 10 to 100 K. The SIO/SRO bilayers exhibit a remarkable TH effect, which is up to 200% larger than the anomalous Hall (AH) effect at 5 K, and zero-field TH effect at 90 K. Using variable-temperature, high-field magnetic force microscopy (MFM), we imaged skyrmions as small as 10 nm, which emerge in the same field ranges as the TH effect. These results reveal a rich space for skyrmion exploration and tunability in oxide heterostructures.

Local strain-dependent spin-polarized electronic structure of a two-dimensional (2D) magnetic layer is an exciting property for practical applications. For example, it holds the promise for advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties by local strain engineering. Here, we demonstrate that the spin-polarized electronic structure of a 2D manganese gallium nitride (MnGaN-2D) magnetic monolayer is sensitive to intrinsic local lattice strain, as proven by first-principles calculations and indicated by scanning tunneling spectroscopy measurements. Atomic resolution images reveal a highly non-Gaussian lattice spacing/strain distribution, while the spectroscopy reveals variations in the electronic density of states. Simulations of the MnGaN-2D monolayer based on first-principles calculations, including both isotropic and anisotropic strains, confirm a highly strain-dependent manganese partial density of states. Spin-orbit coupling is included which indicates either out-of-plane perpendicular magnetic anisotropy (PMA) or in-plane magnetic anisotropy, dependent on the type of strain whether compressive or tensile, suggesting that MnGaN-2D is magnetoelastic. The MnGaN-2D PMA is further supported by superconducting quantum interference device magnetometry measurements which reveal a high spin polarization of $\ensuremath{\sim}79$% at room temperature.

Skyrmion imaging and electrical detection via topological Hall (TH) effect are two primary techniques for probing magnetic skyrmions, which hold promise for next-generation magnetic storage. However, these two kinds of complementary techniques have rarely been employed to investigate the same samples. We report the observation of nanoscale skyrmions in SrIrO

We studied exchange bias and exchange spring effects in magnetic bilayer thin films of Fe and CrN grown by molecular beam epitaxy. First, the relationships between exchange bias, coercivity, and blocking temperature and the Fe and CrN layers thicknesses are studied. Second, the exchange spring effect is observed and studied in all samples. The exchange spring breaks free at critical applied field strengths while creating planar domain walls at lower applied fields. First-principles calculations are performed to understand the magnetic interactions between the Fe and CrN layers at their interfaces. The calculations are key to understanding the experimental observations.

Low-loss magnetization dynamics and strong magnetoelastic coupling are generally mutually exclusive properties due to opposing dependencies on spin-orbit interactions. So far, the lack of low-damping, magnetostrictive ferrite films has hindered the development of power-efficient magnetoelectric and acoustic spintronic devices. Here, magnetically soft epitaxial spinel NiZnAl-ferrite thin films with an unusually low Gilbert damping parameter (

Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena, which can be further used for applications in next generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene/ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owing to clean interfaces, a strong magnetic exchange coupling leads to the experimental observation of complete spin modulation at low externally applied magnetic fields in short graphene channels. Additionally, we discover that the graphene spin current can be fully dephased by randomly fluctuating exchange fields. This is manifested as an unusually strong temperature dependence of the non-local spin signals in graphene, which is due to spin relaxation by thermally-induced transverse fluctuations of the FMI magnetization.

Semimetallic iridate compound SrIrO3 epitaxial films have been deposited by off-axis sputtering, exhibiting excellent crystalline quality as well as smooth surfaces. By performing second-harmonic Hall measurements on a series of SrIrO3/Co1−xTbx bilayers, we quantitatively determined the spin-to-charge interconversion efficiency θ SH of SrIrO3 and discovered a systematic temperature and film thickness dependent evolution behavior. Notably, the measured θ SH reaches a remarkably large number of ∼1.1 at room temperature, which is significantly larger than the value of 5d transition metals and comparable to the values reported in some topological material systems. Our findings are further corroborated by ferromagnetic resonance-driven spin pumping studies in SrIrO3/Py bilayers, highlighting the significant opportunities offered by the iridate compounds in designing next-generation energy-efficient multifunctional spin Hall devices.

We measure the spin Hall angle in Au layers of 5--100 nm thicknesses by spin pumping from ${\mathrm{Y}}_{3}\mathrm{F}{\mathrm{e}}_{5}{\mathrm{O}}_{12}$ epitaxial films grown by ultrahigh vacuum, off-axis sputtering. We observe a striking increase in the spin Hall angle for Au layers thinner than the measured spin diffusion length of 12.6 nm. In particular, the 5 nm Au layer shows a large spin Hall angle of 0.087, compared to those of 0.016 and 0.017 for the 50 and 100 nm Au layers, respectively, suggesting that the top surface plays a dominant role in spin Hall physics when the spin current is able to reach it. Other spin pumping related parameters, including Gilbert damping enhancement, interfacial spin mixing conductance, and spin current are also determined for Au layers of various thicknesses. Given the pervasive role of ultrathin films in electrical and spin transport applications, this result emphasizes the importance of considering the impact of the top surface and reveals the possibility of tuning critical spin parameters by film thickness.

B20 phase magnetic materials, such as FeGe, have been of significant interests in recent years because they enable magnetic skyrmions, which can potentially lead to low energy cost spintronic applications. One major effort in this emerging field is the stabilization of skyrmions at room temperature and zero external magnetic field. We report the growth of phase-pure FeGe epitaxial thin films on Si(111) substrates by ultrahigh vacuum off-axis sputtering. The high crystalline quality of the FeGe films was confirmed by x-ray diffraction and scanning transmission electron microscopy. Hall effect measurements reveal strong topological Hall effect after subtracting out the ordinary and anomalous Hall effects, demonstrating the formation of high density skyrmions in FeGe films between 5 and 275 K. In particular, substantial topological Hall effect was observed at zero magnetic field, showing a robust skyrmion phase without the need of an external magnetic field.

We report an approach to controlling the effective magnetization (Meff), a combination of the saturation magnetization and uniaxial anisotropy, of the ferrimagnet Y3Fe5O12 (YIG) using different species of ions: He+ and Ga+. The effective magnetization can be tuned as a function of the fluence, with He + providing the largest effect. We quantified the change in effective magnetization through an angular dependence of the ferromagnetic resonance before and after irradiation. Increases in 4πMeff were observed to be as much as 400 G with only a 15% increase in Gilbert damping, α (from 8.2e-4 to 9.4e-4). This result was combined with a method for accurate ion pattering, a focused ion beam, providing a mechanism for shaping the magnetic environment with submicron precision. We observe resonance modes localized by ion patterning of micron-sized dots, whose resonances match well with micromagnetic simulations. This technique offers a flexible tool for precision nanoscale control and characterization of the magnetic properties of YIG.

We report structural and magnetic properties of magnetostrictive Fe100−xGax (x ≈ 15) alloys when deposited onto antiferromagnetic manganese nitride and non-magnetic magnesium oxide substrates. From X-ray diffraction measurements, we find that the FeGa films are single crystalline. Scanning tunneling microscopy imaging reveals that the surface morphologies are dictated by the growth temperature, composition, and substrate. The magnetic properties can be tailored by the substrate, as found by magnetic force microscopy imaging and vibrating sample magnetometry measurements. In addition to pronounced tetragonal deformations, depositing FeGa onto manganese nitride leads to the formation of stripe-like magnetic domain patterns and to the appearance of perpendicular magnetic anisotropy.

The saturation magnetization of Y3Fe5O12 (YIG) epitaxial films 4 to 250 nm in thickness has been determined by complementary measurements including the angular and frequency dependencies of the ferromagnetic resonance fields as well as magnetometry measurements. The YIG films exhibit state-of-the-art crystalline quality, proper stoichiometry, and pure Fe3+ valence state. The values of YIG magnetization obtained from all the techniques significantly exceed previously reported values for single crystal YIG and the theoretical maximum. This enhancement of magnetization, not attributable to off-stoichiometry or other defects in YIG, opens opportunities for tuning magnetic properties in epitaxial films of magnetic insulators.