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Flash sintering features an unoptimized and uncontrolled rise in current density and sample conductivity. By using a controlled current-ramp technique with a predetermined ramp function, microstructure and electrochemical properties can be improved. This current-ramp method is investigated through use of test functions that follow square-root, linear, and parabolic time dependence with comparison to conventional flash sintering and thermal sintering. Steeper ramp functions during the sintering result in higher activation energy, suggesting a change in the vacancy concentration for both the bulk and grain boundary regions. Estimation of the grain boundary domain width suggests a grain size dependence of the unique space charge contribution to conduction independent of sintering method. Contrary to conventional wisdom, flash sintering can actually result in enhanced grain growth compared to controlled current-ramps and conventional sintering, implying that uncontrolled rise in current to a set cutoff may not be the optimal method for densification.

In conventional flash sintering, the current rises nonlinearly to a set current limit, accompanied by a spike in the power density. This sudden power spike may cause hot spot formation, in which current preferentially channels through a small area, causing localized melting while other areas remain unsintered. By using a controlled current ramp early on the sudden power spike can be avoided. In addition, by changing the ramp rate material properties such as porosity, grain size and conductivity can be tuned.

Undoped (B4C), B rich (B5.5C), and B/Si co-doped (Si-B6.5C) boron carbides were annealed at 500 °C for up to 21 days to investigate the thermal stability of primary dopants, B and Si. Structural changes associated with dedoping were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stable phase B4C showed no microstructural or lattice parameter changes. Similarly, lattice parameters of B5.5C remained constant, suggesting that B dopant is stable at the given conditions. However, the shortened lattice parameters and reduced Si content of Si-B6.5C over the annealing time indicated that Si dopant was in a metastable state at the annealing temperature. Consequently, Si dedoping led to an increase in amorphization (a loss of local crystalline order) which degrades the ballistic performance of boron carbide. The insight highlights the importance of Si dopant in boron carbide and suggests that rapid processing may be necessary to retain more silicon for better performance.