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20 results on '"Key, Daryl"'

1. 7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Author

Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Telasara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, and Lu, Wu

Subjects
Physics - Applied Physics
Abstract

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device design of a vertical GaN-on-GaN PN power diode using high dielectric constant (high-k) dielectrics for electrical field management and high breakdown voltages, in together with guard-rings and a field plate. The fabricated diodes with a 57 um thick drift layer demonstrated a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mohm.cm2 and a Baliga figure of merit of 22 GW/cm2., Comment: 4 pages, 6 figures

Published
2023

2. Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping.

Author

Xu, Zhiyu, Daeumer, Matthias A., Cho, Minkyu, Yoo, Jae-Hyuck, Detchprohm, Theeradetch, Bakhtiary-Noodeh, Marzieh, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Letts, Edward, Hashimoto, Tadao, Dupuis, Russell D., and Shen, Shyh-Chiang

Subjects
GALLIUM nitride, PIN diodes, PERSONAL identification numbers, PHOTOLUMINESCENCE, LUMINESCENCE
Abstract

This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects. [ABSTRACT FROM AUTHOR]

Published
2024
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6. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Author

Cho, Minkyu, primary, Xu, Zhiyu, additional, Bakhtiary-Noodeh, Marzieh, additional, Detchprohm, Theeradetch, additional, Daeumer, Matthias A., additional, Yoo, Jae-Hyuck, additional, Shao, Qinghui, additional, Laurence, Ted A., additional, Key, Daryl, additional, Hashimoto, Tadao, additional, Letts, Edward, additional, Dupuis, Russell D., additional, and Shen, Shyh-Chiang, additional

Published
2023
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7. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management.

Author

Xu, Yibo, Vangipuram, Vijay Gopal Thirupakuzi, Talesara, Vishank, Cheng, Junao, Zhang, Yuxuan, Hashimoto, Tadao, Letts, Edward, Key, Daryl, Zhao, Hongping, and Lu, Wu

Subjects
BREAKDOWN voltage, ELECTRON mobility, DIELECTRIC materials, DIODES, GALLIUM nitride, PERMITTIVITY
Abstract

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm 2 and a Baliga figure of merit of 22 GW/ cm 2 . [ABSTRACT FROM AUTHOR]

Published
2023
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20. Integrated Method for the Measurement of Trace Atmospheric Bases.

Author

Key, Daryl, Stihle, Jerome, Petit, Jean-Eudes, Bonnet, Cécile, Depernon, Lauriane, Liu, Oscar, Kennedy, Sean, Latimer, Robyn, Burgoyne, Marnie, Wanger, Darcy, Webster, Alexandre, Casunuran, Samantha, Hidalgo, Sergio, Thomas, Mark, Moss, John A., and Baum, Marc M.

Subjects
*HIGH performance liquid chromatography, *GAS chromatography, *TRACE analysis, *MASS spectrometry, *BASES (Chemistry), *ATMOSPHERIC chemistry
Abstract

The article presents a study which analyzes the potential of integrated method for the measurement of trace atmospheric bases. The project uses a chromatography instrumentation which consists a high performance liquid chromatography with mass spectrometric detection and a gas chromatography. An overview of the preparation of authentic samples is provided. The conducted Denuder and Impinger efficiency tests were highlighted.

Published
2011

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