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16 results on '"Khoshroo, L. Rahimzadeh"'

2. Dielectric function and optical properties of quaternary AlInGaN alloys.

Author

Sakalauskas, E., Reuters, B., Khoshroo, L. Rahimzadeh, Kalisch, H., Heuken, M., Vescan, A., Röppischer, M., Cobet, C., Gobsch, G., and Goldhahn, R.

Subjects
ALUMINUM nitride, GALLIUM nitride, METALLIC films, METAL organic chemical vapor deposition, BACKSCATTERING, CHROMIUM-cobalt-nickel-molybdenum alloys
Abstract

The optical properties of quaternary Alx Iny Ga1-x-yN alloy films with 0.16< x<0.64 and 0.02< y<0.13 are presented. The (0001)-oriented AlInGaN layers were grown by metal-organic vapor phase epitaxy on thick GaN/sapphire templates. High-resolution x-ray diffraction measurements revealed the pseudomorphic growth of the AlInGaN films on the GaN buffer. Rutherford backscattering and wavelength-dispersive x-ray spectroscopy analysis were used in order to determine the composition of the alloys. The ordinary dielectric function (DF) of the AlInGaN samples was determined in the range of 1-10 eV by spectroscopic ellipsometry (SE) at room temperature (synchrotron radiation: BESSY II). The sharp onset of the imaginary part of the DF defines the direct absorption edge of the alloys. At higher photon energies, pronounced peaks are observed in the DF indicating a promising optical quality of the material. These features are correlated to the critical points of the band structure (van Hove singularities). An analytical model, which permits us to accurately describe the dielectric function (or optical constants) in the range of 1-10 eV, is also presented. The band-gap and high-energy interband transition values are obtained by fitting the experimental DF with the analytical model. The strain influence on the bandgap is evaluated by using the k×p formalism. Furthermore, an empirical expression is proposed which allows us to calculate the AlInGaN band-gap and high-energy inter-band transitions in the whole compositional range (x, y). The band-gap values obtained from the empirical expression are in good agreement with both the calculated ab initio and the experimental values determined by SE. [ABSTRACT FROM AUTHOR]

Published
2011
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4. Anisotropic properties of MOVPE-grown m-plane GaN layers on LiAlO2 substrates

Author

Mauder, C., primary, Wang, K. R., additional, Reuters, B., additional, Behmenburg, H., additional, Khoshroo, L. Rahimzadeh, additional, Wan, Q., additional, Trampert, A., additional, Rzheutskii, M. V., additional, Lutsenko, E. V., additional, Yablonskii, G. P., additional, Woitok, J. F., additional, Heuken, M., additional, Kalisch, H., additional, and Jansen, R. H., additional

Published
2010
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5. In situ SiN passivation of AlInN/GaN heterostructures by MOVPE

Author

Behmenburg, H., primary, Khoshroo, L. Rahimzadeh, additional, Mauder, C., additional, Ketteniss, N., additional, Lee, K. H., additional, Eickelkamp, M., additional, Brast, M., additional, Fahle, D., additional, Woitok, J. F., additional, Vescan, A., additional, Kalisch, H., additional, Heuken, M., additional, and Jansen, R. H., additional

Published
2010
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7. Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties

Author

Behmenburg, H., primary, Khoshroo, L. Rahimzadeh, additional, Eickelkamp, M., additional, Mauder, C., additional, Fieger, M., additional, Ketteniss, N., additional, Woitok, J., additional, Wamwangi, D., additional, Wuttig, M., additional, Hernandez, S. Estevez, additional, Schäpers, T., additional, Heuken, M., additional, Vescan, A., additional, Kalisch, H., additional, and Jansen, R. H., additional

Published
2009
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8. MOVPE growth and investigation of AlInN/AlN multiple quantum wells

Author

Mauder, C., primary, Khoshroo, L. Rahimzadeh, additional, Rzheutski, M. V., additional, Lutsenko, E. V., additional, Yablonskii, G., additional, Kozlovsky, V. I., additional, Woitok, J., additional, Dikme, Y., additional, Heuken, M., additional, Kalisch, H., additional, and Jansen, R. H., additional

Published
2008
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9. m -plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

Author

Behmenburg, H., primary, Wen, T. C., additional, Dikme, Y., additional, Mauder, C., additional, Khoshroo, L. Rahimzadeh, additional, Chou, M. M. C., additional, Rzheutskii, M. V., additional, Lutsenko, E. V., additional, Yablonskii, G. P., additional, Woitok, J., additional, Kalisch, H., additional, Jansen, R. H., additional, and Heuken, M., additional

Published
2008
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10. AlInN/GaN HEMTs on sapphire: dc and pulsed characterisation

Author

Fieger, M., primary, Eickelkamp, M., additional, Zhang, W., additional, Khoshroo, L. Rahimzadeh, additional, Mauder, C., additional, Dikme, Y., additional, Heuken, M., additional, Noculak, A., additional, Kalisch, H., additional, Jansen, R. H., additional, and Vescan, A., additional

Published
2008
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11. MOVPE of m-plane InGaN/GaN Buffer and LED Structures on γ-LiAlO2

Author

Behmenburg, H., primary, Mauder, C., additional, Khoshroo, L. Rahimzadeh, additional, Wen, T.C., additional, Dikme, Y., additional, Rzheutskii, M.V., additional, Lutsenko, E.V., additional, Yablonskii, G.P., additional, Chou, M.M.C., additional, Woitok, J., additional, Heuken, M., additional, Kalisch, H, additional, and Jansen, R.H., additional

Published
2008
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