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49 results on '"Kim, Hyoungjae"'

3. Technological Approaches in Nanopolishing for Microstructures

Author

Jeong, Haedo, Kim, Hyoungjae, Lee, Sunghoon, and Dornfeld, David A

Abstract

Polishing technology has been broadly used in manufacturing of components to enhance the surface quality at final processing stage. On the threshold for the 21th century, all of technologies are changing more rapidly than the past. One of them is the miniaturization of the smart systems that require new technological approaches in manufacturing processes. Scientists and engineers have some responsibilities to revise the terminology and expand the area of each technology from the conventional one to nanoengineering. This paper focuses on the introduction of new technological approaches in nanopolishing for microstructures that imply new additional concepts on the conventional polishing. New concepts include damage-free, planarization, nanotopography and conformalization. Damage-free means to get not only atomic level surface roughness, but also subsurface without any physical defects. As one of the emerging methods, chemical mechanical polishing (CMP) is introduced with chemical reaction on the conventional mechanical polishing. Planarization is one of the fabrication processes for semiconductor devices, to make flat from the bumpy or rugged pattern surfaces for rearrangement of ULSI below quarter microns. Representative applications are reported with IMD, STI, copper and low-k CMP. Nanotopography means nanofeatures having 0.2~20mm wave length covered between nanoroughness (10-100nm) and flatness. It influences on the deterioration of threshold voltage, dielectric breakdown and failure of CMP of thin blanket film. Final issue is pointed to the conformalization which means isotropic removal of microstructures to improve the roughness while maintaining the micro three dimensional forms. Electrorheological and magnetorheologi- cal fluid (ERF or MRF) assisted polishing techniques are summarized with their material removal mechanisms and some results.

Published
2004

4. Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Author

Lee, Hyunseop, Kim, Hyoungjae, and Jeong, Haedo

Abstract

Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

Published
2024
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28. Effect of Structures with Structured Surface Pad on Material Removal Rate in Chemical Mechanical Polishing

Author

Park, Youngwook, Jung, Hokyoung, Kim, Doyeon, Lee, Taekyung, Jeong, Haedo, and Kim, Hyoungjae

Abstract

We investigated the impact of the designed contact area (DCA) and designed contact length (DCL) on material removal rates (MRR) when using a pad with a structured surface in chemical mechanical polishing. The structure of the structured surface pad (SSP) was precisely defined, and an examination was conducted to assess the influence of variations in the shape, size, and spacing of the unit figure (UF) on the MRR. The results revealed that maintaining the DCA constant while altering the UF shape to extend the DCL led to a 203% increase in the MRR. Furthermore, modifications in the UF size enhanced the MRR by approximately 630%. The relationship between the DCL and MRR was dependent on the DCA. The characteristics of the SSP, particularly the concentrated pressure and involvement of slurry particles at the edges of the contact area, indicated that an increase in the DCL could augment the active slurry particles. This study offers valuable insights into the pad figure structure, simultaneously advancing our understanding of the pad surface topography and its influence on material removal. By focusing on both structural engineering and practical applications, this study paves the way for future research and enables further exploration in this field.

Published
2024
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47. Development of an Abrasive Embedded Pad for Dishing Reduction and Uniformity Enhancement

Author

Kim Hyoungjae, Kim Ho-Youn, and Jeong Haedo

Subjects
Interconnection, Materials science, Semiconductor device fabrication, Chemical-mechanical planarization, Abrasive, General Physics and Astronomy, Polishing, Wafer, Composite material, Hardness, Isotropic etching
Abstract

Chemical mechanical polishing (CMP) has been widely accepted for the planarization of multilayer structures in semiconductor manufacturing. CMP is optimized by several process parameters, such as the equipment, pad, and slurry. However, there have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Especially, dishing & erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been introduced: minimizing the abrasive concentration, minimizing the oxidizer volume, increasing the surface hardness of the pad, optimization of the pattern structure as dummy patterns. However, minimizing the oxidizer and increasing the pad hardness are concerned with the removal rate and the quality of the polished wafer. Therefore, minimizing the abrasive concentration by using CeO2 is the best solution for reducing dishing & erosion. The removal rate can be maintained because a CeO2 abrasive has good polishing characteristics compared with SiO2. This paper introduces a dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP. Dishing & erosion are initially generated by an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. The developed semi-rigid abrasive pad was applied to Interlayer dielectric (ILD) CMP, and the result was compared with that of a conventional pad in terms of material removal rate, within wafer non-uniformity, and surface damage.

Published
2000

49. Effect of Ceria Abrasives on Planarization Efficiency in STI CMP Process

Author

Park, Boumyoung, Kim, Youngjin, Kim, Hyoungjae, Jeong, Haedo, and Dornfeld, David

Abstract

The strong Ce-O-Si bonding between CeO2 abrasives and SiO2 film surface; i.e., the chemical tooth effect, improved planarization efficiency in CMP using ceria-based slurry as a result of nonlinear behavior of the removal rate. Removal rate is a power function of pressure and relative velocity (i.e., RR=kpavb). In particular, the high dependency of removal rate on pressure when a>1 results in a much higher material removal rate in the upper pattern than in the lower pattern. Therefore, the planarization efficiency of ceria-based slurry is better, from initial polishing time to the completion of the polishing step, than that of conventional silica-based slurry with an exponent value of a=1.

Published
2009

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