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In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate., Comment: 29 pages, 7 figures

We have conducted pulsed transport measurements on c-axis oriented magnesium diboride films over the entire relevant ranges of magnetic field $0 \alt H \alt H_{c2}$ (where \hcu is the upper critical field) and current density $0 \alt j \alt j_{d}$ (where $j_{d}$ is the depairing current density). The intrinsic disorder of the films combined with the large coherence length and three-dimensionality, compared to cuprate superconductors, results in a six-fold enhancement of $H_{c2}$ and raises the depinning current density $j_{c}$ to within an order of magnitude of $j_{d}$. The current-voltage response is highly non-linear at all fields, resulting from a combination of depinning and pair-breaking, and has no trace of an Ohmic free-flux-flow regime. Keywords: pair, breaking, depairing, superconductor, superconductivity, flux, fluxon, vortex, mgb2

We synthesized hexagonal-disc-shaped MgB2 single crystals under high-pressure conditions and analyzed the microstructure and pinning properties. The lattice constants and the Laue pattern of the crystals from X-ray micro-diffraction showed the crystal symmetry of MgB2. A thorough crystallographic mapping within a single crystal showed that the edge and c-axis of hexagonal-disc shape exactly matched the (10-10) and the (0001) directions of the MgB2 phase. Thus, these well-shaped single crystals may be the best candidates for studying the direction dependences of the physical properties. The magnetization curve and the magnetic hysteresis for these single crystals showed the existence of a wide reversible region and weak pinning properties, which supported our single crystals being very clean., Comment: 5 pages, 3 figures. submitted to Phys. Rev. B

The mixed-state Hall resistivity and the longitudinal resistivity in superconducting MgB2 thin films have been investigated as a function of the magnetic field over a wide range of current densities from 100 to 10000 A/cm^2. We observe a universal Hall scaling behavior with a constant exponent of 2.0, which is independent of the magnetic field, the temperature, and the current density. This result can be interpreted well within the context of recent theories., Comment: 4 pages

In high-quality c-axis-oriented MgB2 thin films, we observed high critical current densities (Jc) of 16 MA/cm^2 at 15 K under self fields comparable to those of cuprate high-temperature superconductors. The extrapolated value of Jc at 5 K was estimated to be 40 MA/cm^2. For a magnetic field of 5 T, a Jc of 0.1 MA/cm^2 was detected at 15 K, suggesting that this compound would be a very promising candidate for practical applications at high temperature and lower power consumption. The vortex-glass phase is considered to be a possible explanation for the observed high current-carrying capability., Comment: 3 pages and 4 figures, to be published in Physical Review Letters

We report measurements of the transport and the magnetic properties of high-quality, sub-millimeter-sized MgB2 single crystals with clear hexagonal-plate shapes. The low-field magnetization and the magnetic hysteresis curves show the vortex pinning of these crystals to be very weak. The Debye temperature of $\Theta_{D}\sim 1100$ K, obtained from the zero-field resistance curve, suggests that the normal-state transport properties are dominated by electron-phonon interactions. The resistivity ratio between 40 K and 300 K was about 5, and the upper critical field anisotropy ratio was 3 $\pm$ 0.2 at temperatures around 32 K., Comment: 5 pages, 4 figures

We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K and then deviates from that linear T-dependence at higher temperatures. The T^2 dependence of the cotangent of the Hall angle is only observed above 130 K. The mixed-state Hall effect reveals no sign anomaly over a wide range of current densities from 10^2 to 10^4 A/cm^2 and for magnetic fields up to 5 T., Comment: 5 pages including 5 figures

We report fluctuation magnetoconductance in a MgB2 superconductor prepared under a high pressure of 3 GPa. This excess magnetoconductance, $\Delta\sigma(H)$, follows the three-dimensional scaling function for the critical fluctuations proposed by Ullah and Dorsey. This feature is inferred to originate from the isotropic nature of the MgB2 compound., Comment: 3 pages, 2 figures

If the critical current density Jc is very high for a superconductor, then estimating its value from transport measurements is not very easy. In such cases, the value of Jc, called Jcm for magnetic Jc, is usually obtained from the measured magnetic hysteresis loop measurements by using a proper critical state model such as Bean's model (ref. 1). However, for bulk polycrystalline high temperature superconductors, the values of Jcm are much higher than the values, Jct, obtained from the transport measurements. This is due to the fact that the Jct is interrupted by weakly linked grain boundaries. However, for the recently discovered superconductor MgB2 (ref. 2), the grain boundary effect is negligible and these two values seem to coincide. Moreover, Jc increases drastically with decreasing the temperature. Consequently, the critical current densities for bulk wires can be very high, suggesting that numerous applications for the power transport. In this letter, we report the origin of the large current carrying capability of MgB2 based on direct measurements of the current-voltage relation in high magnetic fields. A strong coupling between the grains may be one reason for the absence of the weak link effect. Another reason may be the fact that, instead of a weak pinning mechanism such as thermally activated flux hopping, strong pinning due to a vortex glass phase is found in this material. The vortex phase diagram obtained from transport measurements shows that, in H-T space, a wide region below the Hc2 line is covered by a vortex glass phase., Comment: 3 pages, 4 figures

We report the effect of the sintering temperature on the superconductivity of MgB2 pellets prepared under a high pressure of 3 GPa. The superconducting properties of the non-heated MgB2 in this high pressure were poor. However, as the sintering temperature increased, the superconducting properties were vastly enhanced, which was shown by the narrow transition width for the resistivity and the low-field magnetizations. This shows that heat treatment under high pressure is essential to improve superconducting properties. These changes were found to be closely related to changes in the surface morphology observed using scanning electron microscopy., Comment: 3 Pages including 3 figures

We report the magnetic-field dependence of the irreversible magnetization of the recently discovered binary superconductor MgB$_{2}$. For the temperature region of $T< 0.9T_c$, the contribution of the bulk pinning to the magnetization overwhelms that of the surface pinning. This was evident from the fact that the magnetization curves, $M(H)$, were well described by the critical-state model without considering the surface pinning effect. It was also found that the $M(H)$ curves at various temperatures scaled when the field and the magnetization were normalized by the characteristic scaling factors $H^\ast(T)$ and $M^\ast(T)$, respectively. This feature suggests that the pinning mechanism determining the hysteresis in $M(H)$ is unique below $T=T_c$., Comment: 4pages and 4 figures. Phys. Rev. B (accepted)

The longitudinal resistivity rho_{xx} and Hall coefficient R_H were measured for MgB2 sintered under high pressure. We found that R_H is positive like cuprate high-Tc superconductors, and decreases as the temperature increases for 40 K < T < 300 K. The cotangent of the Hall angle was found to follow a+bT^2 behavior from Tc to 300 K. At T = 100 K, R_H = 4.1 x 10^{-11} m^3/C from which hole carrier density was determined to be 1.5 x 10^{23}/cm^3. This carrier density is 2 - 3 orders of magnitude larger than that of Nb3Sn superconductor and that of optimally doped YBa_2Cu_3O_y., Comment: 4 pages including 3 figures