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The ON-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the resistance model. The technique presented in this paper delivers a direct and simple methodology for the investigation of the temperature dependence of the ON-resistance in the L-FER. The simulated output characteristics of the L-FER are in good agreement with the experimental results. [ABSTRACT FROM AUTHOR]

GaN smart power chip technology has been realized using a GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral devices for mixed-signal functional blocks. In particular, this brief presents the imperative analog functional block-voltage reference generator for smart power applications with wide-temperature-range stability. The circuit is capable of proper functions within a wide temperature range from room temperature up to 250 °C, illustrating the unique advantage of the wide-bandgap GaN in high-temperature operation. The voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky diodes, and the devices were operated in the subthreshold regime to obtain low power consumption. The voltage reference generator achieved an average drift of less than 0.5 mV/°C and can be used as a reference voltage in various biasing and sensing circuits. [ABSTRACT FROM AUTHOR]

In this paper, a zero-bias mixer using a lateral field-effect diode fabricated on standard GaN-on-Si AlGaN/GaN high electron-mobility-transistor wafers is demonstrated. The diode features strong nonlinearity near zero bias, enabled by a threshold-voltage modulation using a fluorine-plasma-treatment technique. The maximum change in conductance was adjusted to ~0 V, leading to optimal conversion loss (CL) of the mixer at zero bias and eliminating the need for any dc supplies. The mixer is characterized from room temperature (RT) to 250 °C. At 2.5 GHz and at RT, the CL and third-order intermodulation intercept point are 12.9 dB and 17.64 dBm, respectively. The operation of the proposed diode is modeled by a physical equivalent circuit, wit the element values extracted from the measured S-parameters. The voltage-biasing dependence of the CL can be explained by a the model. The high-temperature operation of the mixer shows that the proposed mixer can perform well in high-temperature and ultralow-power applications. [ABSTRACT FROM AUTHOR]

The finite-difference time-domain (FDTD) technique was extended to analyze the frequency response of surface acoustic wave (SAW) filters. In this method, the partial derivatives of quasi-static Maxwell's equations and the equation of motion are discretized to centered finite differences. In addition, the perfectly matched layer boundary condition was applied to reduce spurious reflections. Two structures are considered in this paper. First, the model was applied to analyze the influence of the number of electrodes on the frequency response of a SAW filter fabricated on a zinc oxide (ZnO) substrate. Then, the proposed method was further extended to analyze the frequency response of a ZnO/diamond/Si-layered SAW filter. The simulated results are in a good agreement with the existing experimental data, indicating that the FDTD method was an appropriate approach for modeling SAW devices. [ABSTRACT FROM AUTHOR]